A44 DAYA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 400 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 0.625 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100μA , I E =0 400 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA , I B =0 400 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =400 V, I E =0 0.1 μA Collector cut-off current I CEO V CE =400 V 5 μA Emitter cut-off current I EBO V EB = 4V, I C =0 0.1 μA h FE (1) V CE =10V , I C =10mA 80 300 h FE(2) V CE =10V, I C =1mA 70 h FE(3) V CE =10V, I C =100mA 40 DC current gain h FE(4) V CE =10V, I C =50mA 80 V CE(sat) I C =10mA, I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat) I C =50mA, I B =5mA 0.3 V Base-emitter sataration voltage V BE(sat) I C =10mA, I B = 1mA 0.75 V Transition frequency f T V CE =20V, I C =10mA f =30MHz 50 MHz CLASSIFICATION OF h FE(1) Rank A B1 B2 C Range 80-100 100-150 150-200 200-300 TO-92 1. EMITTER 2. BASE 3. COLLECTOR