A42 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 DIP Type Transistors NPN High Voltage transistor A42 ■ Features

  • Epitaxial planar die construction.
  • Ideal for medium power amplification and switching.
  • Complementary PNP type available (A92). ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 300 V Collector-to-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V Emitter-to-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5 V Collector cut-off current IcBO VCB= 200 V , IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA VCE= 10V, IC= 1mA 60 VCE= 10V, IC= 10mA 80 250 VCE= 10V, IC= 30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB= 2mA 0.9 V Transition frequency fT VCE= 20V, IC= 10mA,f=30MHz 50 MHz hFEDC current gain ■ hFE Classification Rank A B1 B2 C hFE 80 to 100 100 to 150 150 to 200 200 to 250 0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20 1.27TYP [1.27 ±0.20 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58 +0.25 –0.15 0.38 +0.10 –0.05 0.38 +0.10 –0.05 TO-92 1. Emitter 2. Base 3. Collector Unit: mm 1 2 3

2www.kexin.com.cn ■ Typical Characteristics SMD Type ICDIP Type Transistors A42

3www.kexin.com.cn SMD Type ICDIP Type Transistors A42 ■ Typical Characteristics