A3PN010QNG100PP

A3PN030-ZVQG100 MICROSEMI | Alldatasheet

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© 2013 Microsemi Corporation ProASIC3 nano Flash FPGAs Features and Benefits Wide Range of Features

• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off High Performance
• 350 MHz System Performance In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard (AES) Decryption via JTAG (IEEE 1532–compliant)†
• FlashLock ® Designed to Secure FPGA Contents Low Power
• Low Power ProASIC ®3 nano Products
• 1.5 V Core Voltage for Low Power
• Support for 1.5 V-Only Systems
• Low-Impedance Flash Switches High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B, Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate † and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family Clock Conditioning Circuit (CCC) and PLL†
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz) Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)† Enhanced Commercial Temperature Range
• –20°C to +70°C † A3PN030 and smaller devices do not support this feature. Table 1 • ProASIC3 nano Devices ProASIC3 nano Devices A3PN010 A3PN015 1 A3PN020 A3PN060 A3PN125 A3PN250 ProASIC3 nano-Z Devices1 A3PN030Z1,2 A3PN060Z1 A3PN125Z1 A3N250Z1 System Gates 10,000 15,000 20,000 30,000 60,000 125,000 250,000 Typical Equivalent Macrocells 86 128 172 256 512 1,024 2,048 VersaTiles (D-flip-flops) 260 384 520 768 1,536 3,072 6,144 RAM Kbits (1,024 bits)2 – – – – 18 36 36 4,608-Bit Blocks2 –– – – 4 8 8 FlashROM Kbits 1 1 1 1 1 1 1 Secure (AES) ISP2 –– – – Y e s Y e sY e s Integrated PLL in CCCs2 –– – – 1 1 1 VersaNet Globals 4 4 4 6 18 18 18 I/O Banks 2 3 3 2 2 2 4 Maximum User I/Os (packaged device) 34 49 49 77 71 71 68 Maximum User I/Os (Known Good Die) 34 – 52 83 71 71 68 Package Pins QFN VQFP QN48 QN68 QN68 QN48, QN68 VQ100 VQ100 VQ100 VQ100 Notes: 1. Not recommended for new designs. 2. A3PN030Z and smaller devices do not support this feature. 3. For higher densities and support of additional features, refer to the ProASIC3 and ProASIC3E datasheets. Revision 11

ProASIC3 nano Device Status ProASIC3 nano Devices A3PN010 A3PN015 1 A3PN020 A3PN060 A3PN125 A3PN250 ProASIC3 nano-Z Devices1 A3PN030Z1 A3PN060Z1 A3PN125Z1 A3PN250Z1 Known Good Die 34 – 52 83 71 71 68 QN68 – 49 49 49 – – – V Q 1 0 0 – ––7 77 17 16 8 Notes: 1. Not recommended for new designs. 2. When considering migrating your design to a lower- or higher-density device, refer to the ProASIC3 FPGA Fabric User’s Guide to ensure compliance with design and board migration requirements. 3. "G" indicates RoHS-compliant packages. Refer to "ProASIC3 nano Ordering Information" on page III for the location of the "G" in the part number. For nano dev ices, the VQ100 package is offered in both leaded and RoHS-compliant versions. All other packages are RoHS-compliant only. Table 2 • ProASIC3 nano FPGAs Package Sizes Dimensions Length × Width (mm\\mm) 6 x 6 8 x 8 14 x 14 Nominal Area (mm2) 36 64 196 Pitch (mm) 0.4 0.4 0.5 Height (mm) 0.90 0.90 1.20 ProASIC3 nano Devices Status ProASIC3 nano-Z Devices Status A3PN010 Production A3PN015 Not recommended for new designs. A3PN020 Production A3PN030Z Not recommended for new designs. A3PN060 Production A3PN060Z Not recommended for new designs. A3PN125 Production A3PN125Z Not recommended for new designs. A3PN250 Production A3PN250Z Not recommended for new designs.

ProASIC3 nano Ordering Information Devices Not Recommended For New Designs A3PN015, A3PN030Z, A3PN060Z, A3PN125Z, and A3PN250Z are not recommended for new designs. Device Marking Microsemi normally topside marks the full ordering part number on each device. There are some exceptions to this, such as some of the Z feature grade nano devices, the V2 designator for IGLOO devices, and packages where space is physically limited. Packages that have limited characters available are UC36, UC81, CS81, QN48, QN68, and QFN132. On these specific packages, a subset of the device marking will be used that includes the required legal information and as much of the part number as allowed by character limitation of the device. In this case, devices will have a truncated device marking and may exclude the applications markings, such as the I designator for Industrial Devices or the ES designator for Engineering Samples. Figure 1 on page 1-IV shows an example of device marking based on the AGL030V5-UCG81. Note: *For the A3PN060, A3PN125, and A3PN250, the Z feature gr ade does not support the enhanc ed nano features of Schmitt trigger input, cold-sparing, and hot-swap I/O capability. The A3PN030 Z feature grade does not support Schmitt trigger input. For the VQ100, CS81, UC81, QN68, and QN48 packages, the Z feature grade and the N part number are not marked on the device. A3PN010 = 10,000 System Gates A3PN015 = 15,000 System Gates (A3PN015 is not recommended for new designs) A3PN020 = 20,000 System Gates A3PN030 = 30,000 System Gates A3PN060 = 60,000 System Gates A3PN125 = 125,000 System Gates A3PN250 = 250,000 System Gates Speed Grade Blank = Standard Blank = Standard Feature Grade Z = nano devices without enhanced features* (Not recommended for new designs) A3PN250 Z 1 VQ_ Part Number ProASIC3 nano Devices Package Type VQ = Very Thin Quad Flat Pack (0.5 mm pitch) DIELOT = Known Good Die QN = Quad Flat Pack No Leads (0.4 mm and 0.5 mm pitches) 100 YI Package Lead Count G Lead-Free Packaging Application (Temperature Range) Blank = Commercial (0°C to +70°C Ambient Temperature) I = Industrial ( –40°C to +85°C Ambient Temperature) Blank = Standard Packaging G= RoHS-Compliant Packaging PP= Pre-Production ES= Engineering Sample (Room Temperature Only) 1 = 15% Faster than Standard 2 = 25% Faster than Standard Security Feature Y = Device Includes License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio Blank = Device Does Not Include License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio

The actual mark will vary by the device/package combination ordered. ProASIC3 nano Products Available in the Z Feature Grade Temperature Grade Offerings Speed Grade and Temperature Grade Matrix Contact your local Microsemi SoC Products Group representative for device availability: http://www.microsemi.com/soc/contact/default.aspx. Figure 1 • Example of Device Marking for Small Form Factor Packages Devices A3PN030* A3PN060* A3PN125* A3PN250* QN68 – – – VQ100 VQ100 VQ100 VQ100 Note: *Not recommended for new designs. ProASIC3 nano Devices A3PN010 A3PN015* A3PN020 A3PN060 A3PN125 A3PN250 ProASIC3 nano-Z Devices* A3PN030Z* A3PN060Z* A3PN125Z* A3PN250Z* QN68 – C, I C, I C, I – – – VQ100 – – – C, I C, I C, I C, I Note: *Not recommended for new designs. C = Commercial temperature range: 0°C to 70°C ambient temperature I = Industrial temperature range: –40°C to 85°C ambient temperature Temperature Grade Std. C 1  I 2  Notes: 1. C = Commercial temperature range: 0°C to 70°C ambient temperature. 2. I = Industrial temperature range: –40°C to 85°C ambient temperature. ACTELXXX AGL030YWW UCG81XXXX XXXXXXXX Country of Origin Date Code Customer Mark (if applicable) Device Name (six characters) Package Wafer Lot #

ProASIC3 nano Device Overview ProASIC3 nano DC and Switching Characteristics Pin Descriptions and Packaging Package Pin Assignments Datasheet Information

1 – ProASIC3 nano Device Overview General Description ProASIC3, the third-generation fami ly of Microsemi flash FPGAs, of fers performance, density, and features beyond those of the ProASIC PLUS® family. Nonvolatile flash technology gives ProASIC3 nano devices the advantage of being a secure, low power, single-chip solution that is Instant On. ProASIC3 nano devices are reprogrammable and offer time-to-mark et benefits at an ASIC-level unit cost. These features enable designers to create high-density systems using existing ASIC or FPGA design flows and tools. ProASIC3 nano devices offer 1 kbit of on-chip, re programmable, nonvolatile FlashROM storage as well as clock conditioning circuitry based on an integrated phase-locked loop (PLL). A3PN030 and smaller devices do not have PLL or RAM support. ProASIC3 nano devices have up to 250,000 system gates, supported with up to 36 kbits of true dual-port SRAM and up to 71 user I/Os. ProASIC3 nano devices increase the breadth of the Pr oASIC3 product line by adding new features and packages for greater customer value in high volume consumer, portable, and battery-backed markets. Added features include smaller footprint packages designed with two-layer PCBs in mind, low power, hot-swap capability, and Schmitt trigger for greater flexibility in low-cost and power-sensitive applications. Flash Advantages Reduced Cost of Ownership Advantages to the designer extend beyond low unit cost, performance, and ease of use. Unlike SRAM- based FPGAs, flash-based ProASIC3 nano devices allow all functionality to be Instant On; no external boot PROM is required. On-boar d security mechanisms prevent access to all the programming information and enable secure remote updates of the FPGA logic. Designers can perform secure remote in-system reprogramming to support future design iterations and field upgra des with confidence that valuable intellectual property (IP) cannot be compromised or copied. Secure ISP can be performed using the industry-standard AES algorithm. The ProASIC3 nano device architecture mitigates the need for ASIC migration at higher user volumes. This make s the ProASIC3 nano device a cost-effective ASIC replacement solution, especially for applicatio ns in the consumer, networking/communications, computing, and avionics markets. With a variety of devices under $1, ProASIC3 nano FPGAs enable cost-effective implementation of programmable logic and quick time to market. Security Nonvolatile, flash-based ProASIC3 nano devices do not require a boot PROM, so there is no vulnerable external bitstream that can be ea sily copied. ProASIC3 nano devices incorporate FlashLock, which provides a unique combination of reprogrammabilit y and design security without external overhead, advantages that only an FPGA with nonvolatile flash programming can offer. ProASIC3 nano devices utilize a 128-bit flash-based lock and a separate AES key to provide the highest level of protection in the FPGA industry for progra mmed intellectual property and configuration data. In addition, all FlashROM data in ProASIC3 nano de vices can be encrypted prior to loading, using the industry-leading AES-128 (FIPS192 ) bit block cipher encryption standard. The AES standard was adopted by the National Institute of Standards and Technology (NIST) in 2000 and replaces the 1977 DES standard. ProASIC3 nano devices have a built-in AES decry ption engine and a flash-based AES key that make them the most co mprehensive programmable logic device security solution available today. ProASIC3 nano devices with AES-based security provide a high level of protection for remote field updates over public networks such as the Internet, and are designed to ensure that valuable IP remains out of the hands of system overbuilders, system cloners, and IP thieves.

