AAT8660B

AAT8660 AAT | Alldatasheet

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Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 o f 2 5 V2.0 AAT8660 Series Product information presented is current as of publication date. Details are subject to change without notice. ONE-CELL LI-ION BATTERY PROTECTION IC F E A T U R E S z Ideal for One-Cell Rechargeable Li-Ion Battery Packs z High Accuracy Voltage Detection z Low Current Consumption: A3μ Supply Current (Typical) A1.0 μ Shutdown Current z 3-Level Over Current Detection: Over-Current Level 1 /Over Current Level 2 / Short Circuit z Wide Operating Temperature Range: C85 to C40 οο +− z Small SOT26 Package PIN CONFIGURATION NULL outD VN outC GND DDV GENERAL DESCRIPTION The AAT8660 series are designed to protect one-cell rechargeable Li-Ion battery pack against over-charge, over-discharge, over-current and short circuit. They use CMOS process to provide high accuracy voltage detection and low current consumption. Each of the AAT8660 devices incorporates voltage comparators, bandgap reference voltage generator, signal delay circuit, short circuit detector, and digital control circuit. In the charge process, when the battery voltage is charged to a value greater than 1CV (Over-Charge Threshold Voltage), the output of outC pin switches to the low level, i.e., the VN pin level. The output of outC pin will switch to high level when the battery voltage falls lower than V C2 (Over-Charge Release Voltage), or when the charger is disconnected from the battery pack and the battery voltage level ranges between V C1 and VC2. During the discharge process, when the battery voltage drops to a value lower than 1DV (Over-Discharge Threshold Voltage), the output of outD pin switches to low level immediately after the internal delay time elapses. The output of outD pin will switch to high level when the battery voltage is at a level higher than 2DV (Over-Discharge Release Voltage).

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 o f 2 5 V2.0 AAT8660 Series Over current level 1 voltage ( 1OCV ) is used to monitor the amount of di scharge current. If the discharge current is high enough to cause VN pin voltage increase to a value greater than 1OCV, t h e output of outD pin will switch to a low level after a delay time 1OCt . If the load is removed from battery pack, the output of outD will change to a high level again. The mechanism of short circuit protection is identical to a discharge current. If the short circuit current is high enough to cause VN pin voltage increase to greater than shortV , the output of outD pin will move to the low level after a delay time shortt , and the output of outD level will change to high when the load is removed from battery pack. BLOCK DIAGRAM: DDV GND VN outD outC

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 3 o f 2 5 V2.0 AAT8660 Series PIN DESCRIPTION PIN NO NAME I/O DESCRIPTION 1 outD O Discharge Control Pin which Connects to External MOSFET Gate

2 VN I Voltage Detection Pin between VN and GND

3 outC O Charge Control Pin which Connects to External MOSFET Gate. 4 NULL ╳ Null Pad.

5 DDV I Power Supply Input Pin

6 GND I Ground

CHARACTERISTICS SYMBOL VALUE UNIT Supply Voltage DDV 3.0− to 8.0 V VN Pin Input Voltage VNV 20VDD − to 3.0VDD + V outD Pin Output Voltage DoutV 3.0− to 3.0VDD + V outC Pin Output Voltage CoutV 3.0VVN − to 3.0VDD + V Power Dissipation dP 150 mW Operating Temperature Range CT 40− to +85 Cο Storage Temperature Range storageT 40− to +125 Cο RECOMMENDED OPERATING CONDITIONS PARAMETER TEST CONDITION MIN MAX UNIT Supply Voltage, DDV Voltage Defined as DDV to GND 1.5 7.0 V outD Output Voltage GND DDV V outC Output Voltage VN DDV V OPERATION VOLTAGE AND OPERATION CURRENT PARAMETER TEST CONDITION MIN TYP MAX UNIT Supply Current at Normal Operation Mode DDV =3.3V; VN=0V; GND=0V 3.0 6.0 Aμ Standby Current at Power Down Mode - - 0.1 Aμ Operation Voltage between DDV and VN 1.5 20.0 V

