AAT7551

AAT7551 ANALOGICTECH | Alldatasheet

Document overview

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Technical content

Features

• Drain-Source Voltage (max): -20V
• Continuous Drain Current 1 (max): -2.7A @ 25°C
• Low On-Resistance: — 100m Ω @ VGS = -4.5V — 175m Ω @ VGS = -2.5V Dual SC70JW-8 Package D1 D1 D2 D2 S1 G1 S2 G2 Top View 1234 8765 AAT7551 20V P-Channel Power MOSFET Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Thermal Characteristics1 Symbol Description Typ Max Units RθJA Junction-to-Ambient Steady State 132 165 RθJA2 Junction-to-Ambient t<5 Seconds 83 104 °C/W RθJF Junction-to-Foot 60 72 PD Maximum Power Dissipation TA = 25°C 1.2 WTA = 70°C 0.75 Symbol Description Value Units VDS Drain-Source Voltage -20 VVGS Gate-Source Voltage ±12 ID Continuous Drain Current @ TJ = 150°C1 TA = 25°C ±2.7 TA = 70°C ±2.2 AIDM Pulsed Drain Current2 ±8 IS Continuous Source Current (Source-Drain Diode)1 -0.6 TJ Operating Junction Temperature Range -55 to 150 °C TSTG Storage Temperature Range -55 to 150 °C 7551.2005.04.1.0 1 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second puls e on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R θJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs.

Electrical Characteristics

TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown V GS = 0V, ID = -250µA -20 V Voltage RDS(ON) Drain-Source On-Resistance1 VGS = -4.5V, ID = -2.7A 80 100 mΩVGS = -2.5V, ID = -2.0A 140 175 ID(ON) On-State Drain Current1 VGS = -4.5V, VDS = -5V (pulsed) -8 A VGS(th) Gate Threshold Voltage V GS = VDS, ID = -250µA -0.6 V IGSS Gate-Body Leakage Current V GS = ±12V, VDS = 0V ±100 nA IDSS Drain Source Leakage Current VGS = 0V, VDS = -20V -1 µAVGS = 0V, VDS = -16V, TJ = 70°C2 -5 gfs Forward Transconductance1 VDS = -5V, ID = -2.7A 4 S Dynamic Characteristics2 QG Total Gate Charge V DS = -10V, RD = 3.7Ω, VGS = -4.5V 5.9 QGS Gate-Source Charge V DS = -10V, RD = 3.7Ω, VGS = -4.5V 1 nC QGD Gate-Drain Charge V DS = -10V, RD = 3.7Ω, VGS = -4.5V 2 tD(ON) Turn-On Delay V DS = -10V, RD = 3.7Ω, VGS = -4.5V, RG = 6Ω 22 tR Turn-On Rise Time V DS = -10V, RD = 3.7Ω, VGS = -4.5V, RG = 6Ω 10 nstD(OFF) Turn-Off Delay V DS = -10V, RD = 3.7Ω, VGS = -4.5V, RG = 6Ω 20 tF Turn-Off Fall Time V DS = -10V, RD = 3.7Ω, VGS = -4.5V, RG = 6Ω 40 Source-Drain Diode Characteristics VSD Source-Drain Forward V GS = 0, IS = -2.7A -1.3 V Voltage1 IS Continuous Diode Current3 -0.6 A AAT7551 20V P-Channel Power MOSFET 2 7551.2005.04.1.0 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second puls e on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R θJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.

TJ = 25ºC, unless otherwise noted. Threshold Voltage TJ (°C) VGS(th) Variance (V) -0.3 -0.2 -0.1 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250µA On-Resistance vs. Junction Temperature TJ (°C) Normalized RDS(ON) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 VGS = 4.5V ID = 2.7A On-Resistance vs. Gate-to-Source Voltage VGS (V) RDS(ON) (Ω) ID = 2.7A 0.1 0.2 0.3 0.4 012345 On-Resistance vs. Drain Current ID (A) RDS(ON) (Ω) 0.05 0.1 0.15 0.2 0.25 0.3 02468 VGS = 2.5 V VGS = 4.5 V Transfer Characteristics VGS (V) ID (A) VD=VG 012345 -55°C 125°C 25°C Output Characteristics VDS (V) IDS (A) 1.5V 4.5V 2.5V 0 0.5 1 1.5 2 2.5 3 3.5V AAT7551 20V P-Channel Power MOSFET 7551.2005.04.1.0 3

TJ = 25ºC, unless otherwise noted. Transient Thermal Response, Junction to Ambient Time (s) Normalized Effective Transient Thermal Impedance0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 .01 .02 Single Pulse Single Pulse Power, Junction to Ambient Time (s) Power (W) 0.0001 0.001 0.01 0.1 1 10 100 1000 Capacitance VDS (V) Capacitance (pF) Ciss 200 400 600 0 5 10 15 20 Crss Coss Source-Drain Diode Forward Voltage VSD (V) IS (A) 0.1 100 TJ = 150°C TJ = 25°C Gate Charge QG, Charge (nC) VGS (V) 01 23 4 56 VD = 10V ID = 2.7A AAT7551 20V P-Channel Power MOSFET 4 7551.2005.04.1.0

20V P-Channel Power MOSFET 7551.2005.04.1.0 5

Ordering Information

Package Information

All dimensions in millimeters. 0.225 ± 0.075 0.45 ± 0.10 0.05 ± 0.05 2.10 ± 0.30 2.00 ± 0.20 7° ± 3° 4° ± 4° 0.15 ± 0.05

1.10 MAX

0.100 2.20 ± 0.20 0.048REF 0.50 BSC 0.50 BSC 0.50 BSC Package Marking 1 Part Number (Tape and Reel)2 SC70JW-8 KDXYY AAT7551IJS-T1 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD.

20V P-Channel Power MOSFET 6 7551.2005.04.1.0 Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech pr oduct. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific tes ting of all parameters of each device is not necessarily performed.