ProASIC3 nano Device Overview Security, built into the FPGA fabric, is an inherent component of ProASIC3 nano devices. The flash cells are located beneath seven metal layers, and many device design and layout techniques have been used to make invasive attacks extremely difficult. ProASIC3 nano devices, with FlashLock and AES security, are unique in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is protected with industry-standard security, making remote ISP possible. A ProASIC3 nano device provides the best available security for programmable logic designs. Single Chip Flash-based FPGAs store their configuration informati on in on-chip flash cells. Once programmed, the configuration data is an inherent part of the FPGA structure, and no external configuration data needs to be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based ProASIC3 nano FPGAs do not require system configuration compo nents such as EEPROMs or microcontrollers to load device configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system reliability. Instant On Microsemi flash-based ProASIC3 nano devices support Level 0 of the Instant On classification standard. This feature helps in system component initializ ation, execution of critic al tasks before the processor wakes up, setup and configuration of memory blo cks, clock generation, and bus activity management. The Instant On feature of flash-based ProASIC3 nano devices greatly simplifies total system design and reduces total system cost, often eliminating the need for CPLDs and clock generation PLLs that are used for these purposes in a system. In addition, glitch es and brownouts in system power will not corrupt the ProASIC3 nano device's flash configuration, and unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is restored. This enab les the reduction or complete removal of the configuration PROM, expensive voltage monitor, br ownout detection, and clock generator devices from the PCB design. Flash-based ProASIC3 nano devices simplify total system design and reduce cost and design risk while increasing system reliability and improving system initialization time. Firm Errors Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike a configuration cell of an SRAM FPGA. The energ y of the collision can ch ange the state of the configuration cell and thus change t he logic, routing, or I/O behavior in an unpredictable way. These errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a complete system failure. Firm errors do not exist in the configuration memory of ProASIC3 nano flash- based FPGAs. Once it is programmed, the flash cell configuration element of ProASIC3 nano FPGAs cannot be altered by high-energy neutrons and is therefore immune to them. Recoverable (or soft) errors occur in the user data SRAM of all FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric. Low Power Flash-based ProASIC3 nano devices exhibit power ch aracteristics similar to an ASIC, making them an ideal choice for power-sensitive applications. ProASIC3 nano devices have only a very limited power-on current surge and no high-current transition period, both of which occur on many FPGAs. ProASIC3 nano devices also have low dynamic power consumption to further maximize power savings. Advanced Flash Technology ProASIC3 nano devices offer many benefits, includ ing nonvolatility and reprogrammability through an advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design techniques are used to implement logic and contro l functions. The combination of fine granularity, enhanced flexible routing resources, and abundant fl ash switches allows for very high logic utilization without compromising device routability or perform ance. Logic functions within the device are interconnected through a four-level routing hierarchy.

The ProASIC3 nano core consists of VersaTiles, which have been enhanced beyond the ProASICPLUS® core tiles. The ProASIC3 nano VersaTile supports the following:

• All 3-input logic functions—LUT-3 equivalent
• Latch with clear or set
• D-flip-flop with clear or set
• Enable D-flip-flop with clear or set Refer to Figure 1-5 for VersaTile configurations. User Nonvolatile FlashROM ProASIC3 nano devices have 1 kbit of on-chip, user-accessible, nonvolatile FlashROM. The FlashROM can be used in diverse system applications:
• Internet protocol addressing (wireless or fixed)
• System calibration settings
• Device serialization and/or inventory control
• Subscription-based business models (for example, set-top boxes)
• Secure key storage for secure communications algorithms
• Asset management/tracking
• Date stamping
• Version management The FlashROM is written using the standard ProA SIC3 nano IEEE 1532 JTAG programming interface. The core can be individually programmed (erased and written), and on-chip AES decryption can be used selectively to securely load data over public networks (except in the A3PN030 and smaller devices), as in security keys stored in the FlashROM for a user design. The FlashROM can be programmed via the JTAG progr amming interface, and its contents can be read back either through the JTAG programming interface or via direct FPGA core addressing. Note that the FlashROM can only be programmed from the JTAG interface and cannot be programmed from the internal logic array. The FlashROM is programmed as 8 banks of 128 bits ; however, reading is performed on a byte-by-byte basis using a synchronous interface. A 7-bit address fr om the FPGA core defines which of the 8 banks and which of the 16 bytes within that bank are being read. The three most significant bits (MSBs) of the FlashROM address determine the bank, and the four least significant bits (LSBs) of the FlashROM address define the byte. The ProASIC3 nano development software solutions, Libero ® System-on-Chip (SoC) software and Designer, have extensive support for the FlashROM. One such feature is aut o-generation of sequential programming files for applications requiring a unique serial number in each part. Another feature enables the inclusion of static data for system version co ntrol. Data for the FlashROM can be generated quickly and easily using Libero SoC and Designer software to ols. Comprehensive programming file support is also included to allow for easy programming of large numbers of parts with differing FlashROM contents. Figure 1-5 • VersaTile Configurations YX2 LUT-3 Data Y CLK Enable CLR D-FF Data Y CLK CLR D-FF LUT-3 Equivalent D-Flip-Flop with Clear or Set Enable D-Flip-Flop with Clear or Set

ProASIC3 nano Device Overview SRAM and FIFO ProASIC3 nano devices (except the A3PN030 and smaller devices) have embedded SRAM blocks along their north and south sides. Each variable-aspect-rati o SRAM block is 4,608 bits in size. Available memory configurations ar e 256×18, 512×9, 1k×4, 2k×2, and 4k×1 bits. The in dividual blocks have independent read and write ports that can be confi gured with different bit widths on each port. For example, data can be sent through a 4-bit port and read as a single bitstream. The embedded SRAM blocks can be initialized via the device JTAG port (ROM emulation mode) using the UJTAG macro (except in A3PN030 and smaller devices). In addition, every SRAM block has an embedded FI FO control unit. The contro l unit allows the SRAM block to be configured as a synchronous FIFO with out using additional core VersaTiles. The FIFO width and depth are programmable. The FIFO also feat ures programmable Almost Empty (AEMPTY) and Almost Full (AFULL) flags in addition to the norma l Empty and Full flags. The embedded FIFO control unit contains the counters necessary for generati on of the read and write address pointers. The embedded SRAM/FIFO blocks can be cascaded to create larger configurations. PLL and CCC Higher density ProASIC3 nano devices using either the two I/O bank or four I/O bank architectures provide the designer with very flexible clock co nditioning capabilities. A3PN060, A3PN125, and A3PN250 contain six CCCs. One CCC (center west side) has a PLL. The A3PN030 and smaller devices use different CCCs in their arch itecture. These CCC-GLs contain a global MUX but do not have any PLLs or programmable delays. For devices using the six CCC block architecture, these six CCC blocks are located at the four corners and the centers of the east and west sides. All six CCC blocks are usable; the four corner CCCs and the east CCC allo w simple clock delay operations as well as clock spine access. The inpu ts of the six CCC blocks are accessible from the FPGA core or from dedicated connections to the CCC block, which are located near the CCC. The CCC block has these key features:

• Wide input frequency range (f IN_CCC) = 1.5 MHz to 350 MHz
• Output frequency range (f OUT_CCC) = 0.75 MHz to 350 MHz
• Clock delay adjustment via programmable a nd fixed delays from –7.56 ns to +11.12 ns
• 2 programmable delay types for clock skew minimization
• Clock frequency synthesis (for PLL only) Additional CCC specifications:
• Internal phase shift = 0°, 90°, 180°, and 270°. Output phase shift depends on the output divider configuration (for PLL only).
• Output duty cycle = 50% ± 1.5% or better (for PLL only)
• Low output jitter: worst case < 2.5% × clock per iod peak-to-peak period jitter when single global network used (for PLL only)
• Maximum acquisition time = 300 µs (for PLL only)
• Low power consumption of 5 mW
• Exceptional tolerance to input period jitter—allowabl e input jitter is up to 1.5 ns (for PLL only)
• Four precise phases; maximum misalignment between adjacent phases of 40 ps × (350 MHz / f OUT_CCC) (for PLL only) Global Clocking ProASIC3 nano devices have extensive support for mu ltiple clocking domains. In addition to the CCC and PLL support described above, there is a comprehensive global clock distribution network. Each VersaTile input and output port has access to nine VersaNets: six chip (main) and three quadrant global networks. The VersaNets can be driven by the CCC or directly accessed from the core via multiplexers (MUXes). The VersaNets can be used to distribute low-skew clock signals or for rapid distribution of high fanout nets.

I/Os with Advanced I/O Standards ProASIC3 nano FPGAs feature a flexible I/O structure, supporting a range of voltages (1.5 V, 1.8 V, 2.5 V, and 3.3 V). The I/Os are organized into banks, with two, three, or four banks per device. T he configuration of these banks determines the I/O standards supported. Each I/O module contains several input, output, and enable registers. These registers allow the implementation of various single-data-rate applications for all versions of nano devices and double-data- rate applications for the A3PN060, A3PN125, and A3PN250 devices. ProASIC3 nano devices support LVTTL and LVCMOS I/O standards, are hot-swappable, and support cold-sparing and Schmitt trigger. Hot-swap (also called hot-plug, or hot-insertion) is the operation of hot-insertion or hot-removal of a card in a powered-up system. Cold-sparing (also called cold-swap) refers to the ability of a device to leave system data undisturbed when the system is powered up, while the component itself is powered down, or when power supplies are floating. Wide Range I/O Support ProASIC3 nano devices support JEDEC-defined wide range I/O operation. ProASIC3 nano supports the JESD8-B specification, covering both 3 V and 3.3 V supplies, for an effective operating range of 2.7 V to 3.6 V. Wider I/O range means designers can eliminate power supplies or power conditioning components from the board or move to less costly components wit h greater tolerances. Wide range eases I/O bank management and provides enhanced protection from system voltage spikes, while providing the flexibility to easily run custom voltage applications. Specifying I/O States During Programming You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information. Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have limited display of Pin Numbers only. 1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during programming. 2. From the FlashPro GUI, click PDB Configurat ion. A FlashPoint – Pr ogramming File Generator window appears. 3. Click the Specify I/O States During Programming button to display the Specify I/O States During Programming dialog box. 4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header. Select the I/Os you wish to modify (Figure 1-6 on page 1-8). 5. Set the I/O Output State. You can set Basic I/O se ttings if you want to use the default I/O settings for your pins, or use Custom I/O settings to cust omize the settings for each pin. Basic I/O state settings: 1 – I/O is set to drive out logic High 0 – I/O is set to drive out logic Low Last Known State – I/O is set to the last value that was driven out prior to entering the programming mode, and then held at that value during programming

ProASIC3 nano Device Overview Z -Tri-State: I/O is tristated 6. Click OK to return to the FlashPoint – Programming File Generator window. I/O States During programming are saved to the AD B and resulting programming files after completing programming file generation. Figure 1-6 • I/O States During Programming Window

2 – ProASIC3 nano DC and Switching Characteristics General Specifications The Z feature grade does not support the enhanced nano features of Schmitt trigger input, cold-sparing, and hot-swap I/O capability. Refer to the "ProASIC3 nano Ordering Information" section on page III for more information. DC and switching characteristics for –F speed grade targets are based only on simulation. The characteristics provided for the –F speed grade are subject to change after establishing FPGA specifications. Some restrictions might be added and will be reflected in future revisions of this document. The –F speed grade is only supported in the commercial temperature range. Operating Conditions Stresses beyond those listed in Table 2-1 may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings are stress ratings only; functional operation of th e device at these or any other conditions beyond those listed under the Recommended O perating Conditions specified in Table 2-2 on page 2-2 is not implied. Table 2-1 • Absolute Maximum Ratings Symbol Parameter Limits Units VCC DC core supply voltage –0.3 to 1.65 V VJTAG JTAG DC voltage –0.3 to 3.75 V VPUMP Programming voltage –0.3 to 3.75 V VCCPLL Analog power supply (PLL) –0.3 to 1.65 V VCCI DC I/O output buffer supply voltage –0.3 to 3.75 V VI I/O input voltage –0.3 V to 3.6 V V T STG

1 Storage temperature –65 to +150 °C

1 Junction temperature +125 °C

Notes: 1. For flash programming and retention maximum limits, refer to Table 2-3 on page 2-2, and for recommended operating limits, refer to Table 2-2 on page 2-2. 2. VMV pins must be connected to the corresponding VCCI pins. See the "VMVx I/O Supply Voltage (quiet)" section on page 3-1 for further information. 3. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may undershoot or overshoot according to the limits shown in Table 2-4 on page 2-3.

