A9451 KEXIN | Alldatasheet
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www.kexin.com.cn 1 MOSFET P-Channel MOSFET A9451 ■ Features
- VDS (V) =-20V
- ID =-2.3A (VGS =±12V)
- RDS(ON) ＜ 0.135Ω (VGS =-4.5V)
- RDS(ON) ＜0.240Ω (VGS =-2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID -2.3 A Power Dissipation PD 0.5 W Thermal Resistance.Junction- to-Ambient RthJA 250 ℃/W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to +150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=10μA, VGS=0V -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 μA Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250mA -1.50 V VGS=-4.5V, ID=-2.3A 0.135 VGS=-2.5V, ID=-1.0A 0.240 Forward Transconductance1 gFS VDS=-5V, ID=-2.3A 2.3 S Input Capacitance Ciss 430 Output Capacitance Coss 100 Reverse Transfer Capacitance Crss 35 Turn-On DelayTime1,2 td(on) 9 Turn-On Rise Time2 tr 25 Turn-Off DelayTime2 td(off) 20 Turn-Off Fall Time2 tf 10 Maximum Body-Diode Continuous Current IS -1 A Diode Forward Voltage1 VSD IS=-1A,VGS=0V -1.6 V NOTES: 1. Pulse Test ; Pulse Width ≤300μs, Duty Cycle ≤2%. 2. These parameters have no way to verify. RDS(On) Static Drain-Source On-Resistance1 VGS=0V, VDS=-20V, f=1MHz pF ns Ω VGS=-5V, VDS=-10V, RL=3.3Ω, ID=-1A,RGEN=10Ω
- Marking: A9451 -0.5
www.kexin.com.cn2 MOSF ET P-Channel MOSFET A9451 ■ Typical Characterisitics -0 -1 -2 -3 -4 -5 -10 -15 -20 Ta=25℃ PulsedVGS=-4.5V -4V -3.5V -3V -2.5V -2V VGS=-1.5V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) -0 -1 -2 -3 -4 -10 -15 -20 VDS=-5V Ta=25℃ Pulsed Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) -0 -2 -4 -6 -8 -10 120 160 200 240 VGS=-2.5V VGS=-4.5V Ta=25℃ Pulsed ID— —RDS(ON) ON-RESISTANCE RDS(ON) (m ) DRAIN CURRENT ID (A) -0 -2 -4 -6 -8 -10 120 160 200 240 ID=-2.3A Ta=25℃ Pulsed VGS— —RDS(ON) ON-RESISTANCE RDS(ON) (m ) GATE TO SOURCE VOLTAGE VGS (V) -1E-3 -0.01 -0.1 VSDIS — — Ta=25℃ Pulsed SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V)