AAT9055 ANALOGICTECH | Alldatasheet

Document overview

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Technical content

Features

  • V DS(MAX) = 30V
  • I D(MAX) 1 = 12 A @ TC = 25°C
  • I APP(MAX) = 6A in typical computer application
  • Low R DS(ON):
  • 56 m Ω @VGS = 10V
  • 90 m Ω @VGS = 4.5V GS Drain-Connected Tab Absolute Maximum Ratings (TC=25°C unless otherwise noted) Thermal Characteristics Symbol Description Value Units RθJA Maximum Junction-to-Ambient 100 °C/W RTYP Typical Junction to ambient on PC board 2 28 °C/W RθJC Maximum Junction-to-Case 5.5 °C/W Symbol Description Value Units VDS Drain-Source Voltage 30 VVGS Gate-Source Voltage ±20 ID Continuous Drain Current @ TJ=150°C 1 TC = 25°C ±12 TC = 70°C ±10 IDM Pulsed Drain Current 3 ±16 A IS Continuous Source Current (Source-Drain Diode) 1 12 PD Maximum Power Dissipation 1 TC = 25°C 22 WTC = 70°C 14 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C

Electrical Characteristics (TJ=25°C unless otherwise noted) Notes: 1. Based on thermal dissipation from junction to case. R θJC + RθCA = RθJA where the case thermal reference is defined as the solder mounting surface of the drain tab. R θJC is guaranteed by design, however R θCA is determined by the PCB design. Package current is limited to 8A DC and 16A pulsed. 2. Mounted on typical computer main board. 3. Pulse measurement 300 µs. 4. Guaranteed by design. Not subject to production testing. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250µA 30 V RDS(ON) Drain-Source ON-Resistance 3 VGS=10V, ID=12A 44 56 mΩVGS=4.5V, ID=10A 68 90 ID(ON) On-State Drain Current 3 VGS=10V, VDS=5V (Pulsed) 16 A VGS(th) Gate Threshold Voltage V GS=VDS, ID=250µA 1.0 V IGSS Gate-Body Leakage Current V GS=±20V, VDS=0V ±100 nA IDSS Drain Source Leakage Current VGS=0V,VDS=30V 1 µAVGS=0V,VDS=30V, TJ=70°C 25 gfs Forward Transconductance 3 VDS=5V, ID=4A 6 S Dynamic Characteristics 4 QG Total Gate Charge V DS=15V, RD=2.5Ω, VGS=5V 4.2 QGT Total Gate Charge V DS=15V, RD=2.5Ω, VGS=10V 7.7 QGS Gate-Source Charge V DS=15V, RD=2.5Ω, VGS=10V 1.35 nC QGD Gate-Drain Charge V DS=15V, RD=2.5Ω, VGS=10V 1.2 tD(ON) Turn-ON Delay V DD=15V, RD=2.5Ω, VGS=10V, RG=6Ω 2.5 tR Turn-ON Rise Time V DD=15V, RD=2.5Ω, VGS=10V, RG=6Ω 2.6 tD(OFF) Turn-OFF Delay V DD=15V, RD=2.5Ω, VGS=10V, RG=6Ω 12 ns tF Turn-OFF Fall Time V DD=15V, RD=2.5Ω, VGS=10V, RG=6Ω 5.7 Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 3 VGS=0, IS=12A 1.2 1.5 V IS Continuous Diode Current 1 12 A AAT9055 30V N-Channel Power MOSFET 2 9055.2003.04.0.61

Source-Drain Diode Forward Voltage 0.1 100 V IS (A) SD (V) TJ = 25°C TJ = 150°C Gate Charge 02468 1 0 QG, Charge (nC) VGS (V) VD=15V RD=2.5Ω On-Resistance vs. Gate to Source Voltage 100 02468 1 VGS (V) RDS(ON) (mΩ) ID = 10A On-Resistance vs. Drain Current ID (A) RDS(ON) (mΩ) 100 120 048 1 2 1 6 VGS = 4.5V VGS = 10V Transfer Characteristics VGS (V) ID (A) 012345 VD=VG 25°C -55°C 125°C Output Characteristics VDS (V) IDS (A) 01234 3.5V 5V 4.5V 10V AAT9055 30V N-Channel Power MOSFET 9055.2003.04.0.61 3

Ordering Information

Note: Sample stock is generally held on all part numbers listed in BOLD.

Package Information

TO-252 (DPAK) All measurements in millimeters.

2.29 BSC

7.5° ± 7.5° 5.205 ± 0.255 5.775 ± 0.445 1.46 ± 0.57 6.54 ± 0.19

2.67 REF

2.285 ± 0.105 0.83 ± 0.19 0.72 ± 0.17 9.855 ± 0.555 0.50 0.13 Package Marking Part Number (Tape and Reel) TO-252 (DPAK) 9055 AAT9055INY-T1 AAT9055 30V N-Channel Power MOSFET 4 9055.2003.04.0.61 Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech pr oduct. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific tes ting of all parameters of each device is not necessarily performed.