ProASIC3 nano DC and Switching Characteristics Table 2-2 • Recommended Operating Conditions 1, 2 Symbol Parameter Extended Commercial Industrial Units TA Ambient temperature –20 to +70 2 –40 to +85 2 °C TJ Junction temperature –20 to +85 –40 to +100 °C VJTAG JTAG DC voltage 1.4 to 3.6 1.4 to 3.6 V VPUMP 4 Programming voltage Programming Mode 4 3.15 to 3.45 3.15 to 3.45 V Operation 5 0 to 3.6 0 to 3.6 V VCCI and VMV 7

3.3 V Wide Range supply voltage

8 2.7 to 3.6 2.7 to 3.6 V Notes: 1. All parameters representing voltages are measured with respect to GND unless otherwise specified. 2. To ensure targeted reliability standards are met across ambient and junction operating temperatures, Microsemi recommends that the user follow best design practices using Microsemi’s timing and power simulation tools. 3. The ranges given here are for power supplies only. T he recommended input voltage ranges specific to each I/O standard are given in Table 2-14 on page 2-16. VMV and VCCI should be at the same voltage within a given I/O bank. 4. The programming temperature range su pported is Tambient = 0°C to 85°C. 5. VPUMP can be left floating during operation (not programming mode). 6. VCCPLL pins should be tied to VCC pins. See the "Pin Descriptions and Packaging" chapter for further information. 7. VMV pins must be connected to the corresponding VCCI pins. See the "Pin Descriptions and Packaging" chapter for further information. 8. 3.3 V Wide Range is compliant to the JESD8-B specification and supports 3.0 V VCCI operation. Table 2-3 • Flash Programming Limits – Retention, Storage and Operating Temperature1 Product Grade Programming Cycles Program Retention (biased/unbiased) Maximum Storage Temperature TSTG (°C) 2 Maximum Operating Junction Temperature TJ (°C) 2 Commercial 500 20 years 110 100 Industrial 500 20 years 110 100 Notes: 1. This is a stress rating only; functional operation at any condition other than those indicated is not implied. 2. These limits apply for program/data retention only. Refer to Table 2-1 on page 2-1 and Table 2-2 for device operating conditions and absolute limits.

I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial) Sophisticated power-up management circui try is designed into every ProASIC ®3 device. These circuits ensure easy transition from the powered-off state to the powered-up state of the device. The many different supplies can power up in any sequence with minimized current spikes or surges. In addition, the I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1 on page 2-4. There are five regions to consider during power-up. ProASIC3 I/Os are activated only if ALL of the following three conditions are met: 1. VCC and VCCI are above the minimum specified trip points ( Figure 2-1 on page 2-4). 2. VCCI > VCC – 0.75 V (typical) 3. Chip is in the operating mode. VCCI Trip Point: Ramping up: 0.6 V < trip_point_up < 1.2 V Ramping down: 0.5 V < trip_point_down < 1.1 V VCC Trip Point: Ramping up: 0.6 V < trip_point_up < 1.1 V Ramping down: 0.5 V < trip_point_down < 1 V VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:

• During programming, I/Os become tristated and weakly pulled up to VCCI.
• JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O behavior. PLL Behavior at Brownout Condition Microsemi recommends using monotonic power supplie s or voltage regulators to ensure proper power- up behavior. Power ramp-up should be monotonic at least until VCC and VCCPLLX exceed brownout activation levels. The VCC activation level is specified as 1.1 V worst-case (see Figure 2-1 on page 2-4 for more details). When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25 V), the PLL output lock signal goes low and/ or the output clock is lost. Refer to the "Power-Up/-Down Behavior of Low Po wer Flash Devices" chapter of the ProASIC3 nano FPGA Fabric User’s Guide for information on clock and lock recovery. Table 2-4 • Overshoot and Undershoot Limits 1 VCCI and VMV Average VCCI–GND Overshoot or Undershoot Duration as a Percentage of Clock Cycle 2 Maximum Overshoot/ Undershoot 2 2.7 V or less 10% 1.4 V 5% 1.49 V 3 V 10% 1.1 V 5% 1.19 V 3.3 V 10% 0.79 V 5% 0.88 V 3.6 V 10% 0.45 V 5% 0.54 V Notes: 1. Based on reliability requirements at 85°C. 2. The duration is allowed at one out of si x clock cycles. If the overshoot/unders hoot occurs at one out of two cycles, the maximum overshoot/undershoot has to be reduced by 0.15 V.

ProASIC3 nano DC and Switching Characteristics Internal Power-Up Activation Sequence 1. Core 2. Input buffers 3. Output buffers, after 200 ns delay from input buffer activation Figure 2-1 • I/O State as a Function of VCCI and VCC Voltage Levels Region 1: I/O buffers are OFF Region 2: I/O buffers are ON. I/Os are functional but slower because VCCI / VCC are below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH / VOL levels. Min VCCI datasheet specification voltage at a selected I/O standard; i.e., 1.425 V or 1.7 V or 2.3 V or 3.0 V VCC VCC = 1.425 V Region 1: I/O Buffers are OFF Activation trip point: Va = 0.85 V ± 0.25 V Deactivation trip point: Vd = 0.75 V ± 0.25 V Activation trip point: Va = 0.9 V ± 0.3 V Deactivation trip point: Vd = 0.8 V ± 0.3 V VCC = 1.575 V Region 5: I/O buffers are ON and power supplies are within specification. I/Os meet the entire datasheet and timer specifications for speed, VIH / VIL , VOH / VOL , etc. Region 4: I/O buffers are ON. I/Os are functional but slower because VCCI is below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH/VOL levels. where VT can be from 0.58 V to 0.9 V (typically 0.75 V) VCCI Region 3: I/O buffers are ON. I/Os are functional; I/O DC specifications are met, but I/Os are slower because the VCC is below specification. VCC = VCCI + VT

The temperature variable in the Designer software re fers to the junction temperature, not the ambient temperature. This is an important distinction because dynamic and st atic power consumption cause the chip junction to be higher than the ambient temperature. EQ 1 can be used to calculate junction temperature. TJ = Junction Temperature = T + TA EQ 1 where: T A = Ambient Temperature T = Temperature gradient between junction (silicon) and ambient T = ja * P ja = Junction-to-ambient of the package. ja numbers are located in Table 2-5. P = Power dissipation Package Thermal Characteristics The device junction-to-case thermal resistivity is jc and the junction-to-ambient air thermal resistivity is ja. The thermal characteristics for ja are shown for two air flow rates. The absolute maximum junction temperature is 100°C. EQ 2 shows a sample calculation of the absolute maximum power dissipation allowed for a 484-pin FBGA package at commercial temperature and in still air. EQ 2 Temperature and Voltage Derating Factors Maximum Power Allowed Max. junction temp. (C) Max. ambient temp. ( C)– Table 2-5 • Package Thermal Resistivities Package Type Device Pin Count jc ja UnitsStill Air 200 ft./min. 500 ft./min. Quad Flat No Lead (QFN) All devices 48 TBD TBD TBD TBD C/W

68 TBD TBD TBD TBD C/W

100 TBD TBD TBD TBD C/W

Very Thin Quad Flat Pack (VQFP) All devices 100 10.0 35.3 29.4 27.1 C/W Table 2-6 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 70°C, VCC = 1.425 V) Array Voltage VCC (V) Junction Temperature (°C) –40°C –20°C 0°C 25°C 70°C 85°C 100°C

ProASIC3 nano DC and Switching Characteristics Calculating Power Dissipation Quiescent Supply Current Power per I/O Pin Table 2-7 • Quiescent Supply Current Characteristics A3PN010 A3PN015 A3PN020 A3PN060 A3PN125 A3PN250 Typical (25°C) 600 µA 1 mA 1 mA 2 mA 2 mA 3 mA Max. (Commercial) 5 mA 5 mA 5 mA 10 mA 10 mA 20 mA Max. (Industrial) 8 mA 8 mA 8 mA 15 mA 15 mA 30 mA Note: IDD includes VCC, VPUMP, and VCCI, currents. Table 2-8 • Summary of I/O Input Buffer Power (Per Pin) – Default I/O Software Settings VCCI (V) Dynamic Power, PAC9 (µW/MHz) Single-Ended 3.3 V LVTTL / 3.3 V LVCMOS 3.3 16.45 3.3 V LVTTL / 3.3 V LVCMOS – Schmitt Trigger 3.3 18.93 3.3 V LVCMOS wide range2 3.3 16.45 3.3 V LVCMOS wide range – Schmitt Trigger 3.3 18.93 2.5 V LVCMOS 2.5 4.73 2.5 V LVCMOS – Schmitt Trigger 2.5 6.14 1.8 V LVCMOS 1.8 1.68 1.8 V LVCMOS – Schmitt Trigger 1.8 1.80 1.5 V LVCMOS (JESD8-11) 1.5 0.99 1.5 V LVCMOS (JESD8-11) – Schmitt Trigger 1.5 0.96 Notes: 1. PAC9 is the total dynamic power measured on VCCI. 2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification.

Table 2-9 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1 CLOAD (pF) 2 VCCI (V) Dynamic Power, PAC10 (µW/MHz) 3 Single-Ended 3.3 V LVTTL / 3.3 V LVCMOS 10 3.3 162.01 3.3 V LVCMOS wide range4 10 3.3 162.01 2.5 V LVCMOS 10 2.5 91.96 1.8 V LVCMOS 10 1.8 46.95 1.5 V LVCMOS (JESD8-11) 10 1.5 32.22 Notes: 1. Dynamic power consumption is given for standard load and software default drive strength and output slew. 2. Values for A3PN020, A3PN015, and A3PN010. A3PN060, A3PN125, and A3PN250 correspond to a default loading of 35 pF. 3. PAC10 is the total dynamic power measured on VCCI. 4. All LVCMOS3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification.

ProASIC3 nano DC and Switching Characteristics Power Consumption of Various Internal Resources Table 2-10 • Different Components Contributing to Dynamic Power Consumption in ProASIC3 nano Devices Parameter Definition Device Specific Dynamic Contributions (µW/MHz) A3PN250 A3PN125 A3PN060 A3PN020 A3PN015 A3PN010 PAC3 Clock contribution of a VersaTile row 0.81 PAC4 Clock contribution of a VersaTile used as a sequential module 0.12 PAC5 First contribution of a VersaTile used as a sequential module 0.07 PAC6 Second contribution of a VersaTile used as a sequential module 0.29 PAC7 Contribution of a VersaTile used as a combinatorial Module 0.29 PAC8 Average contribution of a routing net 0.70 PAC9 Contribution of an I/O input pin (standard-dependent) See Table 2-8 on page 2-6. PAC10 Contribution of an I/O output pin (standard-dependent) See Table 2-9 on page 2-7. PAC11 Average contribution of a RAM block during a read operation

25.00 N/A

PAC12 Average contribution of a RAM block during a write operation

30.00 N/A

PAC13 Dynamic contribution for PLL 2.60 N/A Note: For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi Power spreadsheet calculator or SmartPower tool in Libero SoC. Table 2-11 • Different Components Contributing to the Static Power Consumption in ProASIC3 nano Devices Parameter Definition Device Specific Static Power (mW)A3PN250 A3PN125 A3PN060 A3PN020 A3PN015 A3PN010 PDC1 Array static power in Active mode See Table 2-7 on page 2-6. PDC4 Static PLL contribution 1 2.55 N/A PDC5 Bank quiescent power (VCCI-dependent) See Table 2-7 on page 2-6. Notes: 1. Minimum contribution of the PLL when running at lowest frequency. 2. For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi Power spreadsheet calculator or SmartPower tool in Libero SoC.

