A4770 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com A4770 POWER SWITCH 100mΩ POWER DISTRIBUTION SWITCHES REV2.1 - JUL 2011 RELEASED, JUL 2020 UPDATED - - 1 - DESCRIPTION FEATURES The A4770 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus (USB) applications. A built -in charge pump is used to drive the N -channel NMOSFET that is free of parasitic body diode to eliminate an y reversed current flow across the switch when it is powered off. Its low quiescent supply current (23μA) and small package (SOT -25) is particularly suitable in battery-powered portable equipment. Several protection functions include soft start to limit inrush current during plug-in, current limiting at 1.1/1.3A to meet USB power requirement, and thermal shutdown to protect damage under over current conditions. The A4770 is available in SOT-25 package.

ORDERING INFORMATION

SPQ: 3,000pcs/Reel A4770E5R-XY A4770E5VR-XY Note X=Maximum Current A=1.1A B=1.3A Y=Package Type (See Pin Description) A=A Type B=B Type V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  100mΩ (Typ.) High-Side NMOSFET (SOT-25)  1.1/1.3A Current Limit  Small SOT-25 Package Minimizes Board Space  Soft Start  Thermal Protection  Low 23μA Supply Current  Wide Input Voltage Range: 2.2V ~ 6V  Available in SOT-25 package APPLICATION  Battery-Powered Equipment  Motherboard USB Power Switch  USB Device Power Switch  Hot-Plug Power Supplies  Battery-Charger Circuits TYPICAL APPLICATION

AiT Semiconductor Inc. www.ait-ic.com A4770 POWER SWITCH 100mΩ POWER DISTRIBUTION SWITCHES REV2.1 - JUL 2011 RELEASED, JUL 2020 UPDATED - - 2 - PIN DESCRIPTION Top View Top View Pin # Symbol Function Type A Type B 1, 5 3 VOUT Output Voltage 2 2 GND Ground 3 4 VIN Power Input 4 5 EN Chip Enable - 1 NC No Connected

AiT Semiconductor Inc. www.ait-ic.com A4770 POWER SWITCH 100mΩ POWER DISTRIBUTION SWITCHES REV2.1 - JUL 2011 RELEASED, JUL 2020 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS VDD, Input Voltage 7.0V VEN, EN to GND Voltage -0.3V ~ 7.0V PD, Power Dissipation, TA = 25℃ SOT-25 0.25W θJA, Thermal Resistance SOT-25 250℃/W Lead Temperature (Soldering, 10 sec.) 260℃ TSTG, Storage Temperature Range -65℃ ~ 150℃ Operating Ambient Temperature -20℃ ~ 100℃ ESD Susceptibility HBM 6000V MM 600V Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

VIN = 5V, CIN = COUT = 1μF, unless otherwise noted. Typical values are at TA = + 25°C. Parameter Symbol Conditions Min. Typ. Max. Unit Input Voltage Range VIN 2.2 - 6 V NMOS Output On-Resistance RDS(ON) IL = 500mA - 100 110 mΩ Quiescent Current IQ VIN = 3V - 19 40 μA VIN = 5V - 23 45 Turn-On Time tR RL = 10Ω, 90% Settling - 400 - μs Current Limit Setting ILIMIT A4770E5R-A 1.1 1.3 1.5 A A4770E5R-B 1.3 1.5 1.7 EN PIN Input High Voltage - 1.5 - - V EN PIN Input Low Voltage - - - 0.8 V Shutdown Current IOFF EN = “0” - 0.1 1 μA Output Leakage Current ILEAKAGE EN = “0”, VOUT = 0V - 0.5 10 μA VIN Under Voltage Lockout UVLO 1.3 1.8 - V VIN Under Voltage Hysteresis - - 100 - mV Thermal Limit TSD - 130 - °C Thermal Limit Hysteresis ΔTSD - 20 - °C

AiT Semiconductor Inc. www.ait-ic.com A4770 POWER SWITCH 100mΩ POWER DISTRIBUTION SWITCHES REV2.1 - JUL 2011 RELEASED, JUL 2020 UPDATED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Ron vs. Temp 2. Ron vs. VIN BLOCK DIAGRAM

AiT Semiconductor Inc. www.ait-ic.com A4770 POWER SWITCH 100mΩ POWER DISTRIBUTION SWITCHES REV2.1 - JUL 2011 RELEASED, JUL 2020 UPDATED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-25 (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950 BSC 0.037 BSC e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com A4770 POWER SWITCH 100mΩ POWER DISTRIBUTION SWITCHES REV2.1 - JUL 2011 RELEASED, JUL 2020 UPDATED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life supp ort applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.