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 4 o f 2 5 V2.0 AAT8660 Series AAT8660A DETECTION VOLTAGE AND DELAY TIME ( C25ο ) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.275 4.325 4.375 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.35 V C1-0.25 V C1-0.15 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.420 2.500 2.580 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1+0.3 V D1+0.4 V D1+0.5 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 130 150 170 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 500 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp. ⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when V D1＜VDD＜ VD2) 0.2− 3.1− 6.0− V outC High Level Resistance COHR V5.3VDD = ; V0.3Cout = ; V0VN = 1 2 10 Ωk outC Low Level Resistance COLR V5.4VDD = ; V5.0Cout = ; V0VN = 150 602 2,380 Ωk outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ; V0VN = 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; V0VN = 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; V5.3VN = 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 5 o f 2 5 V2.0 AAT8660 Series AAT8660B DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.300 4.350 4.400 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.220 2.300 2.380 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1+0.6 V D1+0.7 V D1+0.8 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 130 150 170 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 500 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 2.8 4.0 5.2 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) 0.2− 3.1− 6.0− V outC High Level Resistance COHR V5.3VDD = ; V0.3COUT = ; V0VN = 1 2 10 Ωk outC Low Level Resistance COLR V5.4VDD = ; V5.0COUT = ; V0VN = 150 602 2,380 Ωk outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ; V0VN = 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; V0VN = 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; V5.3VN = 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 6 o f 2 5 V2.0 AAT8660 Series AAT8660C DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.250 4.300 4.350 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.220 2.300 2.380 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1-0.08 V D1 V D1+0.08 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 80 100 120 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 480 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) 0.2− 3.1− 6.0− V outC High Level Resistance COHR V5.3VDD = ; V0.3Cout = ; V0VN = 1 2 10 Ωk outC Low Level Resistance COLR V5.4VDD = ; V5.0Cout = ; V0VN = 150 602 2,380 Ωk outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ; V0VN = 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; V0VN = 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; V5.3VN = 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 7 o f 2 5 V2.0 AAT8660 Series AAT8660D DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.230 4.280 4.330 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.201 2.281 2.361 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1-0.08 V D1 V D1+0.08 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 110 130 150 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 490 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 μs Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) 0.2− 3.1− 6.0− V outC High Level Resistance COHR V5.3VDD = ; V0.3Cout = ; V0VN = 1 2 10 Ωk outC Low Level Resistance COLR V5.4VDD = ; V5.0Cout = ; V0VN = 150 602 2,380 Ωk outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ; V0VN = 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR V8.1VDD = ; V5.0Dout = ; V8.1VN = 2.5 5.0 10.0 Ωk Internal Resistance between VN and DDV VNDR V8.1VDD = ; VN=0V 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; V5.3VN = 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 8 o f 2 5 V2.0 AAT8660 Series AAT8660E DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.230 4.280 4.330 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.201 2.281 2.361 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1+0.5 V D1+0.6 V D1+0.7 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 80 100 120 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 480 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) -2.0 -1.3 -0.6 V outC High Level Resistance COHR 3.5VVDD = ; V0.3Cout = ; 0VVN = 1 2 10 Ωk outC Low Level Resistance COLR 4.5VVDD = ; V5.0Cout = ; 0VVN = 150 602 2,380 Ωk outD High Level Resistance DOHR 3.5VVDD = ; V0.3Dout = ; 0VVN = 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR 1.8VVDD = ; V5.0Dout = ; 1.8VVN = 2.5 5.0 10.0 Ωk Internal Resistance between VN and DDV VNDR 1.8VVDD = ; 0VVN = 100 300 900 Ωk Internal Resistance between VN and GND VNGR 3.5VVDD = ; 3.5VVN = 10 20 40 k Ω

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 9 o f 2 5 V2.0 AAT8660 Series AAT8660F DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.275 4.325 4.375 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.35 V C1-0.25 V C1-0.15 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.420 2.500 2.580 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1+0.3 V D1+0.4 V D1+0.5 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 80 100 120 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 480 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (When VD1＜VDD＜VD2) 0.2− 3.1− 6.0− V outC High Level Resistance COHR V5.3VDD = ; V0.3Cout = ; V0VN = 1 2 10 Ωk outC Low Level Resistance COLR V5.4VDD = ; V5.0Cout = ; V0VN = 150 602 2,380 Ωk outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ;VN=0V 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; V0VN = 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; VN=3.5V 10 20 40 k Ω