Power Calculation Methodology This section describes a simplified method to estima te power consumption of an application. For more accurate and detailed power estimations, use the SmartPower tool in Libero SoC. The power calculation methodology described below uses the following variables:

• The number of PLLs as well as the number a nd the frequency of each output clock generated
• The number of combinatorial and sequential cells used in the design
• The internal clock frequencies
• The number and the standard of I/O pins used in the design
• The number of RAM blocks used in the design
• Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-12 on page 2-11.
• Enable rates of output buffers—guidelines are provided for typical applications in Table 2-13 on page 2-11.
• Read rate and write rate to the memory—guidel ines are provided for typical applications in Table 2-13 on page 2-11. The calculation should be repeated for each clock domain defined in the design. Methodology Total Power Consumption—P TOTAL PTOTAL = PSTAT + PDYN PSTAT is the total static power consumption. PDYN is the total dynamic power consumption. Total Static Power Consumption—P STAT PSTAT = PDC1 + NINPUTS* PDC2 + NOUTPUTS* PDC3 NINPUTS is the number of I/O input buffers used in the design. NOUTPUTS is the number of I/O output buffers used in the design. Total Dynamic Power Consumption—P DYN PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL Global Clock Contribution—P CLOCK PCLOCK = (PAC1 + NSPINE*PAC2 + NROW*PAC3 + NS-CELL* PAC4) * FCLK NSPINE is the number of global spines used in the user design—guidelines are provided in the "Spine Architecture" section of the Global Resources chapter in the ProASIC3 nano FPGA Fabric User's Guide. NROW is the number of VersaTile rows used in the design—guidelines are provided in the "Spine Architecture" section of the Global Resources chapter in the ProASIC3 nano FPGA Fabric User's Guide. FCLK is the global clock signal frequency. NS-CELL is the number of VersaTiles used as sequential modules in the design. PAC1, PAC2, PAC3, and PAC4 are device-dependent. Sequential Cells Contribution—P S-CELL PS-CELL = NS-CELL * (PAC5 + 1 / 2 * PAC6) * FCLK NS-CELL is the number of VersaTiles used as sequent ial modules in the design. When a multi-tile sequential cell is used, it should be accounted for as 1. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-12 on page 2-11. FCLK is the global clock signal frequency.

ProASIC3 nano DC and Switching Characteristics Combinatorial Cells Contribution—P C-CELL PC-CELL = NC-CELL* 1 / 2 * PAC7 * FCLK NC-CELL is the number of VersaTiles used as combinatorial modules in the design. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-12 on page 2-11. FCLK is the global clock signal frequency. Routing Net Contribution—P NET PNET = (NS-CELL + NC-CELL) * 1 / 2 * PAC8 * FCLK NS-CELL is the number of VersaTiles used as sequential modules in the design. NC-CELL is the number of VersaTiles used as combinatorial modules in the design. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-12 on page 2-11. FCLK is the global clock signal frequency. I/O Input Buffer Contribution—P INPUTS PINPUTS = NINPUTS * 2 / 2 * PAC9 * FCLK NINPUTS is the number of I/O input buffers used in the design. 2 is the I/O buffer toggle rate—guidelines are provided in Table 2-12 on page 2-11. FCLK is the global clock signal frequency. I/O Output Buffer Contribution—P OUTPUTS POUTPUTS = NOUTPUTS * 2 / 2 * 1 * PAC10 * FCLK NOUTPUTS is the number of I/O output buffers used in the design. 2 is the I/O buffer toggle rate—guidelines are provided in Table 2-12 on page 2-11. 1 is the I/O buffer enable rate—guidelines are provided in Table 2-13 on page 2-11. FCLK is the global clock signal frequency. RAM Contribution—P MEMORY PMEMORY = PAC11 * NBLOCKS * FREAD-CLOCK * 2 + PAC12 * NBLOCK * FWRITE-CLOCK * 3 NBLOCKS is the number of RAM blocks used in the design. FREAD-CLOCK is the memory read clock frequency. 2 is the RAM enable rate for read operations. FWRITE-CLOCK is the memory write clock frequency. 3 is the RAM enable rate for write operations—guidelines are provided in Table 2-13 on page 2-11. PLL Contribution—P PLL PPLL = PDC4 + PAC13 * FCLKOUT FCLKOUT is the output clock frequency.1 1. The PLL dynamic contribution depends on th e input clock frequency, the number of output clock signals generated by the PLL, and the frequency of each output clock. If a PLL is used to generate more than one output clock, include each output clock in the formula by adding its corresponding contribution (PAC14 * FCLKOUT product) to the total PLL contribution.

A toggle rate defines the frequency of a net or logic elem ent relative to a clock. It is a percentage. If the toggle rate of a net is 100%, this means that this net switches at half the clock frequency. Below are some examples:

• The average toggle rate of a shift register is 100% because all flip-flop outputs toggle at half of the clock frequency.
• The average toggle rate of an 8-bit counter is 25%: – Bit 0 (LSB) = 100% – Bit 1 = 50% – Bit 2 = 25% – Bit 7 (MSB) = 0.78125% Enable Rate Definition Output enable rate is the average percentage of ti me during which tristate outputs are enabled. When nontristate output buffers are used, the enable rate should be 100%. Table 2-12 • Toggle Rate Guidelines Recommended for Power Calculation Component Definition Guideline 1 Toggle rate of VersaTile outputs 10% 2 I/O buffer toggle rate 10% Table 2-13 • Enable Rate Guidelines Recommended for Power Calculation Component Definition Guideline 1 I/O output buffer enable rate 100% 2 RAM enable rate for read operations 12.5% 3 RAM enable rate for write operations 12.5%

ProASIC3 nano DC and Switching Characteristics User I/O Characteristics Timing Model Figure 2-2 • Timing Model Operating Conditions: –2 Speed, Commercial Temperature Range (TJ = 70°C), Worst Case VCC = 1.425 V, with Default Loading at 10 pF DQ Y Y DQDQ DQY Combinational Cell Combinational Cell Combinational Cell I/O Module (Registered) I/O Module (Non-Registered) Register Cell Register Cell I/O Module (Registered) I/O Module (Non-Registered) LVCMOS 2.5V Output Drive Strength = 8 mA High Slew Rate Input LVCMOS 2.5 V LVCMOS 1.5 V LVTTL 3.3 V Output drive strength = 8 mA High slew rate Y Combinational Cell Y Combinational Cell Y Combinational Cell I/O Module (Non-Registered) LVTTLOutput drive strength = 8 mA High slew rate I/O Module (Non-Registered) LVCMOS 1.5 VOutput drive strength = 2 mA High slew rate LVTTLOutput drive strength = 4 mA High slew rate I/O Module (Non-Registered) Input LVTTL Clock Input LVTTL Clock Input LVTTL Clock tPD = 0.56 ns tPD = 0.49 ns tDP = 2.25 ns tPD = 0.87 ns tDP = 2.87 ns tPD = 0.51 ns tDP = 2.21 ns tPD = 0.47 ns tDP = 3.02 ns tPD = 0.47 ns tPY = 0.84 ns tCLKQ = 0.55 ns tOCLKQ = 0.59 ns tSUD = 0.43 ns tOSUD = 0.31 ns tDP = 2.21 ns tPY = 0.84 ns tPY = 1.14 ns tCLKQ = 0.55 ns tSUD = 0.43 ns tPY = 0.84 ns tICLKQ = 0.24 ns tISUD = 0.26 ns tPY = 1.04 ns

Figure 2-3 • Input Buffer Timing Model and Delays (example) tPY (R) PAD Y Vtrip GND tPY (F) Vtrip 50%50% VIH VCC VIL tDIN (R) DIN GND tDIN (F) 50%50% VCC PAD Y tPY D CLK Q I/O Interface DIN tDIN To Array tPY = MAX(tPY(R), tPY(F)) tDIN = MAX(tDIN(R), tDIN(F))

ProASIC3 nano DC and Switching Characteristics Figure 2-4 • Output Buffer Model and Delays (example) tDP (R) PAD VOL tDP (F) VtripVtrip VOH VCC D 50% 50% VCC 0 V DOUT 50% 50% 0 V tDOUT (R) tDOUT (F) From Array PAD tDP Std Load D CLK Q I/O Interface DOUT D tDOUT tDP = MAX(tDP(R), tDP(F)) tDOUT = MAX(tDOUT(R), tDOUT(F))

Figure 2-5 • Tristate Output Buffer Timing Model and Delays (example) D CLK Q D CLK Q 10% VCCI tZL Vtrip 50% tHZ 90% VCCI tZH Vtrip 50% 50% tLZ 50% EOUT PAD D E 50% tEOUT (R) 50% tEOUT (F) PAD DOUT EOUT D I/O Interface E tEOUT tZLS Vtrip 50% tZHS Vtrip 50%EOUT PAD D E 50% 50%tEOUT (R) tEOUT (F) 50% VCC VCC VCC VCCI VCC VCC VCC VOH VOL VOL tZL, tZH, tHZ, tLZ, tZLS, tZHS tEOUT = MAX(tEOUT(r), tEOUT(f))

ProASIC3 nano DC and Switching Characteristics Overview of I/O Performance Summary of I/O DC Input and Output Levels – Default I/O Software Settings Table 2-14 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions—Softwar e Default Settings I/O Standard Drive Strength Equivalent Software Default Drive Strength Option2 Slew Rate VIL VIH VOL VOH IOL 1 IOH1 Min. V Max V Min. V Max. V Max. V Min. Vm A m A

3.3 V LVTTL/

3.3 V LVCMOS 3.3 V LVCMOS Wide Range µA 100 µA 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS Notes: 1. Currents are measured at 85°C junction temperature. 2. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 3. All LVCMOS 3.3 V software macros suppo rt LVCMOS 3.3 V wide range, as specified in the JESD8-B specification. Table 2-15 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial and Industrial Conditions DC I/O Standards Commercial 1 Industrial 2 IIL 3 IIH 4 IIL 3 IIH 4 µA µA µA µA 3.3 V LVTTL / 3.3 V LVCMOS 10 10 15 15

3.3 V LVCMOS Wide Range 10 10 15 15

2.5 V LVCMOS 10 10 15 15

1.8 V LVCMOS 10 10 15 15

1.5 V LVCMOS 10 10 15 15

Notes: 1. Commercial range (–20°C < T A < 70°C) 2. Industrial range (–40°C < T A < 85°C) 3. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 4. IIH is the input leakage current per I/O pin over reco mmended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges.

Summary of I/O Timing Characteristics – Default I/O Software Settings Table 2-16 • Summary of AC Measuring Points Standard Measuring Trip Point (Vtrip) 3.3 V LVTTL / 3.3 V LVCMOS 1.4 V 3.3 V LVCMOS Wide Range 1.4 V 2.5 V LVCMOS 1.2 V 1.8 V LVCMOS 0.90 V 1.5 V LVCMOS 0.75 V Table 2-17 • I/O AC Parameter Definitions Parameter Parameter Definition t DP Data to Pad delay through the Output Buffer tPY Pad to Data delay through the Input Buffer tDOUT Data to Output Buffer delay through the I/O interface tEOUT Enable to Output Buffer Tristate Control delay through the I/O interface tDIN Input Buffer to Data delay through the I/O interface tHZ Enable to Pad delay through the Output Buffer—HIGH to Z tZH Enable to Pad delay through the Output Buffer—Z to HIGH tLZ Enable to Pad delay through the Output Buffer—LOW to Z tZL Enable to Pad delay through the Output Buffer—Z to LOW tZHS Enable to Pad delay through the Output Buffer with delayed enable—Z to HIGH tZLS Enable to Pad delay through the Output Buffer with delayed enable—Z to LOW

ProASIC3 nano DC and Switching Characteristics Table 2-18 • Summary of I/O Timing Characteristics—Software Default Settings (at 35 pF) STD Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst Case VCC = 1.425 V For A3PN060, A3PN125, and A3PN250 I/O Standard Drive Strength (mA) Equivalent Software Default Drive Strength Option1 Slew Rate Capacitive Load (pF) tDOUT (ns) tDP (ns) tDIN (ns) tPY (ns) tPYS (ns) tEOUT (ns) tZL (ns) tZH (ns) tLZ (ns) tHZ (ns)

3.3 V LVTTL /

3.3 V LVCMOS

Notes: 1. The minimum drive strength for any LVCMOS 3.3 V softwa re configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. All LVCMOS 3.3 V software macros suppo rt LVCMOS 3.3 V wide range, as specified in the JESD8-B specification. 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-19 • Summary of I/O Timing Characteristics—Software Default Settings (at 10 pF) STD Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst Case VCC = 1.425 V For A3PN020, A3PN015, and A3PN010 I/O Standard Drive Strength (mA) Equivalent Software Default Drive Strength Option1 Slew Rate Capacitive Load (pF) tDOUT (ns) tDP (ns) tDIN (ns) tPY (ns) tPYS (ns) tEOUT (ns) tZL (ns) tZH (ns) tLZ (ns) tHZ (ns) Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. All LVCMOS 3.3 V software macros suppo rt LVCMOS 3.3 V wide range, as specified in the JESD8-B specification. 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Detailed I/O DC Characteristics Table 2-20 • Input Capacitance Symbol Definition Cond itions Min. Max. Units CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF Table 2-21 • I/O Output Buffer Maximum Resistances 1 Standard Drive Strength RPULL-DOWN ()2 RPULL-UP ()3 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300 4 mA 100 300 6 mA 50 150 8 mA 50 150

3.3 V LVCMOS Wide Range 100 µA Same as equivalent

2.5 V LVCMOS 2 mA 100 200

1.8 V LVCMOS 2 mA 200 225

1.5 V LVCMOS 2 mA 200 224

Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models, located at http://www.microsemi.com/soc/download/ibis/default.aspx. 2. R (PULL-DOWN-MAX) = (VOLspec) / IOLspec 3. R (PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec Table 2-22 • I/O Weak Pull-Up/Pull-Down Resistances Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values VCCI R(WEAK PULL-UP) () R(WEAK PULL-DOWN) () Min. Max. Min. Max.

