2SA966_07 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA966 Audio Power Amplifier Applications

  • Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −1.5 A Emitter current IE 1.5 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO V CB = −30 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO V EB = −5 V, IC = 0 ― ― −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −30 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V DC current gain hFE (Note) VCE = −2 V, IC = −500 mA 100 ― 320 Collector-emitter saturation voltage V CE (sat) I C = −1.5 A, IB = −0.03 A ― ― −2.0 V Base-emitter voltage VBE V CE = −2 V, IC = −500 mA ― ― −1.0 V Transition frequency fT V CE = −2 V, IC = −500 mA ― 120 ― MHz Collector output capacitance Cob V CB = −10 V, IE = 0, f = 1 MHz ― 40 ― pF Note: h FE classification O: 100 to 200, Y: 160 to 320 Marking A966 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code)

Collector current I C ( m A ) hFE – IC DC current gain h FE Collector current I C ( m A ) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage V BE (V) IC – VBE Collector current I C ( m A ) Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C ( W ) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) −25 Ta = 100°C 1000 100 300 500 1.0 0 20 40 60 80 100 120 140 160 180 0.2 0.4 0.6 0.8 −0.01 −0.3 100 ms* IC max (pulsed)* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −1 −3 −10 −30 −0.03 −0.05 −0.1 −0.3 −0.5 IC max (continuous) 10 ms* 1 s* 1 ms* DC operation Ta = 25°C VCEO max −25 25Ta = 100°C −1600 Common emitter VCE = −2 V −200 −400 −600 −800 −1000 −1200 −1400 Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( m A ) −1600 Common emitter Ta = 25°C IB = −1 mA −200 −400 −600 −800 −1000 −1200 −1400 −10 −25 Ta = 100°C −0.01 Common emitter IC/IB = 50 −0.03 −0.05 −0.1 −0.3 −0.5

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.