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 0 o f 2 5 V2.0 AAT8660 Series AAT8660G DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.300 4.350 4.400 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.220 2.300 2.380 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1+0.6 V D1+0.7 V D1+0.8 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 180 200 220 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 510 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 2.8 4 5.2 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage(when V D1＜VDD＜ VD2) 0.2− 3.1− 6.0− V outC High Resistance Level COHR V5.3VDD = ; V0.3Cout = ;VN=0V 1 2 10 Ωk outC Low Resistance Level COLR V5.4VDD = ; V5.0Cout = ;VN=0V 150 602 2,380 Ωk outD High Resistance Level DOHR V5.3VDD = ; V0.3Dout = ;VN=0V 2.5 5.0 10.0 Ωk outD Low Resistance Level DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; VN=0V 100 300 900 Ωk Internal Resistance between VN and GND VNGR 3.5VVDD = ; VN=3.5V 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 1 o f 2 5 V2.0 AAT8660 Series AAT8660H DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.250 4.300 4.350 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.220 2.300 2.380 V Over Discharge Release Voltage 2DV Detect rising Edge of Supply Voltage V D1-0.08 V D1 V D1+0.08 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 130 150 170 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 500 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) -2.0 -1.3 -0.6 V outC High Resistance Level COHR V5.3VDD = ; V0.3Cout = ;VN=0V 1 2 10 Ωk outC Low Resistance Level COLR V5.4VDD = ; V5.0Cout = ;VN=0V 150 602 2,380 Ωk outD High Resistance Level DOHR V5.3VDD = ; V0.3Dout = ;VN=0V 2.5 5.0 10.0 Ωk outD Low Resistance Level DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; VN=0V 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; VN=3.5V 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 2 o f 2 5 V2.0 AAT8660 Series AAT8660I DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.250 4.300 4.350 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.220 2.300 2.380 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1-0.08 V D1 V D1+0.08 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 110 130 150 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 490 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) 0.2− 3.1− 6.0− V outC High Resistance Level COHR V5.3VDD = ; 3.0VCout = ;VN=0V 1 2 10 Ωk outC Low Resistance Level COLR V5.4VDD = ; V5.0Cout = ;VN=0V 150 602 2,380 Ωk outD High Resistance Level DOHR V5.3VDD = ; V0.3Dout = ;VN=0V 2.5 5.0 10.0 Ωk outD Low Resistance Level DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; VN=0V 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; VN=3.5V 10 20 40 k Ω

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 3 o f 2 5 V2.0 AAT8660 Series AAT8660J DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.230 4.280 4.330 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.30 V C1-0.20 V C1-0.10 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.201 2.281 2.361 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1-0.08 V D1 V D1+0.08 V Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 180 200 220 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 510 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − 3.1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 sμ Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜ VD2) -2.0 -1.3 -0.6 V outC High Level Resistance COHR V5.3VDD = ; V0.3Cout = ;VN=0V 1 2 10 Ωk outC Low Level Resistance COLR V5.4VDD = ; V5.0Cout = ;VN=0V 150 602 2,380 Ωk outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ;VN=0V 2.5 5.0 10.0 Ωk outD Low Level Resistance DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; VN=0V 100 300 900 Ωk Internal Resistance between VN and GND VNGR V5.3VDD = ; VN=3.5V 10 20 40 Ωk

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 4 o f 2 5 V2.0 AAT8660 Series AAT8660K DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Over Charge Threshold Voltage 1CV Detect Rising Edge of Supply Voltage 4.20 4.25 4.30 V Over Charge Release Voltage 2CV Detect Falling Edge of Supply Voltage V C1-0.3 V C1-0.2 V C1-0.1 V Over Discharge Threshold Voltage 1DV Detect Falling Edge of Supply Voltage 2.201 2.281 2.361 V Over Discharge Release Voltage 2DV Detect Rising Edge of Supply Voltage V D1+0.5 V D1+0. VD1+0.7 V Over Discharge Delay Time 1Dt V6.3VDD = to 2.2V 87.5 125 162.5 ms Over Current Level 1 Detection Voltage 1OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC1 Delay Time) 80 100 120 mV Over Current Level 2 Detection Voltage 2OCV Detect Rising Edge of “VN” Pin Voltage ( outD Response with tOC2 Delay Time) 400 480 600 mV Short Circuit Detection Voltage shortV V0.3VDD = , Detect Rising Edge of “VN” Pin Voltage ( outD Response with shortt Delay Time) 7.1VDD − .1VDD − 9.0VDD − V Over Current Level 1 Detection Delay Time 1OCt V0.3VDD = 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time 2OCt Room Temp.⇒ Low or High Temp. ⇒ V0.3VDD = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time shortt V0.3VDD = 10 50 μs Charger Detection Voltage CHRV Detect Rising Edge of “ outD ” Pin Voltage (when VD1＜VDD＜VD2) -2.0 -1.3 -0.6 V outC High Level Resistance COHR V5.3VDD = ; V0.3Cout = ;VN=0V 1 2 10 k Ω outC Low Level Resistance COLR V5.4VDD = ; V5.0Cout = ;VN=0V 150 602 2380 k Ω outD High Level Resistance DOHR V5.3VDD = ; V0.3Dout = ;VN=0V 2.5 5.0 10.0 k Ω outD Low Level Resistance DOLR V8.1VDD = ; Internal Resistance between VN and DDV VNDR V8.1VDD = ; VN=0V 100 300 900 k Ω Internal Resistance between VN and GND VNGR V5.3VDD = ; VN=3.5V 10 20 40 k Ω