3.3 V 10 K 45 K 10 K 45 K

3.3 V (wide range I/Os) 10 K 45 K 10 K 45 K

2.5 V 11 K 55 K 12 K 74 K

1.8 V 18 K 70 K 17 K 110 K

1.5 V 19 K 90 K 19 K 140 K

Notes: 1. R (WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN) 2. R (WEAK PULLDOWN-MAX) = (VOLspec) / I(WEAK PULLDOWN-MIN)

ProASIC3 nano DC and Switching Characteristics The length of time an I/O can withstand IOSH/IOSL events depends on the junc tion temperature. The reliability data below is based on a 3.3 V, 8 mA I/O setting, which is the worst case for this type of analysis. For example, at 100°C, the short current condition would have to be sustained for more than six months to cause a reliability concern. The I/O design does not contain any short circuit protection, but such protection would only be needed in extremely prolonged stress conditions. Table 2-23 • I/O Short Currents IOSH/IOSL Drive Strength IOSL (mA)* IOSH (mA)* 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27 4 mA 25 27 6 mA 51 54 8 mA 51 54

3.3 V LVCMOS Wide Range 100 µA Same as equivalent software

2.5 V LVCMOS 2 mA 16 18

1.8 V LVCMOS 2 mA 9 11

1.5 V LVCMOS 2 mA 13 16

Note: *T J = 100°C Table 2-24 • Duration of Short Circuit Event before Failure Temperature Time before Failure –40°C > 20 years –20°C > 20 years 0°C > 20 years 25°C > 20 years 70°C 5 years 85°C 2 years 100°C 6 months

Table 2-25 • Schmitt Trigger Input Hysteresis Hysteresis Voltage Value (Typ.) for Schmitt Mode Input Buffers Input Buffer Configuration Hysteresis Value (typ.)

3.3 V LVTTL / LVCMOS (Schmitt trigger mode) 240 mV

2.5 V LVCMOS (Schmitt trigger mode) 140 mV

1.8 V LVCMOS (Schmitt trigger mode) 80 mV

1.5 V LVCMOS (Schmitt trigger mode) 60 mV

Table 2-26 • I/O Input Rise Time, Fall Time, and Related I/O Reliability Input Buffer Input Rise/Fall Time (min.) Input Rise/F all Time (max.) Reliability LVTTL/LVCMOS (Schmitt trigger disabled) No requirement 10 ns * 20 years (100°C) LVTTL/LVCMOS (Schmitt trigger enabled) No requirement No requirement, but input noise voltage cannot exceed Schmitt hysteresis 20 years (100°C) Note: The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the noise is low, then the rise time and fall time of input buffers can be increased beyond the maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board noise. Microsemi recommends signal integrity evaluation/characterization of the system to ensure that there is no excessive noise coupling into input signals.

ProASIC3 nano DC and Switching Characteristics Single-Ended I/O Characteristics 3.3 V LVTTL / 3.3 V LVCMOS Low-Voltage Transistor–Transistor Logic (LVTTL) is a general-purpose standard (EIA/JESD) for 3.3 V applications. It uses an LVTTL input buffer and push-pull output buffer. Table 2-27 • Minimum and Maximum DC Input and Output Levels

3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH2

Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA3 Max. mA3 µA4 µA4 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100° C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-6 • AC Loading Table 2-28 • 3.3 V LVTTL/LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 03 . 3 1 . 4 1 0 Notes: 1. Measuring point = Vtrip. See Table 2-16 on page 2-17 for a complete table of trip points. 2. Capacitive Load for A3PN060, A3PN125, and A3PN250 is 35 pF. Test Point Test Point Enable PathDatapath 35 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ

Table 2-29 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-30 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics Table 2-31 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-32 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

3.3 V LVCMOS Wide Range

Table 2-33 • Minimum and Maximum DC Input and Output Levels for 3.3 V LVCMOS Wide Range VIL VIH VOL VOH IOL I OH IIL1 IIH2 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. Vm A m A µ A 4 µA4 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 4. Currents are measured at 85°C junction temperature. 5. All LVMCOS 3.3 V software macros support LVCMOS 3.3 V Wide Range, as specified in the JESD8-B specification. 6. Software default selection highlighted in gray.

ProASIC3 nano DC and Switching Characteristics Timing Characteristics Table 2-34 • 3.3 V LVCMOS Wide Range Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Equivalent Software Default Drive Strength Option1 Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Table 2-35 • 3.3 V LVCMOS Wide Range High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Equivalent Software Default Drive Strength Option1 Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. 3. Software default selection highlighted in gray.

ProASIC3 nano DC and Switching Characteristics Table 2-36 • 3.3 V LVCMOS Wide Range Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V Software Default Load at 35 pF for A3PN020, A3PN015, A3PN010 Drive Strength Equivalent Software Default Drive Strength Option1 Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Table 2-37 • 3.3 V LVCMOS Wide Range High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V Software Default Load at 35 pF for A3PN020, A3PN015, A3PN010 Drive Strength Equivalent Software Default Drive Strength Option1 Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. 3. Software default selection highlighted in gray.

ProASIC3 nano DC and Switching Characteristics

2.5 V LVCMOS

Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general- purpose 2.5 V applications. Table 2-38 • Minimum and Maximum DC Input and Output Levels

2.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH2

Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA3 Max. mA3 µA4 µA4 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (1 00°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-7 • AC Loading Table 2-39 • 2.5 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 02 . 5 1 . 2 1 0 Notes: 1. Measuring point = Vtrip. See Table 2-16 on page 2-17 for a complete table of trip points. 2. Capacitive Load for A3PN060, A3PN125, and A3PN250 is 35 pF. Test Point Test Point Enable PathDatapath 35 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ

Table 2-40 • 2.5 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-41 • 2.5 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics Table 2-42 • 2.5 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-43 • 2.5 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

1.8 V LVCMOS

Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standa rd (JESD8-5) used for general- purpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer. Table 2-44 • Minimum and Maximum DC Input and Output Levels

1.8 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH2

Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA3 Max. mA3 µA4 µA4 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-8 • AC Loading Table 2-45 • 1.8 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 01 . 8 0 . 9 1 0 Notes: 1. Measuring point = Vtrip. See Table 2-16 on page 2-17 for a complete table of trip points. 2. Capacitive Load for A3PN060, A3PN125, and A3PN250 is 35 pF. Test Point Test Point Enable PathDatapath 35 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ

ProASIC3 nano DC and Switching Characteristics Timing Characteristics Table 2-46 • 1.8 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-47 • 1.8 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Table 2-48 • 1.8 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-49 • 1.8 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics

1.5 V LVCMOS (JESD8-11)

Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for general- purpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer. Table 2-50 • Minimum and Maximum DC Input and Output Levels

1.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH2

Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA3 Max. mA3 µA4 µA4 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-9 • AC Loading Table 2-51 • 1.5 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 0 1.5 0.75 10 Notes: 1. Measuring point = Vtrip. See Table 2-16 on page 2-17 for a complete table of trip points. 2. Capacitive Load for A3PN060, A3PN125, and A3PN250 is 35 pF. Test Point Test Point Enable PathDatapath 35 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ

Table 2-52 • 1.5 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-53 • 1.5 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Software Default Load at 35 pF for A3PN060, A3PN125, A3PN250 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-54 • 1.5 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-55 • 1.5 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Software Default Load at 10 pF for A3PN020, A3PN015, A3PN010 Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics I/O Register Specifications Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Preset Figure 2-10 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset INBUF INBUF INBUF TRIBUF CLKBUF INBUFINBUFCLKBUF Data Input I/O Register with: Active High Enable Active High Preset Positive-Edge Triggered Data Output Register and Enable Output Register with: Active High Enable Active High Preset Postive-Edge Triggered Pad Out CLK Enable Preset Data_out Data EOUT DOUT Enable CLK DQ DFN1E1P1 PRE DQ DFN1E1P1 PRE DQ DFN1E1P1 PRE D_Enable A B C D E E E E F G H I J L K Y Core Array

Table 2-56 • Parameter Definition and Measuring Nodes Parameter Name Parameter Definition Measuring Nodes (from, to)* tOCLKQ Clock-to-Q of the Output Data Register H, DOUT tOSUD Data Setup Time for the Output Data Register F, H tOHD Data Hold Time for the Output Data Register F, H tOSUE Enable Setup Time for the Output Data Register G, H tOHE Enable Hold Time for the Output Data Register G, H tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register L, DOUT tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H tOECLKQ Clock-to-Q of the Output Enable Register H, EOUT tOESUD Data Setup Time for the Output Enable Register J, H tOEHD Data Hold Time for the Output Enable Register J, H tOESUE Enable Setup Time for the Output Enable Register K, H tOEHE Enable Hold Time for the Output Enable Register K, H tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register I, EOUT tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H tICLKQ Clock-to-Q of the Input Data Register A, E tISUD Data Setup Time for the Input Data Register C, A tIHD Data Hold Time for the Input Data Register C, A tISUE Enable Setup Time for the Input Data Register B, A tIHE Enable Hold Time for the Input Data Register B, A tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A Note: *See Figure 2-10 on page 2-38 for more information.

ProASIC3 nano DC and Switching Characteristics Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Clear Figure 2-11 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear Enable CLK Pad Out CLK Enable CLR Data_out Data Y AA EOUT DOUT Core ArrayDQ DFN1E1C1 E CLR DQ DFN1E1C1 E CLR DQ DFN1E1C1 E CLR D_Enable BB CC DD EE FF GG LL HH JJ KK CLKBUF INBUF INBUF TRIBUF INBUF INBUF CLKBUF INBUF Data Input I/O Register with Active High Enable Active High Clear Positive-Edge Triggered Data Output Register and Enable Output Register with Active High Enable Active High Clear Positive-Edge Triggered

Table 2-57 • Parameter Definition and Measuring Nodes Parameter Name Parameter Definition Measuring Nodes (from, to)* tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT tOSUD Data Setup Time for the Output Data Register FF, HH tOHD Data Hold Time for the Output Data Register FF, HH tOSUE Enable Setup Time for the Output Data Register GG, HH tOHE Enable Hold Time for the Output Data Register GG, HH tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register LL, DOUT tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH tOECLKQ Clock-to-Q of the Output Enable Register HH, EOUT tOESUD Data Setup Time for the Output Enable Register JJ, HH tOEHD Data Hold Time for the Output Enable Register JJ, HH tOESUE Enable Setup Time for the Output Enable Register KK, HH tOEHE Enable Hold Time for the Output Enable Register KK, HH tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH tICLKQ Clock-to-Q of the Input Data Register AA, EE tISUD Data Setup Time for the Input Data Register CC, AA tIHD Data Hold Time for the Input Data Register CC, AA tISUE Enable Setup Time for the Input Data Register BB, AA tIHE Enable Hold Time for the Input Data Register BB, AA tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA Note: *See Figure 2-11 on page 2-40 for more information.

