AAT7357 AAT | Alldatasheet

Document overview

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Technical content

Features

  • Drain-Source Voltage (max): -20V
  • Contiunous Drain Current 1 (max) = -5A @ 25°C
  • Low On-Resistance: — 39m Ω @ VGS = -4.5V — 63m Ω @ VGS = -2.5V Dual TSOPJW-8 Package D1 D1 D2 D2 S1 G1 S2 G2 Top View 1234 8765 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Thermal Characteristics1 Symbol Description Typ Max Units RθJA Junction-to-Ambient Steady State, One FET On 115 140 °C/W RθJA2 Junction-to-Ambient t<5 Seconds 64 78 °C/W RθJF Junction-to-Foot 60 72 °C/W Symbol Description Value Units VDS Drain-Source Voltage -20 VVGS Gate-Source Voltage ±12 ID Continuous Drain Current @ TJ = 150°C1 TA = 25°C ±5 TA = 70°C ±4 AIDM Pulsed Drain Current2 ±12 IS Continuous Source Current (Source-Drain Diode)1 -1.3 PD Maximum Power Dissipation1 TA = 25°C 1.6 WTA = 70°C 1.0 TJ Operating Junction Temperature Range -55 to 150 °C TSTG Storage Temperature Range -55 to 150 °C 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs.

20V P-Channel Power MOSFET 2 7357.2005.04.1.0

Electrical Characteristics

TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0V, ID = -250µA -20 V RDS(ON) Drain-Source On-Resistance1 VGS = -4.5V, ID = -5A 30 39 mΩVGS = -2.5V, ID = -4A 49 63 ID(ON) On-State Drain Current1 VGS = -4.5V, VDS = -5V (pulsed) -12 A VGS(th) Gate Threshold Voltage V GS = VDS, ID = -250µA -0.6 V IGSS Gate-Body Leakage Current V GS = ±12V, VDS = 0V ±100 nA IDSS Drain-Source Leakage Current VGS = 0V, VDS = -20V -1 µAVGS = 0V, VDS = -16V, TJ = 70°C2 -5 gfs Forward Transconductance1 VDS = -5V, ID = -5A 12 S Dynamic Characteristics2 QG Total Gate Charge V DS = -10V, RD = 2.0Ω, VGS = -4.5V 14 QGS Gate-Source Charge V DS = -10V, RD = 2.0Ω, VGS = -4.5V 3.5 nC QGD Gate-Drain Charge V DS = -10V, RD = 2.0Ω, VGS = -4.5V 5.6 tD(ON) Turn-On Delay V DS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω 12 tR Turn-On Rise Time V DS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω 20 nstD(OFF) Turn-Off Delay V DS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω 33 tF Turn-Off Fall Time V DS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω 40 Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage1 VGS = 0, IS = -5A -1.2 V IS Continuous Diode Current3 -1.3 A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.

20V P-Channel Power MOSFET 7357.2005.04.1.0 3 Typical Characteristics TJ = 25ºC, unless otherwise noted. Threshold Voltage TJ (°C) VGS(th) Variance (V) -0.3 -0.2 -0.1 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 ID = 250µA On-Resistance vs. Junction Temperature TJ (°C) Normalized RDS(ON) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS = 4.5V ID = 4.5A On-Resistance vs. Gate to Source Voltage VGS (V) RDS(ON) (mΩ) 0.02 0.04 0.06 0.08 0123456789 1 0 On-Resistance vs. Drain Current ID (A) RDS(ON) (Ω) 0.02 0.04 0.06 0.08 0 5 10 15 20 VGS = 2.5 V VGS = 4.5 V Transfer Characteristics VGS (V) ID (A) 0 1 2 3 4 VD = VG 25°C -55°C 125°C Output Characteristics VDS (V) IDS (A) 1.5V 2.5V 3.5V 0 0.5 1 1.5 2 4V through 10V

TJ = 25ºC, unless otherwise noted. Transient Thermal Response, Junction to Ambient Time (s) Normalized Effective Transient Thermal Impedance0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Single Pulse .01 .02 Single Pulse Power, Junction to Ambient Time (s) Power (W) Source-Drain Diode Forward Voltage VSD (V) IS (A) 0.1 100 TJ = 150°C TJ = 25°C AAT7357 20V P-Channel Power MOSFET 4 7357.2005.04.1.0

20V P-Channel Power MOSFET 7357.2005.04.1.0 5

Ordering Information

Package Information

All dimensions in millimeters. 0.65 BSC 0.65 BSC 0.65 BSC 0.325 ± 0.075 2.85 ± 0.20 2.40 ± 0.10 3.025 ± 0.075 0.055 ± 0.045 0.9625 ± 0.0375 1.0175 ± 0.0925 0.010 0.15 ± 0.05

0.04 REF

0.45 ± 0.15 2.75 ± 0.25 Package Marking 1 Part Number (Tape and Reel)2 TSOPJW-8 NBXYY AAT7357ITS-T1 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD.

20V P-Channel Power MOSFET 6 7357.2005.04.1.0 Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech pr oduct. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific tes ting of all parameters of each device is not necessarily performed.