ACJT1

ACJT1 JIEJIE | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com ACJT1 Series 1A TRIACs Rev.3.0 DESCRIPTION: ACJT1 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on inductive load and serious electromagnetic interference place. MAIN FEATURES Symbol Value Unit IT(RMS) 1 A VDRM /VRRM 1000 V IGT ≤5 or ≤10 mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage( Tj=25℃) VDRM 1000 V Repetitive peak reverse voltage( Tj=25℃) VRRM 1000 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V RMS on-state current SOT-89/ SOT-223 (TC=70℃) IT(RMS) 1 A TO-92 (TC=57℃) Non repetitive surge peak on-state current ( full cycle, F=50Hz) ITSM 10 A I2t value for fusing ( tp=10ms) I2t 1.12 A2s Rate of rise of on-state current (IG=2×IGT) dIT/dt 50 A/μs Peak gate current IGM 1 A Average gate power dissipation PG(AV) 0.2 W T1(1) G(3) T2(2) SOT-89 SOT-223 TO-92 1 3 2 1 12 23 3

ACJT1 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 5- http://www.jjwdz.com Peak gate power PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit ACJT105 ACJT110 IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 5 10 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.4 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX 15 25 mA Ⅱ 25 35 IH IT=100mA MAX 10 20 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 400 600 V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=1.4A tp=380μs Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 0.5 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-92 60 ℃/W SOT-223 31 SOT-89 44

ACJT1 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 5- http://www.jjwdz.com

ORDERING INFORMATION

IT(RMS):1A 05: IGT1-3≤5mA 10: IGT1-3≤10mA V:SOT-223 U:TO-92 N:SOT-89 JieJie Microelectronics Co.,Ltd Triacs 10:VDRM /VRRM≥1000V PACKAGE MECHANICAL DATA

ACJT1 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 5- http://www.jjwdz.com PACKAGE MECHANICAL DATA K G B Φ Max 1.5mm H A F C N N E P V D J Dimensions Millimeters InchesRef. A B C D E F G H J K N P V 4.45 4.32 3.18 0.407 5.20 5.33 4.19 0.533 0.175 0.170 0.125 0.016 0.205 0.210 0.165 0.021 0.60 0.80 1.1 0.043 - 1.27 - 0.050- - - 2.30 - 0.091- - 0.36 0.50 0.014 0.020 15.012.70 0.500 0.591 2.04 2.66 0.080 0.105 1.86 2.06 0.073 0.081 4.3 0.169- - 0.024 0.031 - - - - TO-92 FIG.3: Surge peak on-state current versus number of cycles FIG.1 Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A) SOT-89/ SOT-223 P(w) 0.5 IT(RMS) (A) Tc (℃)0 1.0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 1.5 0.5 1.0 1.5 2.0 Tj=25℃ 0.5 1.5 Tj=125℃ 1.0 α=180° t=20ms One cycle TO-92

ACJT1 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com FIG.6: Relative variations of holding current, latching curretn versus junction temperature -40 -20 0 20 40 60 80 100 120 140 IH,IL(Tj) /IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tj (℃) FIG.5: Relative variations of gate trigger current versus junction temperature -40 -20 0 20 40 60 80 100 120 140 IGT(Tj) /IGT(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IGT1&IGT2 Tj (℃) IH IL IGT3 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie as sumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 2 2-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.