ProASIC3 nano DC and Switching Characteristics Input Register Timing Characteristics Figure 2-12 • Input Register Timing Diagram 50% Preset Clear Out_1 CLK Data Enable tISUE 50% 50% tISUD tIHD 50% 50% tICLKQ 1 0 tIHE tIRECPRE tIREMPRE tIRECCLR tIREMCLRtIWCLR tIWPRE tIPRE2Q tICLR2Q tICKMPWH tICKMPWL 50% 50% 50% 50% 50% 50% 50% 50% Table 2-58 • Input Data Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tICLKQ Clock-to-Q of the Input Data Register 0.24 0.27 0.32 ns tISUD Data Setup Time for the Input Data Register 0.26 0.30 0.35 ns tIHD Data Hold Time for the Input Data Register 0.00 0.00 0.00 ns tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.45 0.52 0.61 ns tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.45 0.52 0.61 ns tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 0.00 0.00 ns tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.22 0.25 0.30 ns tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 0.00 0.00 ns tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.22 0.25 0.30 ns tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.22 0.25 0.30 ns tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.22 0.25 0.30 ns tICKMPWH Clock Minimum Pulse Width HIGH for the Input Data Register 0.36 0.41 0.48 ns tICKMPWL Clock Minimum Pulse Width LOW for the Input Data Register 0.32 0.37 0.43 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Figure 2-13 • Output Register Timing Diagram Preset Clear DOUT CLK Data_out Enable tOSUE 50% 50% tOSUD tOHD 50% 50% tOCLKQ 1 0 tOHE tORECPRE tOREMPRE tORECCLR tOREMCLRtOWCLR tOWPRE tOPRE2Q tOCLR2Q tOCKMPWH tOCKMPWL 50% 50% 50% 50% 50% 50% 50% 50% 50% Table 2-59 • Output Data Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tOCLKQ Clock-to-Q of the Output Data Register 0.59 0.67 0.79 ns tOSUD Data Setup Time for the Output Data Register 0.31 0.36 0.42 ns tOHD Data Hold Time for the Output Data Register 0.00 0.00 0.00 ns tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 0.80 0.91 1.07 ns tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 0.80 0.91 1.07 ns tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 0.00 0.00 ns tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.22 0.25 0.30 ns tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 0.00 0.00 ns tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.22 0.25 0.30 ns tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.22 0.25 0.30 ns tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.22 0.25 0.30 ns tOCKMPWH Clock Minimum Pulse Width HIGH for the Output Data Register 0.36 0.41 0.48 ns tOCKMPWL Clock Minimum Pulse Width LOW for the Output Data Register 0.32 0.37 0.43 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics Output Enable Register Timing Characteristics Figure 2-14 • Output Enable Register Timing Diagram 50% Preset Clear EOUT CLK D_Enable Enable tOESUE 50% 50% tOESUDtOEHD 50% 50% tOECLKQ 1 0 tOEHE tOERECPRE tOEREMPRE tOERECCLR tOEREMCLRtOEWCLR tOEWPRE tOEPRE2Q tOECLR2Q tOECKMPWH tOECKMPWL 50% 50% 50% 50% 50% 50% 50% 50% Table 2-60 • Output Enable Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units t OECLKQ Clock-to-Q of the Output Enable Register 0.44 0.51 0.59 ns tOESUD Data Setup Time for the Output Enable Register 0.31 0.36 0.42 ns tOEHD Data Hold Time for the Output Enable Register 0.00 0.00 0.00 ns tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 0.67 0.76 0.89 ns tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 0.67 0.76 0.89 ns tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 0.00 0.00 ns tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.22 0.25 0.30 ns tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 0.00 0.00 ns tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.22 0.25 0.30 ns tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.22 0.25 0.30 ns tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.22 0.25 0.30 ns tOECKMPWH Clock Minimum Pulse Width HIGH for the Output Enable Register 0.36 0.41 0.48 ns tOECKMPWL Clock Minimum Pulse Width LOW for the Output Enable Register 0.32 0.37 0.43 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Figure 2-15 • Input DDR Timing Model Table 2-61 • Parameter Definitions Parameter Name Parameter Definition Measuring Nodes (from, to) tDDRICLKQ1 Clock-to-Out Out_QR B, D tDDRICLKQ2 Clock-to-Out Out_QF B, E tDDRISUD Data Setup Time of DDR input A, B tDDRIHD Data Hold Time of DDR input A, B tDDRICLR2Q1 Clear-to-Out Out_QR C, D tDDRICLR2Q2 Clear-to-Out Out_QF C, E tDDRIREMCLR Clear Removal C, B tDDRIRECCLR Clear Recovery C, B Input DDR Data CLK CLKBUF INBUF Out_QF (to core) FF2 FF1 INBUF CLR DDR_IN E A B C D Out_QR (to core)

ProASIC3 nano DC and Switching Characteristics Timing Characteristics Figure 2-16 • Input DDR Timing Diagram tDDRICLR2Q2 tDDRIREMCLR tDDRIRECCLR tDDRICLR2Q1 12 3 4 5 6 7 8 9 CLK Data CLR Out_QR Out_QF tDDRICLKQ1 2 4 6 3 5 7 tDDRIHDtDDRISUD tDDRICLKQ2 Table 2-62 • Input DDR Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.27 0.31 0.37 ns tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.39 0.44 0.52 ns tDDRISUD Data Setup for Input DDR (Fall) 0.28 0.32 0.38 ns Data Setup for Input DDR (Rise) 0.25 0.28 0.33 ns tDDRIHD Data Hold for Input DDR (Fall) 0.00 0.00 0.00 ns Data Hold for Input DDR (Rise) 0.00 0.00 0.00 ns t DDRICLR2Q1 Asynchronous Clear-to-Out Out_QR for Input DDR 0.46 0.53 0.62 ns tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 0.57 0.65 0.76 ns tDDRIREMCLR Asynchronous Clear Removal time for Input DDR 0.00 0.00 0.00 ns tDDRIRECCLR Asynchronous Clear Recovery time for Input DDR 0.22 0.25 0.30 ns tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.22 0.25 0.30 ns tDDRICKMPWH Clock Minimum Pulse Width High for Input DDR 0.36 0.41 0.48 ns tDDRICKMPWL Clock Minimum Pulse Width Low for Input DDR 0.32 0.37 0.43 ns FDDRIMAX Maximum Frequency for Input DDR 350.00 350.00 350.00 MHz Note: For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values.

Figure 2-17 • Output DDR Timing Model Table 2-63 • Parameter Definitions Parameter Name Parameter Definition Measuring Nodes (from, to) tDDROCLKQ Clock-to-Out B, E tDDROCLR2Q Asynchronous Clear-to-Out C, E tDDROREMCLR Clear Removal C, B tDDRORECCLR Clear Recovery C, B tDDROSUD1 Data Setup Data_F A, B tDDROSUD2 Data Setup Data_R D, B tDDROHD1 Data Hold Data_F A, B tDDROHD2 Data Hold Data_R D, B Data_F (from core) CLK CLKBUF Out FF2 INBUF CLR DDR_OUT Output DDR FF1 X X X X X X X A B D EC C B OUTBUFData_R (from core)

ProASIC3 nano DC and Switching Characteristics Timing Characteristics Figure 2-18 • Output DDR Timing Diagram 116 91 0 28 3 9 tDDROREMCLR tDDROHD1tDDROREMCLR tDDROHD2tDDROSUD2 tDDROCLKQ tDDRORECCLR CLK Data_R Data_F CLR Out tDDROCLR2Q 71 0 4 Table 2-64 • Output DDR Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tDDROCLKQ Clock-to-Out of DDR for Output DDR 0.70 0.80 0.94 ns tDDROSUD1 Data_F Data Setup for Output DDR 0.38 0.43 0.51 ns tDDROSUD2 Data_R Data Setup for Output DDR 0.38 0.43 0.51 ns tDDROHD1 Data_F Data Hold for Output DDR 0.00 0.00 0.00 ns tDDROHD2 Data_R Data Hold for Output DDR 0.00 0.00 0.00 ns tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 0.80 0.91 1.07 ns tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 0.00 0.00 ns tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.22 0.25 0.30 ns tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.22 0.25 0.30 ns tDDROCKMPWH Clock Minimum Pulse Width HIGH for the Output DDR 0.36 0.41 0.48 ns tDDROCKMPWL Clock Minimum Pulse Width LOW for the Output DDR 0.32 0.37 0.43 ns FDDOMAX Maximum Frequency for the Output DDR 350.00 350.00 350.00 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

VersaTile Specifications as a Combinatorial Module The ProASIC3 library offers all combinations of LUT- 3 combinatorial functions. In this section, timing characteristics are presented for a sample of the library. For more details, refer to the Fusion, IGLOO®/e, and ProASIC3/E Macro Library Guide. Figure 2-19 • Sample of Combinatorial Cells MAJ3 A C BY MUX2 B A S Y AY B B A XOR2 Y NOR2 B A Y B A YOR2 INV A YAND2 B A Y NAND3B A C XOR3 YB A C NAND2

ProASIC3 nano DC and Switching Characteristics Figure 2-20 • Timing Model and Waveforms tPD A B tPD = MAX(tPD(RR), tPD(RF), tPD(FF), tPD(FR)) where edges are applicable for the particular combinatorial cell YNAND2 or Any Combinatorial Logic t PD tPD 50% VCC VCC VCC 50% GNDA, B, C 50% 50% 50% (RR) (RF) GND OUT OUT GND 50% (FF) (FR) tPD tPD

VersaTile Specifications as a Sequential Module The ProASIC3 library offers a wide variety of sequential cells, including flip-flops and latches. Each has a data input and optional enable, clear, or preset. In this section, timing characteristics are presented for a representative sample from the library. For more details, refer to the Fusion, IGLOO/e, and ProASIC3/E Macro Library Guide. Table 2-65 • Combinatorial Cell Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Combinatorial Cell Equation Parameter –2 –1 Std. Units INV Y = !A t PD 0.40 0.46 0.54 ns AND2 Y = A · B t PD 0.47 0.54 0.63 ns NAND2 Y = !(A · B) t PD 0.47 0.54 0.63 ns OR2 Y = A + B t PD 0.49 0.55 0.65 ns NOR2 Y = !(A + B) t PD 0.49 0.55 0.65 ns XOR2 Y = A Bt PD 0.74 0.84 0.99 ns MAJ3 Y = MAJ(A, B, C) t PD 0.70 0.79 0.93 ns XOR3 Y = A  B Ct PD 0.87 1.00 1.17 ns MUX2 Y = A !S + B S t PD 0.51 0.58 0.68 ns AND3 Y = A · B · C t PD 0.56 0.64 0.75 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. Figure 2-21 • Sample of Sequential Cells DQ DFN1 Data CLK Out D Q DFN1C1 Data CLK Out CLR DQ DFI1E1P1 Data CLK Out En PRE D Q DFN1E1 Data CLK Out En

ProASIC3 nano DC and Switching Characteristics Timing Characteristics Figure 2-22 • Timing Model and Waveforms PRE CLR Out CLK Data EN tSUE 50% 50% tSUD tHD 50% 50% tCLKQ tHE tRECPRE tREMPRE tRECCLR tREMCLRtWCLR tWPRE tPRE2Q tCLR2Q tCKMPWH tCKMPWL 50% 50% 50% 50% 50% 50% 50% 50% 50% Table 2-66 • Register Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tCLKQ Clock-to-Q of the Core Register 0.55 0.63 0.74 ns tSUD Data Setup Time for the Core Register 0.43 0.49 0.57 ns tHD Data Hold Time for the Core Register 0.00 0.00 0.00 ns tSUE Enable Setup Time for the Core Register 0.45 0.52 0.61 ns tHE Enable Hold Time for the Core Register 0.00 0.00 0.00 ns tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.40 0.45 0.53 ns tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.40 0.45 0.53 ns tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 0.00 0.00 ns tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.22 0.25 0.30 ns tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 0.00 0.00 ns tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.22 0.25 0.30 ns tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.22 0.25 0.30 ns tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.22 0.25 0.30 ns tCKMPWH Clock Minimum Pulse Width HIGH for the Core Register 0.36 0.41 0.48 ns tCKMPWL Clock Minimum Pulse Width LOW for the Core Register 0.32 0.37 0.43 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

Global Resource Characteristics A3PN250 Clock Tree Topology Clock delays are device-specific. Figure 2-23 is an example of a global tree used for clock routing. The global tree presented in Figure 2-23 is driven by a CCC located on the west side of the A3PN250 device. It is used to drive all D-flip-flops in the device. Figure 2-23 • Example of Global Tree Use in an A3PN250 Device for Clock Routing Central Global Rib VersaTile Rows Global Spine CCC

ProASIC3 nano DC and Switching Characteristics Global Tree Timing Characteristics Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not include I/O input buffer clock delays, as these are I/O standard–dependent, and the clock may be driven and conditioned internally by the CCC module. For more details on clock conditioning capabilities, refer to the "Clock Conditioning Circuits" section on page 2-57. Table 2-67 to Table 2-72 on page 2-56 present minimum and maximum global clock delays within each device. Minimum and maximum delays are measured with minimum and maximum loading. Timing Characteristics Table 2-67 • A3PN010 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. tRCKMPWH Minimum Pulse Width HIGH for Global Clock 0.75 0.85 1.00 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 0.85 0.96 1.13 ns tRCKSW Maximum Skew for Global Clock 0.22 0.26 0.30 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-68 • A3PN015 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. tRCKMPWH Minimum Pulse Width HIGH for Global Clock 0.75 0.85 1.00 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 0.85 0.96 1.13 ns tRCKSW Maximum Skew for Global Clock 0.29 0.33 0.39 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values.

