IRIS-A6351 IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
Oscillator is provided on the monolithic control IC with adopting On-Chip- Trimming technology. Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Low start-up circuit current (50uA max) Built-in Active Low-Pass Filter for stabilizing the operation in case of light load Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. Built-in constant voltage drive circuit Various kinds of protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) INTEGRATED SWITCHER Package Outline
8 Lead PDIP
IRIS-A6351 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram 1111 2222 3333 4444 8888 7777 6666 5555 IRIS-A6351 MOSFET RDS(ON) Pout(W) VDSS(V) M A X No t e 1 230±15% 10 85 to 264 8 Type ACinput(V ) IRIS-A6351 650 3.95 Ω Key Specifications Data Sheet No. PD 96936A Note 1: The Pout(W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 150% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout(W) shall become lower than that of above.
www.irf.com 2 *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V 1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. *6 When embedding this hybrid IC onto the printed circuit board (board size 15mm ×15mm) Absolute Maximum Ratings (Ta=25℃℃℃℃) (Refer Gnd 2 and 5) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. IRIS-A6351 Symbol Definition Terminals Max. Ratings Units Note IDpeak Drain Current *1 8 2.36 A Single Pulse V1-2=0.82V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=2.36A Vin Input voltage for control part 3-2 35 V Vth O.C.P/F.B Pin voltage 4-2 6 V P D1 Power dissipation for MOSFET *3 8-1 1.35 W *6 Power dissipation for control part (Control IC) *4 Internal frame temperature Refer to recommended in operation operating temperature Top Operating ambient temperature - -20 ~ +125 ℃ Tstg Storage temperature - -40 ~ +125 ℃ Tch Channel temperature - 150 ℃ A Single pulse avalanche energy *2 8-1EAS 56 mJ Maximum switching current *5 8IDMAX 2.36 Specified by Vin×Iin -TF -20 ~ +125 ℃ 3-2PD2 0.14 W V1-2 Fig.1
www.irf.com 3 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25 ℃, Vin=20V,unless otherwise specified) MIN TYP MAX Vin(ON) Operation start voltage 15.8 17.6 19.4 V Vin =0→19.4V Iin(ON) Circuit current in operation - - 5 mA - Iin(OFF) Circuit current in non-operation - - 50 µ A Vin=15V TOFF(MAX) Maximum OFF time 12 15 18 µsec - Vin=27.8→ (Vin(OFF)-0.3)V Tj(TSD) Thermal shutdown operating temperature 135 - - ℃ - Ratings Units Test Conditions Iin(H) -- 7 0 µ ALatch circuit sustaining current *8 DefinitionSymbol Electrical Characteristics (for MOSFET) *7 The relation of Vin(OFF)＞Vin(La.OFF) is applied for each product. (Ta=25℃) unless otherwise specified MIN TYP MAX ID=300µA V2-1 =0V (short) VDS=650V V2-1 =0V (short) V3-2 =10V ID=0.4A tf Switching time - - 250 nsec - Between channel and internal frame 300 -5 2 ℃/W θch-F - Thermal resistance *9 Symbol µA On-resistanceRDS(ON) - - 3.95 Ω Drain leakage currentIDSS VDSS 650 - - Ratings Units Test Conditions Drain-to-Source breakdown voltage V Definition *9 Internal frame temperature (T F) is measured at the root of the Pin 5. IRIS-A6351
www.irf.com 4 IRIS-A6351 MOSFET A.S.O. Curve 0.01 0.1 100 1 10 100 1000 Drain-to-Source Voltage VDS[V] Drain Current ID[A] IRIS-A6351 0.1ms 1ms Drain current limit by ON resistance ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. IRIS-A6351 A.S.O. temperature derating coefficient curve 100 0 2 04 06 08 0 1 0 0 1 2 0 Internal frame temperature TF [℃] A.S.O. temperature derating coefficient[%] IRIS-A6351 Maximum Switching current derating curve Ta=‐20～+125 ℃ 0.8 0.9 1 1.1 1.2 V 1-2 [V] Maximum Switchng Current IDMAX[A] IRIS-A6351 Avalanche energy derating curve 100 25 50 75 100 125 150 Channel temperature Tch [ ℃] EAS temperature derating coefficient [%] Ta=25ºC Single Pulse
www.irf.com 5 IRIS-A6351 Transient thermal resistance curve 0.01 0.1 time t [sec] Transient thermal resistance θch-a[ ℃/W] IRIS-A6351 TF-PD2 Curve for Control IC 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 Internal frame temperature TF[℃] Power dissipation PD2[W] IRIS-A6351 MOSFET Ta-PD1 Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 Ambient temperature Ta[℃] Power dissipation PD1[W] IRIS-A6351 PD1=1.35[W] PD2=0.14[W] 1µ 10µ 100µ 1m 10m 100m
www.irf.com 6 Pin No. Symbol Descri ption Function
1 S Source Pi n MOSFET source
2 GND Ground Pin Ground
3 Vin Power supply Pin Input of power supply for control circuit
Input of overcurrent detection signal / constant voltage control signal
5 GND Ground Pin Ground
6 N.C. - Not Connected 7,8 D Drain Pi n MOSFET drain 4O C P / F B Overcurrent / Feedback Pin IRIS-A6351 Latch Drive Delay Q PWM Latch S R Icont OCP Comp. OSC UVLO REG Internal Bias Vin GND S D REG OCP/FB TSD OVP 7,8 2,5 Block Diagram Lead Assignments Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit Source GND Vin OCP/FB Drain N.C. GND Drain Pin Assignment (Top View)
www.irf.com 7 A6351 IRIRIRIR a b c 8 7 6 5 1 2 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. IRIS-A6351 Case Outline a. Type Number b. Lot Number 1st letter：The last digit of year 2nd letter：Month (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) rd letter：Week 1～3 : Arabic numerals c. Registration Number Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g