2SA817A TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. Unit in mm VOLTAGE AMPLIFIER APPLICATIONS. SAMAK, « Complementary to 2SC1627A. FS + Driver Stage Application of 30 to 35 Watts Amplifiers. orsuax Tomax frit MAXIMUM RATINGS (Ta = 25°C) osmax || J Zz ri = 3) SI CHARACTERISTIC SYMBOL | RATING | UNIT a ag hae ¢ Collector Base Voltage Voso | 0 | v_| oo Collector-Emitter Voltage Vero | -80 | v | tht 2.54 Emitter Base Voltage VEBO PPh 3 Emitter Current - —— 1, EMITTER Collector Power Dissipation 2. COLLECTOR Junction Temperature _ Storage Temperature Range —55~150 JEDEC TO-92MOD TOSHIBA _2-5J1A Weight : 0.36g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [Galccwr Gato Canent | Topo |[Wep==00v, pao | — | — |=100] oa | Emitter Cut-off Current Ippo _|VeB=—5V, Io=0 | — | — |[-100[ na | Collector-Emitter Breakdown Voltage V¢BR)CEO |To= ~5mA, TB=0 | -«| - | - |v hFE(1) Vor=—2V, Ig=—50mA 70 DC Current Gain (Note) CE c bre) |VcE=-2V, I¢= -200mA | 4of — | = | Collector-Emitter Saturation Voltage Verteat) [10= ~200mA, p= —~20mA | = | = | -»4] | Base-Emitter Voltage Vop= ~2V, Io=~5mA |-0.55] — | -o8| v_| Von=-10V, Io=-10ma | — | 100 | — | mn | Vop=~10V, ip=0, f=1mme [ — | us [ — | or | Note : hpR(1) Classification O: 70~140, Y : 120~240 26100182 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Gparating sanjer as fet forth in the Moe recur products cpechicntons Alcs, blgede Lesp in mind ae precautions and conditions set tort i the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION for any Infuingerments of ristectsal Bropernyor exh rants EP tse inva paries bien tay Fesui hom Is use. Wo Neanse is grantee by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. e the information contained herein is subject to change without notice. 1997-09-01 1/2
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