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 5 o f 2 5 V2.0 AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME ( C25ο ) PARAMETER SYMBOL DEVICE MIN TYP MAX UNIT VC1 AAT8660A 4.275 4.325 4.375 V AAT8660B 4.30 4.35 4.40 V AAT8660C 4.25 4.3 4.35 V AAT8660D 4.23 4.28 4.33 V AAT8660E 4.23 4.28 4.33 V AAT8660F 4.275 4.325 4.375 V AAT8660G 4.3 4.35 4.4 V AAT8660H 4.25 4.3 4.35 V AAT8660I 4.25 4.3 4.35 V AAT8660J 4.23 4.28 4.33 V Over Charge Threshold Voltage AAT8660K 4.20 4.25 4.30 V VC2 AAT8660A V C1-0.35 V C1-0.25 V C1-0.15 V AAT8660B V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660C V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660D V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660E V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660F V C1-0.35 V C1-0.25 V C1-0.15 V AAT8660G V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660H V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660I V C1-0.3 V C1-0.2 V C1-0.1 V AAT8660J V C1-0.3 V C1-0.2 V C1-0.1 V Over Charge Release Voltage AAT8660K V C1-0.3 V C1-0.2 V C1-0.1 V VD1 AAT8660A 2.420 2.5 2.580 V AAT8660B 2.220 2.3 2.380 V AAT8660C 2.220 2.3 2.380 V AAT8660D 2.201 2.281 2.361 V AAT8660E 2.201 2.281 2.361 V AAT8660F 2.420 2.5 2.580 V AAT8660G 2.220 2.3 2.380 V AAT8660H 2.220 2.3 2.380 V AAT8660I 2.220 2.3 2.380 V AAT8660J 2.201 2.281 2.361 V Over Discharge Threshold Voltage AAT8660K 2.201 2.281 2.361 V

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 6 o f 2 5 V2.0 AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL DEVICE MIN TYP MAX UNIT VD2 AAT8660A VD1+0.3 V D1+0.4 V D1+0.5 V AAT8660B V D1+0.6 V D1+0.7 V D1+0.8 V AAT8660C V D1-0.08 V D1 V D1+0.08 V AAT8660D V D1-0.08 V D1 V D1+0.08 V AAT8660E V D1+0.5 V D1+0.6 V D1+0.7 V AAT8660F VD1+0.3 V D1+0.4 V D1+0.5 V AAT8660G V D1+0.6 V D1+0.7 V D1+0.8 V AAT8660H V D1-0.08 V D1 V D1+0.08 V AAT8660I V D1-0.08 V D1 V D1+0.08 V AAT8660J V D1-0.08 V D1 V D1+0.08 V Over Discharge Release Voltage AAT8660K V D1+0.5 V D1+0.6 V D1+0.7 V tC1 AAT8660A 0.700 1 1.300 s AAT8660B 0.088 0.125 0.163 s AAT8660C 0.700 1 1.300 s AAT8660D 0.700 1 1.300 s AAT8660E 0.700 1 1.300 s AAT8660F 0.700 1 1.300 s AAT8660G 0.088 0.125 0.163 s AAT8660H 0.700 1 1.300 s AAT8660I 0.700 1 1.300 s AAT8660J 0.700 1 1.300 s Over Charge Delay Time AAT8660K 0.700 1 1.300 s tD1 AAT8660A 87.5 125 162.5 ms AAT8660B 22.4 32 41.6 ms AAT8660C 87.5 125 162.5 ms AAT8660D 87.5 125 162.5 ms AAT8660E 87.5 125 162.5 ms AAT8660F 87.5 125 162.5 ms AAT8660G 22.4 32 41.6 ms AAT8660H 87.5 125 162.5 ms AAT8660I 87.5 125 162.5 ms AAT8660J 87.5 125 162.5 ms Over Discharge Delay Time AAT8660K 87.5 125 162.5 ms

