A94 DGNJDZ | Alldatasheet
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OR (PNP) Symbol Para meter&ROOHFWRU&XUUHQW3XOVHG Value Unit ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R) CBO I C= -100μA, IE=0 -400 V Co llector-emitter breakdown voltage V(B R) CEO I C= -1mA,IB= 0 -400 V Emitter-b ase breakdown voltage V( BR) EBO I E= -100μA,IC=0 -5 V Co llector cut-off current ICB O V CB= -400V, IE=0 -0. 1 μA Co llector cut-off current ICE O V CE= -400V, IB=0 -5 μA Emitter cut-off current IEBO V EB= -4 V, IC=0 -0 .1 μA hFE(1) V CE= -10V, IC= -10mA 80 300 hFE(2) V CE= -10V, IC= -1mA 70 hFE(3) V CE= -10V, IC= -100mA 60 DC cu rrent gain hFE(4) V CE= -10V, IC= -50mA 80 VCE (sat) I C= -10mA, IB=- 1mA -0.2 V Co llector-emitter saturation voltage VCE (sat) I C= -50mA, IB=- 5mA -0.3 V Bas e-emitter saturation voltage VBE ( sat) I C= -10mA, IB= - 1mA -0.75 V T ransition frequency fT VCE= -20V, IC= -10mA f =30MHz
50 MHz
-89-3L BASE 2. COLLECTOR 3. EMITTER
FEATURES
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Para meter Value Unit VCBO Coll ector-Base Voltage -400 V VCEO Coll ector-Emitter Voltage -400 V VEBO Emitter-Base V oltage -5 V IC Coll ector Current -Continuous -0.2 A ICM Coll ector Current- Pulsed -0.3 A PC Coll ector Power Dissipation 0.5 W Operation Junction and Storage Temperature Range TJ,Tstg -55~ +150 ℃ A94 MARKING: A94 SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com
-0 -4 -8 -12 -1 6 -20 -10 -12 -14 0 25 50 75 100 125 150 100 200 300 400 500 600 -10 - 100 100 -1 -10 -1 -1000 -1 -10 -1 100 -0.1 -1 -1 100 -1 -10 -1 -200 - 400 -600 -800 -1000 -10 -100 CO MMON EMITTER Ta=25℃ -100uA -90uA -80uA -70uA -60uA -50uA -40uA -30uA -20uA IB=-10uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) St atic Characteristic AMBIENT TEMPERATURE T ( )℃ COLLECT OR POWER DISSIPATION PC (mW) PC — — Ta -30 COMM ON EMITTER VCE= -20V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANS ITION FREQUENCY fT (MHz) -200 fT — — β=10 IC VBE sat — — Ta=25℃ Ta=100 ℃ BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -100 500 200 IC IC COMM ON EMITTER VCE= -10V Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE -30 -0.3 -0.03 -30-3 -30-3 -300 -30-3 300 -3-0.3 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib — — CAPACITANCE C ( pF) REVERSE VOLT AGE V (V) Cib Cob 300 -20 200 -10 -0.1 -0.01 hFE — — β=10 ICVCE sat — — Ta=100 ℃ Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (V) COMM ON EMITTER VCE=-10V COLLECTOR CURRENT IC (mA) T a=25℃ T a=100℃ BASE-EM MITER VOLTAGE VBE (mV) -200 IC — — V BE Ty pical Characteristics Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com