Table 2-69 • A3PN020 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. tRCKMPWH Minimum Pulse Width HIGH for Global Clock 0.75 0.85 1.00 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 0.85 0.96 1.13 ns tRCKSW Maximum Skew for Global Clock 0.29 0.33 0.39 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-70 • A3PN060 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. tRCKMPWH Minimum Pulse Width HIGH for Global Clock 0.75 0.85 1.00 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 0.85 0.96 1.13 ns tRCKSW Maximum Skew for Global Clock 0.23 0.26 0.31 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics Table 2-71 • A3PN125 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. tRCKMPWH Minimum Pulse Width HIGH for Global Clock 0.75 0.85 1.00 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 0.85 0.96 1.13 ns tRCKSW Maximum Skew for Global Clock 0.26 0.30 0.35 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values. Table 2-72 • A3PN250 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. tRCKMPWH Minimum Pulse Width HIGH for Global Clock 0.75 0.85 1.00 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 0.85 0.96 1.13 ns tRCKSW Maximum Skew for Global Clock 0.26 0.30 0.35 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-6 on page 2-5 for derating values.

Clock Conditioning Circuits Timing Characteristics Table 2-73 • ProASIC3 nano CCC/PLL Specification Parameter Minimum Typical Maximum Units Clock Conditioning Circuitry Input Frequency fIN_CCC 1.5 350 MHz Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 350 MHz Delay Increments in Programmable Delay Blocks 1,2 2003 ps Number of Programmable Values in Each Programmable Delay Block Serial Clock (SCLK) for Dynamic PLL 4,5 125 MHz Input Cycle-to-Cycle Jitter (peak magnitude) 1.5 ns Acquisition Time LockControl = 0 300 µs LockControl = 1 6.0 ms Tracking Jitter LockControl = 0 1.6 ns LockControl = 1 0.8 ns Output Duty Cycle 48.5 51.5 % Delay Range in Block: Programmable Delay 1,2 1.25 15.65 ns Delay Range in Block: Programmable Delay 2 1,2 0.025 15.65 ns Delay Range in Block: Fixed Delay 1,2 2.2 ns VCO Output Peak-to-Peak Period Jitter FCCC_OUT

6 Max Peak-to-Peak Jitter Data 6,8,9

50 MHz to 250 MHz 1.00% 3.00% 5.00% 9.00% 250 MHz to 350 MHz 2.50% 4.00% 6.00% 12.00% Notes: 1. This delay is a function of voltage and temperature. See Table 2-6 on page 2-5 for deratings. 2. T J = 25°C, VCC = 1.5 V 3. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available. Refer to the Libero SoC Online Help for more information. 4. Maximum value obtained for a –2 speed-grade device in worst-case commercial conditions. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values. 5. The A3PN010, A3PN015, and A3PN020 devices do not support PLLs. 6. VCO output jitter is calculated as a percentage of the VCO frequency. The jitter (in ps) can be calculated by multiplying the VCO period by the % jitter. The VCO jitter (in ps) applies to CCC_OUT regardless of the output divider settings. For example, if the jitter on VCO is 300 ps, the jitter on CCC_OUT is also 300 ps, regardless of the output divider settings. 7. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to the PLL input clock edge. Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter parameter. 8. Measurements done with LVTTL 3.3 V 8 mA I/O drive strength and high slew rate. VCC/VCCPLL = 1.425 V, VCCI = 3.3 , VQ/PQ/TQ type of packages, 20 pF load. 9. SSOs are outputs that are synchronous to a single clock domain, and have their clock-to-out times within ± 200 ps of each other.

ProASIC3 nano DC and Switching Characteristics Note: Peak-to-peak jitter measurements are defined by Tpeak-to-peak = Tperiod_max – Tperiod_min. Figure 2-24 • Peak-to-Peak Jitter Definition Tperiod_max Tperiod_min Output Signal

Embedded SRAM and FIFO Characteristics SRAM Figure 2-25 • RAM Models ADDRA11 DOUTA8 DOUTA7 DOUTA0 DOUTB8 DOUTB7 DOUTB0 ADDRA10 ADDRA0 DINA8 DINA7 DINA0 WIDTHA1 WIDTHA0 PIPEA WMODEA BLKA WENA CLKA ADDRB11 ADDRB10 ADDRB0 DINB8 DINB7 DINB0 WIDTHB1 WIDTHB0 PIPEB WMODEB BLKB WENB CLKB RAM4K9 RADDR8 RD17 RADDR7 RD16 RADDR0 RD0 WD17 WD16 WD0 WW1 WW0 RW1 RW0 PIPE REN RCLK RAM512X18 WADDR8 WADDR7 WADDR0 WEN WCLK RESETRESET

ProASIC3 nano DC and Switching Characteristics Figure 2-30 • RAM Reset. Applicable to both RAM4K9 and RAM512x18. CLK RESET DOUT|RD Dn tCYC tCKH tCKL tRSTBQ Dm

Table 2-74 • RAM4K9 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tAS Address Setup time 0.25 0.28 0.33 ns tAH Address Hold time 0.00 0.00 0.00 ns tENS REN, WEN Setup time 0.14 0.16 0.19 ns tENH REN, WEN Hold time 0.10 0.11 0.13 ns tBKS BLK Setup time 0.23 0.27 0.31 ns tBKH BLK Hold time 0.02 0.02 0.02 ns tDS Input data (DIN) Setup time 0.18 0.21 0.25 ns tDH Input data (DIN) Hold time 0.00 0.00 0.00 ns tCKQ1 Clock High to New Data Valid on DOUT (output retained, WMODE = 0) 1.79 2.03 2.39 ns Clock High to New Data Valid on DOUT (flow-through, WMODE = 1) 2.36 2.68 3.15 ns tCKQ2 Clock High to New Data Valid on DOUT (pipelined) 0.89 1.02 1.20 ns tC2CWWL

1 Address collision clk-to-clk delay for reliable write after write on same

address; applicable to closing edge 0.33 0.28 0.25 ns tC2CWWH address; applicable to rising edge 0.30 0.26 0.23 ns tC2CRWH

1 Address collision clk-to-clk delay for reliable read access after write on same

address; applicable to opening edge 0.45 0.38 0.34 ns tC2CWRH

1 Address collision clk-to-clk delay for reliable write access after read on same

address; applicable to opening edge 0.49 0.42 0.37 ns tRSTBQ RESET Low to Data Out Low on DOUT (flow through) 0.92 1.05 1.23 ns RESET Low to Data Out Low on DOUT (pipelined) 0.92 1.05 1.23 ns tREMRSTB RESET Removal 0.29 0.33 0.38 ns tRECRSTB RESET Recovery 1.50 1.71 2.01 ns tMPWRSTB RESET Minimum Pulse Width 0.21 0.24 0.29 ns tCYC Clock Cycle time 3.23 3.68 4.32 ns FMAX Maximum Frequency 310 272 231 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-4 for derating values.

ProASIC3 nano DC and Switching Characteristics Table 2-75 • RAM512X18 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tAS Address setup time 0.25 0.28 0.33 ns tAH Address hold time 0.00 0.00 0.00 ns tENS REN, WEN setup time 0.09 0.10 0.12 ns tENH REN, WEN hold time 0.06 0.07 0.08 ns tDS Input data (WD) setup time 0.18 0.21 0.25 ns tDH Input data (WD) hold time 0.00 0.00 0.00 ns tCKQ1 Clock High to new data valid on RD (output retained) 2.16 2.46 2.89 ns tCKQ2 Clock High to new data valid on RD (pipelined) 0.90 1.02 1.20 ns tC2CRWH address; applicable to opening edge 0.50 0.43 0.38 ns tC2CWRH address; applicable to opening edge 0.59 0.50 0.44 ns tRSTBQ RESET LOW to data out LOW on RD (flow-through) 0.92 1.05 1.23 ns RESET LOW to data out LOW on RD (pipelined) 0.92 1.05 1.23 ns tREMRSTB RESET removal 0.29 0.33 0.38 ns tRECRSTB RESET recovery 1.50 1.71 2.01 ns tMPWRSTB RESET minimum pulse width 0.21 0.24 0.29 ns tCYC Clock cycle time 3.23 3.68 4.32 ns FMAX Maximum frequency 310 272 231 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-4 for derating values.

Figure 2-31 • FIFO Model FIFO4K18 RW2 RD17 RW1 RD16 RW0 WW2 WW1 WW0 RD0 ESTOP FSTOP FULL AFULL EMPTY AFVAL11 AEMPTY AFVAL10 AFVAL0 AEVAL11 AEVAL10 AEVAL0 REN RBLK RCLK WEN WBLK WCLK RPIPE WD17 WD16 WD0 RESET

Table 2-76 • FIFO Worst Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description –2 –1 Std. Units tENS REN, WEN Setup Time 1.38 1.57 1.84 ns tENH REN, WEN Hold Time 0.02 0.02 0.02 ns tBKS BLK Setup Time 0.22 0.25 0.30 ns tBKH BLK Hold Time 0.00 0.00 0.00 ns tDS Input Data (WD) Setup Time 0.18 0.21 0.25 ns tDH Input Data (WD) Hold Time 0.00 0.00 0.00 ns tCKQ1 Clock High to New Data Valid on RD (flow-through) 2.36 2.68 3.15 ns tCKQ2 Clock High to New Data Valid on RD (pipelined) 0.89 1.02 1.20 ns tRCKEF RCLK High to Empty Flag Valid 1.72 1.96 2.30 ns tWCKFF WCLK High to Full Flag Valid 1.63 1.86 2.18 ns tCKAF Clock High to Almost Empty/Full Flag Valid 6.19 7.05 8.29 ns tRSTFG RESET LOW to Empty/Full Flag Valid 1.69 1.93 2.27 ns tRSTAF RESET LOW to Almost Empty/Full Flag Valid 6.13 6.98 8.20 ns tRSTBQ RESET Low to Data Out Low on RD (flow-through) 0.92 1.05 1.23 ns RESET Low to Data Out Low on RD (pipelined) 0.92 1.05 1.23 ns t REMRSTB RESET Removal 0.29 0.33 0.38 ns tRECRSTB RESET Recovery 1.50 1.71 2.01 ns tMPWRSTB RESET Minimum Pulse Width 0.21 0.24 0.29 ns tCYC Clock Cycle Time 3.23 3.68 4.32 ns FMAX Maximum Frequency for FIFO 310 272 231 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics Embedded FlashROM Characteristics Timing Characteristics Figure 2-39 • Timing Diagram A0 A1 tSU tHOLD tSU tHOLD tSU tHOLD tCKQ2 tCKQ2 tCKQ2 CLK Address Data D0 D0 D1 Table 2-77 • Embedded FlashROM Access Time Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tSU Address Setup Time 0.53 0.61 0.71 ns tHOLD Address Hold Time 0.00 0.00 0.00 ns tCK2Q Clock to Out 16.23 18.48 21.73 ns FMAX Maximum Clock Frequency 15.00 15.00 15.00 MHz

JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to the corresponding standard selected; refer to the I/O timing characteristics in the "User I/O Characteristics" section on page 2-12 for more details. Timing Characteristics Table 2-78 • JTAG 1532 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description –2 –1 Std. Units tDISU Test Data Input Setup Time 0.53 0.60 0.71 ns tDIHD Test Data Input Hold Time 1.07 1.21 1.42 ns tTMSSU Test Mode Select Setup Time 0.53 0.60 0.71 ns tTMDHD Test Mode Select Hold Time 1.07 1.21 1.42 ns tTCK2Q Clock to Q (data out) 6.39 7.24 8.52 ns tRSTB2Q Reset to Q (data out) 21.31 24.15 28.41 ns FTCKMAX TCK Maximum Frequency 23.00 20.00 17.00 MHz tTRSTREM ResetB Removal Time 0.00 0.00 0.00 ns tTRSTREC ResetB Recovery Time 0.21 0.24 0.28 ns tTRSTMPW ResetB Minimum Pulse TBD TBD TBD ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.

