AAT7103 ANALOGICTECH | Alldatasheet

Document overview

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Technical content

Features

  • V DS(MAX) = 25V
  • I D(MAX) (1) = 6.8 A @ 25°C
  • Low R DS(ON):
  • 26 m Ω @VGS = 4.5V
  • 41 m Ω @VGS = 2.5V Dual SOP-8 Package D1 D1 D2 D2 S1 G1 S2 G2 Top View 1234 8765 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Thermal Characteristics Symbol Description Value Units RθJA Typical Junction-to-Ambient steady state, one FET on 2 100 °C/W RθJA2 Maximum Junction-to-Ambient Figure, t < 10 sec. 1 62.5 °C/W RθJF Typical Junction-to-Foot, one FET on 1 35 °C/W Symbol Description Value Units VDS Drain-Source Voltage 25 VVGS Gate-Source Voltage ±12 ID Continuous Drain Current @ TJ=150°C 1 TA = 25°C ±6.8 TA = 70°C ±5.4 IDM Pulsed Drain Current 3 ±24 A IS Continuous Source Current (Source-Drain Diode) 1 1.8 PD Maximum Power Dissipation 1 TA = 25°C 2.0 WTA = 70°C 1.25 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C

Electrical Characteristics (TJ=25°C unless otherwise noted) Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 10 second pulse on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. RθJF is guaranteed by design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design. Note 2: Steady state thermal response while mounted on a 1” x 1” PCB with maximum copper area is provided for comparison with other devices. This test condition approximates many battery pack applications. Note 3: Pulsed measurement 300 µs, single pulse. Note 4: Guaranteed by design. Not subject to production testing. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250µA 25 V RDS(ON) Drain-Source ON-Resistance 3 VGS=4.5V, ID=6.8A 19 26 mΩVGS=2.5V, ID=5.4A 28 41 ID(ON) On-State Drain Current 3 VGS=4.5V ,VDS=5V (Pulsed) 24 A VGS(th) Gate Threshold Voltage V GS=VDS, ID=250µA 0.6 V IGSS Gate-Body Leakage Current V GS= ±12V, VDS=0V ±100 nA IDSS Drain Source Leakage Current VGS=0V, VDS=25V 1 µAVGS=0V, VDS=20V, TJ=70°C 5 gfs Forward Transconductance 3 VDS=5V, ID=6.8A 20 S Dynamic Characteristics 4 QG Total Gate Charge V DS=15V, RD=2.2Ω, VGS=4.5V 13 19 QGS Gate-Source Charge V DS=15V, RD=2.2Ω, VGS=4.5V 1.9 nC QGD Gate-Drain Charge V DS=15V, RD=2.2Ω, VGS=4.5V 2.9 tD(ON) Turn-ON Delay V DD=15V, VGS=10V, RD=2.2Ω, RG=6Ω 15 tR Turn-ON Rise Time V DD=15V, VGS=10V, RD=2.2Ω, RG=6Ω 18 nstD(OFF) Turn-OFF Delay V DD=15V, VGS=10V, RD=2.2Ω, RG=6Ω 36 tF Turn-OFF Fall Time V DD=15V, VGS=10V, RD=2.2Ω, RG=6Ω 27 Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 3 VGS=0, IS=6.8A 1.5 V IS Continuous Diode Current 1 1.8 A AAT7103 25V N-Channel Power MOSFET 2 7103.2003.04.0.61

(TJ = 25ºC unless otherwise noted) Source-Drain Diode Forward Voltage 0.1 100 VSD (V) IS (A) TJ = 25°C TJ = 150°C Gate Charge 0 2 4 6 8 10 12 14 16 QG, Charge (nC) VGS (V) VD=15V ID=5.5A On-Resistance vs. Gate to Source Voltage 012345 VGS (V) RDS(ON) (mΩ) ID = 5.5A On-Resistance vs. Drain Current 0 8 16 24 32 ID (A) RDS(ON) (mΩ) VGS = 2.5 V VGS = 4.5 V Transfer Characteristics 0 123 4 VGS (V) ID (A) VD=VG 25°C -55°C 125°C Output Characteristics 0 0.5 1 1.5 2 2.5 3 VDS (V) IDS (A) 1.5V 3.5V 2.5V 4.5V AAT7103 25V N-Channel Power MOSFET 7103.2003.04.0.61 3

25V N-Channel Power MOSFET 4 7103.2003.04.0.61 Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech pr oduct. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific tes ting of all parameters of each device is not necessarily performed.

Ordering Information

Note: Sample stock is generally held on all part numbers listed in BOLD.

Package Information

All dimensions in millimeters. 0.175 ± 0.075 6.00 ± 0.20 1.27 BSC0.42 ± 0.09 × 8 4.90 ± 0.10 4° ± 4° 45°0.375 ± 0.125 0.235 ± 0.045 0.825 ± 0.445 Package Marking Part Number (Tape and Reel) SOP-8 7103 AAT7103IAS-T1