IRIS-A6159 IRF | Alldatasheet
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Technical content
Features
Small sized 8-pin DIP type full molded package, optimum IC for low- height SMPS Off-timer circuit is provided on the monolithic control IC Low start-up circuit current (10uA typ) Low circuit current at operation (1.5mA typ) Avalanche energy guaranteed MOSFET with high VDSS /head2rightThe built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. /head2rightNo VDSS de-rating is required. Built-in Start-up circuit (the power loss in the start-up circuit is reduced by cutting off the start-up circuit after the IC starts its operation.) Auto Burst Stand-by (realizing input power<0.1W at no load) Auto Bias Function (stable burst operation without the interference on transformer) Two operational modes by auto switching functions /head2rightFor normal operation: PRC mode /head2rightFor stand-by operation (at light load): Burst mode Built-in Leading Edge Blanking Function Built-in constant voltage drive circuit Various kinds of protection functions /head2rightPulse-by-pulse Overcurrent Protection (OCP) /head2rightOverload Protection with auto recovery (OLP) /head2rightOvervoltage Protection with latch mode (OVP) /head2rightThermal Shutdown with latch mode (TSD) INTEGRATED SWITCHER Package Outline
8 Lead PDIP
IRIS-A6159 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Note: PRC is abbreviation for “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram Type MOSFET VDSS(V) RDS(ON) MAX ACinput(V ) Pout(W) Note 1 230±15% 7 85 to 264 5IRIS-A6159 650 6 Ω Key Specifications Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above value. DDDDD DDD OOOOCCCCPPPP FFFFBBBBVVVVccccccccG GGGNNNNDDDD 22221111 33334 444 555577778888 6666 SSSSttttaaaarrrrttttuuuuppppNNNNCCCC IIIIRRRRIIIISSSS----AAAA6666111155559999 Data Sheet No. PD 96934A
www.irf.com 2 *1 Refer to MOSFET A.S.O curve *2 Refer to MOSFET Tch-EAS curve *3 Refer to MOSFET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC *5 When embedding this hybrid IC onto the printed circuit board (board size 15mm ×15mm) Absolute Maximum Ratings (Ta=25℃℃℃℃) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. IRIS-A6159 Symbol Definitio n Terminals Max. Ratin gs Units Note IDpeak Drain Current *1 8-3 1.8 A Single Pulse V1-3=0.86V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=1.8A VOCP O.C.P. pin Voltage 1-3 -0.5~6 V VCC Input voltage for control part 2-3 35 V VFB/OLP F.B/O.L.P pin voltage 4-3 -0.5~10 V Vstartup Startup pin voltage 5-3 -0.3~600 V PD1 Power dissipation for MOSFET *3 8-3 1.35 W *5 Power dissipation for control part (Control IC) *4 Internal frame temperature Refer to recommended in operation operating temperature Top Operating ambient temperature - -20 ~ +125 ℃ Tstg Storage temperature - -40 ~ +125 ℃ Tch Channel temperature - 150 ℃ A Single pulse avalanche energy *2 8-3EAS 24 mJ Maximum switching current 8-3IDMAX 1.8 Specified by Vcc×ICC -TF -20 ~ +125 ℃ 2-3PD2 0.15 W
