AAT8107

AAT8107 ANALOGICTECH | Alldatasheet

Document overview

• Manufacturer or author: janekim
• PDF pages: 6

Technical content

Features

• V DS(MAX) = -20V
• I D(MAX) 1 = -6.5A @ 25°C
• Low R DS(ON):
• 35m Ω @ VGS = -4.5V
• 60m Ω @ VGS = -2.5V DDDD SSSG Top View 1234 8765 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Thermal Characteristics Symbol Description Value Units RθJA Typical Junction-to-Ambient Steady State1 80 RθJA2 Maximum Junction-to-Ambient t<10 Seconds1 50 °C/W RθJF Typical Junction-to-Foot1 27 Symbol Description Value Units VDS Drain-Source Voltage -20 VVGS Gate-Source Voltage ±12 ID Continuous Drain Current @ TJ=150°C1 TA = 25°C ±6.5 TA = 70°C ±5.2 AIDM Pulsed Drain Current2 ±32 IS Continuous Source Current (Source-Drain Diode)1 -1.7 PD Maximum Power Dissipation1 TA = 25°C 2.5 WTA = 70°C 1.6 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pul se on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R θJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. TrenchDMOS™

20V P-Channel Power MOSFET 2 8107.2005.05.1.1

Electrical Characteristics

TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown V GS = 0V, ID = -250µA -20 V Voltage RDS(ON) Drain-Source On-Resistance1 VGS = -4.5V, ID = -6.5A 27 35 mΩVGS = -2.5V, ID = -5.0A 46 60 ID(ON) On-State Drain Current1 VGS = -4.5V, VDS = 5V (Pulsed) -32 A VGS(th) Gate Threshold Voltage V GS = VDS, ID = -250µA -0.6 V IGSS Gate-Body Leakage Current V GS = ±12V, VDS = 0V ±100 nA IDSS Drain Source Leakage VGS = 0V, VDS = -20V -1 µACurrent VGS = 0V, VDS = -16V, TJ = 70°C -5 gfs Forward Transconductance1 VDS = -5V, ID = -6.5A 12 S Dynamic Characteristics2 QG Total Gate Charge V DS = -15V, RD = 2.3Ω, VGS = -4.5V 13.6 QGS Gate-Source Charge V DS = -15V, RD = 2.3Ω, VGS = -4.5V 2.3 nC QGD Gate-Drain Charge V DS = -15V, RD = 2.3Ω, VGS = -4.5V 5.5 tD(ON) Turn-On Delay V DS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω 10 tR Turn-On Rise Time V DS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω 35 nstD(OFF) Turn-Off Delay V DS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω 38 tF Turn-Off Fall Time V DS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω 50 Source-Drain Diode Characteristics VSD Source-Drain Forward V GS = 0, IS = -6.5A -1.5 V Voltage1 IS Continuous Diode Current3 -1.7 A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pul se on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R θJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.

TJ = 25ºC, unless otherwise noted. Threshold Voltage -0.3 -0.2 -0.1 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 TJ (°C) VGS(th) Variance (V) ID = 250µA On-Resistance vs. Junction Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ (°C) Normalized RDS(ON) VGS = 4.5V ID = 6.5A On-Resistance vs. Gate-to-Source Voltage 100 120 01 2345 VGS (V) RDS(ON) (mΩ) ID = 6.5A On-Resistance vs. Drain Current 02468 1 0 1 2 ID (A) RDS(ON) (mΩ) VGS = 2.5V VGS = 4.5V Transfer Characteristics 01 2345 VGS (V) ID (A) VD = VG 125°C 25°C -55°C Output Characteristics 01 2 34 VDS (V) IDS (A) 1.5V 3.5V 2.5V 4.5V AAT8107 20V P-Channel Power MOSFET 8107.2005.05.1.1 3

20V P-Channel Power MOSFET 4 8107.2005.05.1.1 Typical Characteristics TJ = 25ºC, unless otherwise noted. Transient Thermal Response, Junction to Ambient 0.01 0.1 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 Time (s) Normalized Effective Transient Thermal Impedance Single Pulse 0.02 0.05 0.1 0.2 0.5 Single Pulse Power, Junction to Ambient 0.001 0.01 0.1 1 10 100 Time (s) Power (W) Capacitance 400 800 1200 1600 2000 0 5 10 15 20 VDS (V) Capacitance (pF) Ciss Coss Crss Source-Drain Diode Forward Voltage 0.1 100 VSD (V) IS (A) TJ = 150°C TJ = 25°C Gate Charge 0369 1 2 1 5 QG, Charge (nC) VGS (V) VD = 15V ID = 6.5A

Ordering Information

Package Information

All dimensions in millimeters. 0.175 ± 0.075 6.00 ± 0.20 1.27 BSC0.42 ± 0.09 × 8 4.90 ± 0.10 4° ± 4° 45°0.375 ± 0.125 0.235 ± 0.045 0.825 ± 0.445 Package Marking Part Number (Tape and Reel) 1 SOP-8 8107 AAT8107IAS-T1 AAT8107 20V P-Channel Power MOSFET 8107.2005.05.1.1 5 1. Sample stock is generally held on all part numbers listed in BOLD.

20V P-Channel Power MOSFET 6 8107.2005.05.1.1 Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech pr oduct. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific tes ting of all parameters of each device is not necessarily performed.