A42

A42 DAYA | Alldatasheet

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Technical content

TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR ( NPN

FEATURES

MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 300 V V CEO Collector-Emitter Voltage 300 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 500 mA P C Collector Power Dissipation 625 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ R ӨJA Thermal Resistance, junction to Ambient 200 ℃/mW R ӨJC Thermal Resistance, unction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 300 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 300 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =200V, I E =0 0.25 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA h FE(1) V CE =10V, I C =1mA 60 h FE(2) V CE =10V, I C =10mA 80 250 DC current gain h FE(3) V CE =10V, I C =30mA 75 Collector-emitter saturation voltage V CE(sat) I C =20mA, I B =2mA 0.2 V Base-emitter saturation voltage V BE(sat) I C =20mA, I B =2mA 0.9 V Transition frequency f T V CE =20V, I C =10mA,f=30MH Z

50 MHz

FE(2) Rank A B B C Range 80-100 100-150 150-200 200-250 TO-92 1. EMITTER 2. BASE 3. COLLECTOR

T y p i c a l C h a r a c t e r i s t i c s A 4 2