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 7 o f 2 5 V2.0 AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL DEVICE MIN TYP MAX UNIT VOC1 AAT8660A 130 150 170 mV AAT8660B 130 150 170 mV AAT8660C 80 100 120 mV AAT8660D 110 130 150 mV AAT8660E 80 100 120 mV AAT8660F 80 100 120 mV AAT8660G 180 200 220 mV AAT8660H 130 150 170 mV AAT8660I 110 130 150 mV AAT8660J 180 200 220 mV Over Current Level 1 Detection Voltage AAT8660K 80 100 120 mV VOC2 AAT8660A 400 500 600 mV AAT8660B 400 500 600 mV AAT8660C 400 480 600 mV AAT8660D 400 490 600 mV AAT8660E 400 480 600 mV AAT8660F 400 480 600 mV AAT8660G 400 510 600 mV AAT8660H 400 500 600 mV AAT8660I 400 490 600 mV AAT8660J 400 510 600 mV Over Current Level 2 Detection Voltage AAT8660K 400 480 600 mV tOC1 AAT8660A 5.6 8 10.4 ms AAT8660B 2.8 4 5.2 ms AAT8660C 5.6 8 10.4 ms AAT8660D 5.6 8 10.4 ms AAT8660E 5.6 8 10.4 ms AAT8660F 5.6 8 10.4 ms AAT8660G 2.8 4 5.2 ms AAT8660H 5.6 8 10.4 ms AAT8660I 5.6 8 10.4 ms AAT8660J 5.6 8 10.4 ms Over Current Level 1 Detection Delay Time AAT8660K 5.6 8 10.4 ms

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 8 o f 2 5 V2.0 AAT8660 Series TIMING CHART AAT8660 (CHARGE AND DISCHARGE) CHRV D1V D2V C2V C1V DDV DDV VN DDV 1Ct 1Dt outC outD 1Ct 1Dt DDV GND GND

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 1 9 o f 2 5 V2.0 AAT8660 Series TIMING CHART AAT8660 (UNUSUAL CHARGE CURRENT, OVER CURRENT, SHORT CIRCUIT) DDV DDV outC outD shortt 1OCt 1OCt 2OCt 2OCt 1Ct DDV DDV DDV shortV 1CV 2CV 2DV 1DV 2OCV 1OCV CHRV Time

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 0 o f 2 5 V2.0 AAT8660 Series TYPICAL APPLICATION Li Battery GND VN OUTD OUTC F1.0 μ Ω100 Ωk1 DDV

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 1 o f 2 5 V2.0 AAT8660 Series PACKAGE DIMENSION

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 2 o f 2 5 V2.0 AAT8660 Series PACKAGE DIMENSIONS (CONT.) VARIATION (ALL DIMENSIONS SHOWN IN MILLIMETERS) SYMBOL MIN TYP MAX A2 0.90 1.15 1.30 D 2.90 BSC E 2.80 BSC E1 1.60 BSC e 0.95 BSC e1 1.90 BSC L 0.30 0.45 0.60 L1 0.60 REF L2 0.25 BSC θ ο0 ο4 ο8 1θ ο5 ο10 ο15 NOTE:

1 JEDEC OUTLINE: MO-178 AB

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 3 o f 2 5 V2.0 AAT8660 Series TAPE AND REEL PACKING METHOD: 3,000PCS/REEL, 5 REELS/BOX

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 4 o f 2 5 V2.0 AAT8660 Series TAPE AND REEL (CONT.) X.XXX X ± 0.0025 X.XXX ± 0.006 X.XX ± 0.025 X.X ± 0 . 1 0 X ± 0.25 UNIT: MILLIMETERS

Advanced Analog Technology, Inc. – 台灣類比科技股份有限公司 – – Advanced Analog Technology, Inc. – P a g e 2 5 o f 2 5 V2.0 AAT8660 Series PART MARKING PREVIOUS SOT26 TOP MARKING AXXX NOTE: SOT26 HAS NO BACK MARKING. CURRENT SOT26 TOP MARKING AXX

ORDERING INFORMATION

Summary

ONE-CELL LI-ION BATTERY PROTECTION IC V2.0

Description

ONE-CELL LI-ION BATTERY PROTECTION IC V2.0

Source title AAT8660B Datasheet(PDF) - Advanced Analog Technology, Inc.

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