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SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE z Collector-Base Voltage z MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C= -5uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO I C= -1mA , I B=0 -50 V Emitter-base breakdown voltage V(BR)EBO I E= -50uA, IC=0 -5 V Collector cut-off current ICBO V CB= -60 V , I E=0 -0.1 uA Emitter cut-off current IEBO V EB= -5 V , I C=0 -0.1 uA DC current gain hFE V CE= -6 V, IC= -1mA 120 475 Collector-emitter saturation voltage VCE(sat) I C= -100mA, IB=- 10mA -0.18 -0.3 V Base-emitter voltage VBE(on) V CE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V Transition frequency fT V CE=-6V,IC=-10mA 50 MHz Collector output capacitance Cob V CB=-10V,IE=0,f=1MHZ 4.5 7 pF Noise figure NF VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ 6 20 dB CLASSIFICATION OF hFE Rank L H Range 120-220 220-475 MARKING CS SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 2012-0 WILLAS ELECTRONIC CORP. A733
-0.1 -1 -10 -100 100 200 300 -1 -10 -100 -10 -100 -0.1 -1 -10 -1 -10 -100 200 0 25 50 75 100 125 150 100 150 200 250 -0.1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -2 -4 -6 -8 -10 -150 fT —— I C hFE —— COMMON EMITTER VCE=-6V -3 -30-0.3 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC Ta=25℃ -30 -300 -30-0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ ICVCEsat —— -500 -150 -3-0.3 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz I E=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— CAPACITANCE C (pF) 300 100 -3 -30 VCE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) Ta Typical Characterisitics COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC —— -150 VBEIC —— -30 -0.3 Ta=25℃ Ta=100℃ COMMON EMITTER VCE=-6V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) -0.5 -30-0.2 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ -150 ICVBEsat —— Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA -4uA IB=-2uA COMMON EMITTER T a=25℃ 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors A733
Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) COMMON EMITTER T a=25℃ 2012-0 WILLAS ELECTRONIC CORP.2012-0 W ILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors A733