www.irf.com 3 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25 ℃, Vin=20V,unless otherwise specified) MIN TYP MAX VCC(ON) Operation start voltage 16 17.5 19.2 V VCC=0→19.2V VCC(OFF) Operation stop voltage 9 10 11 V VCC=19.2→9V ICC(ON) Circuit current in operation - - 4 mA - ICC(OFF) Circuit current in non-operation - - 50 µ A VCC=14V VCC(bias) Auto bias threshold voltage 9.6 10.6 11.6 V VCC=20→9.6V - Vcc(bias) - Vcc(OFF) 0.2 - - V - TOFF(MAX) Maximum OFF time 7.3 8 8.7 µsec - Tbw Leading edge blanking time 200 320 480 nsec - Vburst Burst threshold voltage 0.7 0.79 0.88 V - IOLP Out-flow current at O.L.P operation 18 26 35 µ A - IFB(MAX) Maximum F.B. current 227 300 388 µ A - IST ART UP Startup current 340 790 1230 µ A VCC=15V ISTART(leak) Startup circuit leakage current - - 30 µ A - Tj(TSD) Thermal shutdown operating temperature 135 - - ℃ - DefinitionSymbol ICC(H) - - 200Latch circuit sustaining current *6 Ratings VCC=34.1→8.5V Units Test Conditions µA Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified MIN TYP MAX ID=300µA V1-3 =0V (short) VDS=650V V1-3 =0V (short) RDS(ON) On-resistance - - 6 Ω ID=0.4A tf Switching time - - 250 nsec - Between channel and internal frame℃/WThermal resistance *7θch-F - - 300 -5 2 Symbol µADrain leakage currentIDSS - VDSS 650 - - Ratings Units Test Conditions Drain-to-Source breakdown voltage V Definition *7 Internal frame temperature (T F) is measured at the root of the Pin 3. IRIS-A6159
www.irf.com 4 IRIS-A6159 MOSFET A.S.O. Curve 0.01 0.1 100 1 10 100 1000 Drain-to-Source Voltage VDS[V] Drain Current ID[A] IRIS-A6159 Drain current limit by ON resistance 0.1ms 1ms ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. IRIS-A6159 A.S.O. temperature derating coefficient curve 100 0 20 40 60 80 100 120 Internal frame temperature TF [℃] A.S.O. temperature derating coefficient[%] IRIS-A6159 Avalanche energy derating curve 100 25 50 75 100 125 150 Channel temperature Tch [ ℃] EAS temperature derating coefficient [%] Ta=25ºC Single Pulse
www.irf.com 5 IRIS-A6159 Transient thermal resistance curve 0.01 0.1 time t [sec] Transient thermal resistance θch-a[℃/W] IRIS-A6159 1µ 10µ 100µ 1m 10m 100m IRIS-A6159 MOSFET Ta-PD1 Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[℃] Power dissipation PD1[W] IRIS-A6159 MIC TF-PD2 Curve 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 Internal frame temperature TF[℃] Power dissipation PD2[W] PD2=0.15[W]PD1=1.35[W]
www.irf.com 6 Pin No. Symbol Description Function
1 S/OCP Source Pin/OCP MOSFET source / Over current Protection
2 VCC Power supply Pin Input of power supply for control circuit
3 GND Ground Pin Ground
Input of constant voltage control signal/over load protection signal
5 Startup Startup pin Input of Startup current
6 N.C. - Not Connected
7 Drain Drain Pin MOSFET drain
8 Drain Drain Pin MOSFET drain
4 FB/OLP Feedback/OLP pin
O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit S/OCP GND VCC FB/OLP Drain N.C. Startup Drain Pin Assignment (Top View) TTTTSSSSDDDD OOOOVVVVPPPP DDDDeeeellllaaaayyyyLLLLaaaattttcccchhhh－ UUUUVVVVLLLLOOOO IIIInnnntttteeeerrrrnnnnaaaallll BBBBiiiiaaaassss DDDDrrrriiiivvvveeee OOOOLLLLPPPPSQ R BBBBiiiiaaaassss BBBBuuuurrrrsssstttt FFFFBBBB PPPPWWWWMMMMLLLLaaaattttcccchhhh DDDDiiiisssscccchhhhaaaarrrrggggeeee OOOOCCCCPPPP VVVVcccccccc 5555 2222 7777
8888 DDDD
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www.irf.com 7 A6159 IRIRIRIR a b c 8 7 6 5 1 2 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. IRIS-A6159 Case Outline a. Type Number b. Lot Number 1st letter：The last digit of year 2nd letter：Month (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) rd letter：Week 1～3 : Arabic numerals c. Registration Number Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g