AA038P2-00 ALPHA | Alldatasheet

Document overview

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Technical content

Features

I Single Bias Supply Operation (5 V) I 13 dB Typical Small Signal Gain I 14 dBm Typical P1 dB Output Power at 38 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline AA038P2-00

Description

Alpha’s two-stage reactively-matched 37–40 GHz GaAs MMIC driver amplifier has typical small signal gain of 13 dB with a typical P 1 dB of 14 dBm at 38 GHz.The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Parameter Condition Symbol Min. Typ. 2 Max. Unit Drain Current IDS 75 100 mA Small Signal Gain F = 37–40 GHz G 11 13 dB Input Return Loss F = 37–40 GHz RL I -9 -6 dB Output Return Loss F = 37–40 GHz RL O -12 -10 dB Output Power at 1 dB Gain Compression F = 38 GHz P 1 dB 13 14 dBm Saturated Output Power F = 38 GHz P SA T 15 16 dBm Thermal Resistance1 ΘJC 199 °C/W Electrical Specifications at 25°C (VDS = 5 V) 0.000 0.000 0.761 3.050 1.525 1.413 0.458 1.414 2.418 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.Characteristic Value Operating Temperature (TC) -55 °C to +90°C Storage Temperature (TST) -65 °C to +150°C Bias Voltage (VD)7 V DC Power In (PIN) 16 dBm Junction Temperature (TJ) 175 °C Absolute Maximum Ratings 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip.

37–40 GHz GaAs MMIC Driver Amplifier AA038P2-00 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 Frequency (GHz) (dB) 36 37 38 39 41 42 40 Typical Small Signal Performance S-Parameters (VDS = 5 V) S21 S22 S12 S11 Typical Performance Data 5 V RF IN RF OUT .01 µF 50 pF Bias Arrangement Detail A RF IN RF OUT V See Detail A Circuit Schematic For biasing on, adjust VDS from zero to the desired value (5 V recommended). For biasing off, reverse the biasing on procedure.