A42_V02 DGNJDZ | Alldatasheet

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Technical content

TRANSISTOR ( NPN

FEATURES

MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA PC Collector Power Dissipation 625 mW Operation Junction and Storage Temperature Range ℃TJ,Tstg -55-150 RӨJA Thermal Resistance, junction to Ambient 200 ℃ /W TO-92 1. EMITTER 2. BASE 3. COLLECTOR ICM Collector Current - Pulsed 500 mA ORDERING INFORMATION/g3 Part Number Package Packing Method Pack Quantity /g3/g55/g50/g16/g28/g21/g3 /g37/g88/g79/g78/g3 1000pcs/Bag /g3/g55/g50/g16/g28/g21/g3/g55 /g68/g83/g72/g3 2000pcs/Box A42 A42/g16/g55/g36 /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit /g3 /g59/g59/g59/g32/g38/g82/g71/g72 Z /g3Z=Rank of hFE A42/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 A42 /g59/g59/g59 DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

/g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 a T =25 /g1071 unless otherwise specified Parameter Sy m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 310 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 305 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =200V, I E =0 0.25 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA h FE(1) V CE =10V, I C =1mA 60 h FE(2) V CE =10V, I C =10mA 80 250 DC current gain h FE(3) V CE =10V, I C =30mA 75 Collector-emitter saturation voltage V CE(sat) I C =20mA, I B =2mA 0.2 V Base-emitter saturation voltage V BE(sat) I C =20mA, I B =2mA 0.9 V Transition frequency f T V CE =20V, I C =10mA,f=30MH Z

50 MHz

FE(2) Rank A B C Ra nge 80-100 100-200 200-250 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

0.1 1 10 100 100 0.1 1 10 100 1000 0.01 0.1 100 0 25 50 75 100 125 150 100 150 200 250 300 350 400 450 500 550 600 650 0.1 1 10 100 0.01 0.1 1 10 100 100 1000 0.1 1 10 100 02468 1 0 1 2 1 4 I C f T COMMON EMITTER V CE =20V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 300 β =10 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURREMT I C (mA) T a =100 T a =25 P C —— T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) 500 T a =100 T a =25 β =10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURREMT I C (mA) I C h FE T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =10V C ib f=1MHz I E =0/I C T a =25 V CB EB C ob ib C ob REVERSE VOLTAGE V (V) CAPACITANCE C (pF) 45uA 18uA 27uA 36uA 54uA 63uA 72uA 81uA COMMON EMITTER T a =25 I B =9uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) I C —— V CE Typical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

/g48/g76/g81/g48/g68/g91/g48/g76/g81/g48/g68/g91 A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D4 ./g22/g19/g194.700/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g25/g28/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g27/g24 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 /g301 1.600 0.063 h 0.000 0.380 0.000 0.015 /g54/g92/g80/g69/g82/g79/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g48/g76/g79/g79/g76/g80/g72/g87/g72/g85/g86 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g44/g81/g70/g75/g72/g86 1.270 TYP 0.050 TYP /g55/g50/g16/g28/g21/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g55/g50/g16/g28/g21/g3/g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87 /g3 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

/g55/g50/g16/g28/g21/g37DSHDQG5HHO Dongguan Nanjing Electronics Ltd. www.dgnjdz.com