MPSA42 LUGUANG | Alldatasheet
Document overview
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Technical content
http://www.lg1 esemi.com Revision:20170701-P1 mail:lge@lgesemi.com A42 B • X X X TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN)
FEATURES
- EMITTER 2. BASE 3. COLLECTOR MARKING Equivalent Circuit A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of h FE XXX=Code
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity A42 T0-92 Bulk 1000pcs/Bag A42-TA T0-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 310 V V CEO Collector-Emitter Voltage 305 V V EBO Emitter-Base Voltage 5 V I C Collector Curren t -Continuous 200 mA I CM Collector Current - Pulsed 500 mA P C Collector Power Dissipation 625 mW P C Collector Power Dissipation(Tc=25℃) 1.5 W TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ R ӨJA Thermal Resistance, junction to Ambient 200 ℃ /mW R ӨJC Thermal Resistance, junction t o Case 83.3 ℃ /mW
http://www.lg2 esemi.com Revision:20170701-P1 mail:lge@lgesemi.com
ELECTRICAL CHARACTERISTICS
Ta =25 c unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0. 1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE(1) VCE=10V, IC=10mA 40 hFE(2) VCE=10V, IC=30mA 40 hFE(3) VCE=10V, IC=1.0mA 25 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V Transition frequency fT VCE=20V, IC=10mA,f=30MHZ 50 MHz Output Capacitance Cob VCB=20V,IE=0,f=1.0MHZ 3.0 pF v CLASSIFICATION OF hFE(2) Rank A B C Range 80-100 100-200 200-250
http://www.lgesemi.com 3 Revision:20170701-P1 mail:lge@lgesemi.com ——COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION COLLECTOR CURRENT I (mA) VOLTAGE V (V) C P (mW) CAPACITANCE C (pF) CEsat C BASE-EMITTER SATURATION DC CURRENT GAIN h TRANSITION FREQUENCY f (MHz) VOLTAGE V (V) FE T BEsat II I Typical Characteristics
14 COMMON EMITTER
T =25℃ a V C CE 81uA 72uA 63uA 54uA 45uA 36uA 1000 100 h — — I FE C T =100℃ a T =25℃ a 4 27uA 18uA 2 I =9uA B 0 2 4 6 8 10 12 14 COMMON EMITTER V =10V CE 1 10 100 COLLECTOR-EMITTER VOLTAGE V (V) CE COLLECTOR CURRENT I C (mA) V — — CEsat C 10 100 V — — BEsat C T =25℃ a 0.1 T =100 ℃ a T =100 ℃ a T =25℃ a 0.1 0.01 β =10 0.01 β =10 0.1 1 10 100 500 0.1 1 10 100 1000 COLLECTOR CURREMT I C (mA) COLLECTOR CURREMT I C (mA) C /C — — V /V f — — I 100 ob ib CB EB f=1MHz I =0/I =0 T C 300 E C =25 ℃ T C a ib 100 C ob 1 10 COMMON EMITTER V =20V CE T =25℃ a 0.1 1 10 20 0.1 1 10 100 REVERSE VOLTAGE V (V) COLLECTOR CURRENT I C (mA) 650 P — — T C a 600 550 500 450 400 350 300 250 200 150 100 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T a (℃ )
http://www.lgese mi.com 4 Revision:20170701-P1 mail:lge@lgesemi.com Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P 0.050 TY P e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 TO-92 Suggested Pad Layout
T0-92 PACKAGE TAPING DIMENSION p T0-92 Tape and Reel T Dimiensions are in millimeter A1 A T p PO P2 F1 F2 w wo W1 W2 H HO DO t1 t2 .6.P Trailer Tape Component LeaderTape
10 Empty pockets 10 Empty pockets
Package Box Box Size(mm) Carton Carton Size(mm) T0-92 2000pcs 333x162x43 20,000pcs 350x340x250 T0-92 PACKAGE BULK R evision:20170701-P1 mail:lge@lgesemi.com Package Bag Box Box Size(mm) Carton Carton Size(mm) T0-92 1000pcs 10，000pcs 235x170x100 50,000pcs 485x245x180