AA031P1-00 ALPHA | Alldatasheet

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Technical content

Features

I Single Bias Supply Operation (5 V) I 19 dB Typical Small Signal Gain I 16 dBm Typical P1 dB Output Power at 28 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline AA031P1-00

Description

Alpha’s three-stage reactively-matched 28–32 GHz GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P 1 dB of 16 dBm at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 28–32 GHz LMDS and digital radio bands. Parameter Condition Symbol Min. Typ. 2 Max. Unit Drain Current IDS 145 200 mA Small Signal Gain F = 28–32 GHz G 17 19 dB Input Return Loss F = 28–32 GHz RL I -10 -6 dB Output Return Loss F = 28–32 GHz RL O -15 -10 dB Output Power at 1 dB Gain Compression F = 28 GHz P 1 dB 14 16 dBm Saturated Output Power F = 28 GHz P SA T 15 18 dBm Thermal Resistance1 Θ JC 101 °C/W Electrical Specifications at 25°C (VDS = 5 V) 0.000 0.085 2.500 2.415 2.093 0.000 1.365 1.255 0.6510.663 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.Characteristic Value Operating Temperature (TC ) -55 °C to +90°C Storage Temperature (TST ) -65 °C to +150°C Bias Voltage (VD )7 V DC Power In (PIN) 16 dBm Junction Temperature (TJ) 175 °C Absolute Maximum Ratings 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip.

28–32 GHz GaAs MMIC Driver Amplifier AA031P1-00 2 Alpha Industries, Inc.[781] 935-5150 • Fax [617] 824-4579• Emailsales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 1/01A Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 5 V) -45 -40 -35 -30 -25 -20 -15 -10 20 22 24 26 28 30 32 34 Gain & Return Losses (dB) S11 S12 S21 S22 Typical Power Sweep (VDS = 5 V) -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Input Power @ 28 GHz (dBm) Output Power (dBm), Gain (dB) Gain Output Power @ 28 GHz Typical Performance Data VD = 5 V RF IN RF OUT .01 µF 50 pF Bias Arrangement Detail A RF IN RF OUT VDS SEE DETAIL A Circuit Schematic For biasing on, adjust VDS from zero to the desired value (5 V recommended). For biasing off, reverse the biasing on procedure.