A92 DAYA | Alldatasheet
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Technical content
TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP)
FEATURES
MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -300 V V CEO Collector-Emitter Voltage -300 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -500 mA P C Collector Power Dissipation 625 mW T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ R ӨJA Thermal Resistance, junction to Ambient 200 ℃/mW R ӨJC Thermal Resistance, unction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-100uA, I E =0 -300 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -300 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB = -200 V I E =0 -0.25 μA Emitter cut-off current I EBO V EB = -5 V, I C =0 -0.1 μA h FE(1) V CE = -10 V, IC=- 1 mA 60 h FE(2) V CE = -10V, I C = -10 mA 80 250 DC current gain h FE(3) V CE = -10 V, I C = -80 mA 60 Collector-emitter saturation voltage V CE (sat) I C = -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage V BE (sat) I C = -20 mA, IB= -2 mA -0.9 V Transition frequency f T V CE = -20 V, IC= -10 mA f = 30MHz 50 MHz CLASSIFICATION OF h FE(2) Rank A B B C Range 80-100 100-150 150-200 200-250 TO-92 1.EMITTER 2.BASE 3.COLLECTOR