A94

A94 DAYA | Alldatasheet

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Technical content

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

FEATURES

MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -400 V V CEO Collector-Emitter Voltage -400 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.2 A P C Collector Power Dissipation 0.625 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR) CBO I C = -100μA, I E =0 -400 V Collector-emitter breakdown voltage V (BR) CEO I C = -1mA,I B =0 -400 V Emitter-base breakdown voltage V (BR) EBO I E =-100μA,I C =0 -5 V Collector cut-off current I CBO V CB =-400V, I E =0 -0.1 μA Collector cut-off current I CEO V CE =-400V, I B =0 -5 μA Emitter cut-off current I EBO V EB = -4V, I C =0 -0.1 μA h FE(1) V CE =-10V, I C =-10mA 80 300 h FE(2) V CE =-10V, I C =-1mA 70 DC current gain h FE(3) V CE =-10V, I C =-100mA 60 V CE (sat) I C =-10mA, I B =-1mA -0.2 V Collector-emitter saturation voltage V CE (sat) I C =-50mA, I B =-5mA -0.3 V Base-emitter saturation voltage V BE (sat) I C =-10mA, I B = -1mA -0.75 V Transition frequency f T V CE =-20V, I C =-10mA f =30MHz 50 MHz TO-92 1. EMITTER 2. BASE 3. COLLECTOR