AAT7357 ANALOGICTECH | Alldatasheet

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Technical content

Features

  • V DS(MAX) = -20V
  • I D(MAX) 1 = -5A @ 25°C
  • Low R DS(ON):
  • 39 m Ω @ VGS = -4.5V
  • 63 m Ω @ VGS = -2.5V Dual TSOPJW-8 Package D1 D1 D2 D2 S1 G1 S2 G2 Top View 1234 8765 AAT7357 20V P-Channel Power MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Thermal Characteristics Symbol Description Typ Max Units RθJA Junction-to-Ambient steady state, one FET on 1 115 140 °C/W RθJA2 Junction-to-Ambient t<5 seconds 1 64 78 °C/W RθJF Junction-to-Foot 1 60 72 °C/W Symbol Description Value Units VDS Drain-Source Voltage -20 VVGS Gate-Source Voltage ±12 ID Continuous Drain Current @ TJ=150°C 1 TA = 25°C ±5 TA = 70°C ±4 AIDM Pulsed Drain Current 2 ±12 IS Continuous Source Current (Source-Drain Diode) 1 -1.3 PD Maximum Power Dissipation 1 TA = 25°C 1.6 WTA = 70°C 1.0 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C Advanced Information 7357.2003.08.0.6 1

Electrical Characteristics (TJ=25°C unless otherwise noted) Notes: 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second puls e on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R θJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300 µs 3. Guaranteed by design. Not subject to production testing. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250µA -20 V RDS(ON) Drain-Source ON-Resistance 2 VGS=-4.5V, ID=-5A 30 39 mΩVGS=-2.5V, ID=-4A 49 63 ID(ON) On-State Drain Current 2 VGS=-4.5V, VDS=-5V (Pulsed) -12 A VGS(th) Gate Threshold Voltage V GS=VDS, ID=-250µA -0.6 V IGSS Gate-Body Leakage Current V GS=±12V, VDS=0V ±100 nA IDSS Drain Source Leakage Current VGS=0V, VDS=-20V -1 µAVGS=0V, VDS=-16V, TJ=70°C 3 -5 gfs Forward Transconductance 2 VDS=-5V, ID=-5A 12 S Dynamic Characteristics 3 QG Total Gate Charge V DS=-10V, RD=2.0Ω, VGS=-4.5V 14 QGS Gate-Source Charge V DS=-10V, RD=2.0Ω, VGS=-4.5V 3.5 nC QGD Gate-Drain Charge V DS=-10V, RD=2.0Ω, VGS=-4.5V 5.6 tD(ON) Turn-ON Delay V DS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω TBD tR Turn-ON Rise Time V DS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω TBD nstD(OFF) Turn-OFF Delay V DS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω TBD tF Turn-OFF Fall Time V DS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω TBD Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=-5A -1.2 V IS Continuous Diode Current 1 -1.3 A AAT7357 20V P-Channel Power MOSFET 2 7357.2003.08.0.6

(TJ = 25ºC unless otherwise noted) Threshold Voltage TJ (°C) VGS(th) Variance (V) -0.3 -0.2 -0.1 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 ID = 250µA On-Resistance vs. Junction Temperature TJ (°C) Normalized RDS(ON) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS = 4.5V ID = 4.5A On-Resistance vs. Gate to Source Voltage VGS (V) RDS(ON) (mΩ) 0.02 0.04 0.06 0.08 0123456789 1 0 On-Resistance vs. Drain Current ID (A) RDS(ON) (Ω) 0.02 0.04 0.06 0.08 0 5 10 15 20 VGS = 2.5 V VGS = 4.5 V Transfer Characteristics VGS (V) ID (A) 0 1 2 3 4 VD = VG 25°C -55°C 125°C Output Characteristics VDS (V) IDS (A) 1.5V 2.5V 3.5V 0 0.5 1 1.5 2 4V through 10V AAT7357 20V P-Channel Power MOSFET 7357.2003.08.0.6 3

(TJ = 25ºC unless otherwise noted) Transient Thermal Response, Junction to Ambient Time (s) Normalized Effective Transient Thermal Impedance0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Single Pulse .01 .02 Single Pulse Power, Junction to Ambient Time (s) Power (W) Source-Drain Diode Forward Voltage VSD (V) IS (A) 0.1 100 TJ = 150°C TJ = 25°C AAT7357 20V P-Channel Power MOSFET 4 7357.2003.08.0.6

Ordering Information

Package Information

All dimensions in millimeters. 0.65 BSC 0.65 BSC 0.65 BSC 0.325 ± 0.075 2.85 ± 0.20 2.40 ± 0.10 3.025 ± 0.075 0.055 ± 0.045 0.9625 ± 0.0375 1.0175 ± 0.0925 0.010 0.15 ± 0.05

0.04 REF

0.45 ± 0.15 2.75 ± 0.25 Package Marking Part Number (Tape and Reel) TSOPJW-8 AAT7357ITS-T1 AAT7357 20V P-Channel Power MOSFET 7357.2003.08.0.6 5

20V P-Channel Power MOSFET 6 7357.2003.08.0.6 Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech pr oduct. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific tes ting of all parameters of each device is not necessarily performed.