ProASIC3 nano DC and Switching Characteristics

3 – Pin Descriptions and Packaging Supply Pins GND Ground Ground supply voltage to the core, I/O outputs, and I/O logic. GNDQ Ground (quiet) Quiet ground supply voltage to input buffers of I/O banks. Within the package, the GNDQ plane is decoupled from the simultaneous switching noise orig inated from the output buffer ground domain. This minimizes the noise transfer within the package and im proves input signal integrity. GNDQ must always be connected to GND on the board. VCC Core Supply Voltage Supply voltage to the FPGA core, nominally 1.5 V. VCC is required for powering the JTAG state machine in addition to VJTAG. Even when a device is in bypass mode in a JTAG chain of interconnected devices, both VCC and VJTAG must remain powered to allow JTAG signals to pass through the device. VCCIBx I/O Supply Voltage Supply voltage to the bank's I/O output buffers and I/O logic. Bx is the I/O bank number. There are up to eight I/O banks on low power flash devices plus a dedicated VJTAG bank. Each bank can have a separate VCCI connection. All I/Os in a bank will run off the same VCCIBx supply. VCCI can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCI pins tied to GND. VMVx I/O Supply Voltage (quiet) Quiet supply voltage to the input buffers of each I/O bank. x is the bank number. Within the package, the VMV plane biases the input stage of the I/Os in the I/O banks. This minimizes the noise transfer within the package and improves input signal integrity. Each bank must have at least one VMV connection, and no VMV should be left unconnected. All I/Os in a bank run off the same VMVx supply. VMV is used to provide a quiet supply voltage to the input buffers of each I/O bank. VMVx can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VMV pins tied to GND. VMV and VCCI should be at the same voltage within a gi ven I/O bank. Used VMV pins must be connected to the corresponding VCCI pins of the same bank (i.e., VMV0 to VCCIB0, VMV1 to VCCIB1, etc.). VCCPLA/B/C/D/E/F PLL Supply Voltage Supply voltage to analog PLL, nominally 1.5 V. When the PLLs are not used, the plac e-and-route tool automatically disables the unused PLLs to lower power consumption. The user should tie unused V CCPLx and VCOMPLx pins to ground. Microsemi recommends tying VCCPLx to VCC and using proper f iltering circuits to decouple VCC noise from the PLLs. Refer to the PLL Power Supply Decoupling section of the "Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs" chapter of the ProASIC3 nano Device Family User’s Guide for a complete board solution for the PLL analog power supply and ground. There is one VCCPLF pin on ProASIC3 nano devices. VCOMPLA/B/C/D/E/F PLL Ground Ground to analog PLL power supplies. When the PLLs are not used, the place-and-route tool automatically disables the unused PLLs to lower power consumption. The user should tie unused VCCPLx and VCOMPLx pins to ground. There is one VCOMPLF pin on ProASIC3 nano devices. VJTAG JTAG Supply Voltage Low power flash devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). Isol ating the JTAG power supply in a separate I/O bank

Pin Descriptions and Packaging gives greater flexibility in supply selection and si mplifies power supply and PCB design. If the JTAG interface is neither used nor planned for use, the VJTAG pin together with the TRST pin could be tied to GND. It should be noted that VCC is required to be powered for JTAG operation; VJTAG alone is insufficient. If a device is in a JTAG chain of interconnected boards, the board containing the device can be powered down, provided both VJTAG and VCC to the part remain powered; otherwise, JTAG signals will not be able to transition the device, even in bypass mode. Microsemi recommends that VPUMP and VJTAG pow er supplies be kept separate with independent filtering capacitors rather than supplying them from a common rail. VPUMP Programming Supply Voltage ProASIC3 devices support single-voltage ISP of the configuration flash and FlashROM. For programming, VPUMP should be 3.3 V nominal. Duri ng normal device operation, VPUMP can be left floating or can be tied (pulled up) to any voltage between 0 V and the VPUMP maximum. Programming power supply voltage (VPUMP) range is listed in the datasheet. When the VPUMP pin is tied to ground, it will shut off the charge pump circuitry, resulting in no sources of oscillation from the charge pump circuitry. For proper programming, 0.01 µF and 0.33 µF capacitors (both rated at 16 V) are to be connected in parallel across VPUMP and GND, and positioned as close to the FPGA pins as possible. Microsemi recommends that VPUMP and VJTAG pow er supplies be kept separate with independent filtering capacitors rather than supplying them from a common rail. User Pins I/O User Input/Output The I/O pin functions as an input, output, tristate, or bidirectional buffer. Input and output signal levels are compatible with the I/O standard selected. During programming, I/Os become tristated and weakly pulled up to VCCI. With VCCI, VMV, and VCC supplies continuously powered up, when the device transitions from programming to operating mode, the I/Os are instantly configured to the desired user configuration. Unused I/Os are configured as follows:

• Output buffer is disabled (with tristate value of high impedance)
• Input buffer is disabled (with tristate value of high impedance)
• Weak pull-up is programmed GL Globals GL I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct access to the global network (spines). Additionally, the global I/Os can be used as regular I/Os, since they have identical capabilities. Unused GL pins are configured as inputs with pull-up resistors. See more detailed descriptions of global I/O connectivity in the "Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs" chapter of the ProASIC3 nano Device Family User’s Guide. All inputs labeled GC/GF are direct inputs into the quadr ant clocks. For example, if GAA0 is used for an input, GAA1 and GAA2 are no longer available fo r input to the quadrant globals. All inputs labeled GC/GF are direct inputs into the ch ip-level globals, and the rest are connected to the quadrant globals. The inputs to the global network are multiplexed, and only one input can be used as a global input. Refer to the I/O Structure chapter of the ProASIC3 nano Device Family User’s Guide for an explanation of the naming of global pins.

Low power flash devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). VC C must also be powered for the JTAG state machine to operate, even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the part must be supplied to allow JTAG signals to transition the device. Isolating the JTAG power supply in a separate I/O bank gives greater flexibility in s upply selection and simplifies power supply and PCB design. If the JTAG interface is neither used nor planned for use, the VJTAG pin together with the TRST pin could be tied to GND. TCK Test Clock Test clock input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an internal pull- up/-down resistor. If JTAG is not used, Microsemi recommends tying off TCK to GND through a resistor placed close to the FPGA pin. This prevents JTAG operation in case TMS enters an undesired state. Note that to operate at all VJTAG voltages, 500 to 1 k will satisfy the requirements. Refer to Table 3-1 for more information. TDI Test Data Input Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal weak pull-up resistor on the TDI pin. TDO Test Data Output Serial output for JTAG boundary scan, ISP , and UJTAG usage. TMS Test Mode Select The TMS pin controls the use of the IEEE 1532 boundary scan pins (TCK, TDI, TDO, TRST). There is an internal weak pull-up resistor on the TMS pin. TRST Boundary Scan Reset Pin The TRST pin functions as an active-low input to asynchronously initialize (or reset) the boundary scan circuitry. There is an internal weak pull-up resistor on the TRST pin. If JTAG is not used, an external pull- down resistor could be included to ensure the test access port (TAP) is held in reset mode. The resistor values must be chosen from Table 3-1 and must satisfy the parallel re sistance value requirement. The values in Table 3-1 correspond to the resistor recommended when a single device is used, and the equivalent parallel resistor when multiple devices are connected via a JTAG chain. In critical applications, an upset in the JTAG circui t could allow entrance to an undesired JTAG state. In such cases, Microsemi recommends tying off TRST to GND through a resistor placed close to the FPGA pin. Note that to operate at all VJTAG voltages, 500 W to 1 kW will satisfy the requirements. Table 3-1 • Recommended Tie-Off Values for the TCK and TRST Pins VJTAG Tie-Off Resistance VJTAG at 3.3 V 200  to 1 k VJTAG at 2.5 V 200  to 1 k VJTAG at 1.8 V 500  to 1 k VJTAG at 1.5 V 500  to 1 k Notes: 1. Equivalent parallel resistance if more than one device is on the JTAG chain 2. The TCK pin can be pulled up/down. 3. The TRST pin is pulled down.

Pin Descriptions and Packaging Special Function Pins NC No Connect This pin is not connected to circuitry within the device. These pins can be driven to any voltage or can be left floating with no effect on the operation of the device. DC Do Not Connect This pin should not be connected to any signals on the PCB. These pins should be left unconnected. Packaging Semiconductor technology is constantly shrinking in size while growing in capability and functional integration. To enable next-generation silicon technologies, semiconductor packages have also evolved to provide improved performance and flexibility. Microsemi consistently delivers packages that provide the necessary mechanical and environmental protection to ensure consistent reliability an d performance. Microsemi IC packaging technology efficiently supports high-density FPGAs with large-pin-count Ball Grid Arrays (BGAs), but is also flexible enough to accommodate stringent form factor requirements for Chip Scale Packaging (CSP). In addition, Microsemi offers a variety of packages designed to meet your most demanding application and economic requirements for today's embedded and mobile systems. Related Documents User’s Guides ProASIC nano Device Family User’s Guide http://www.microsemi.com/soc/documents/PA3_nano_UG.pdf Packaging The following documents provide packaging information and device selection for low power flash devices. Product Catalog http://www.microsemi.com/soc/documents/ProdCat_PIB.pdf Lists devices currently recommended for new designs and the packages available for each member of the family. Use this document or the datasheet tables to determine the best package for your design, and which package drawing to use. Package Mechanical Drawings http://www.microsemi.com/soc/documents/PckgMechDrwngs.pdf This document contains the package mechanical dr awings for all packages currently or previously supplied by Microsemi. Use the bookmarks to navigate to the package mechanical drawings. Additional packaging materials: http://www.microsemi.com/soc/products/solutions/package/docs.aspx.

4 – Package Pin Assignments 48-Pin QFN Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Notes: 1. This is the bottom view of the package. 2. The die attach paddle of the package is tied to ground (GND). Pin 1

1 GEC0/IO37RSB1

2 IO36RSB1

3 GEA0/IO34RSB1

4 IO22RSB1

7 IO24RSB1

8 IO33RSB1

9 IO26RSB1

10 IO32RSB1

11 IO27RSB1

12 IO29RSB1

13 IO30RSB1

14 IO31RSB1

15 IO28RSB1

16 IO25RSB1

17 IO23RSB1

18 VCC

19 VCCIB1

20 IO17RSB1

21 IO14RSB1

22 TCK

23 TDI

24 TMS

25 VPUMP

26 TDO

27 TRST

28 VJTAG

29 IO11RSB0

30 IO10RSB0

31 IO09RSB0

32 IO08RSB0

33 VCCIB0

34 GND

35 VCC

36 IO07RSB0

37 IO06RSB0

38 GDA0/IO05RSB0

39 IO03RSB0

40 GDC0/IO01RSB0

41 IO12RSB1

42 IO13RSB1

43 IO15RSB1

44 IO16RSB1

45 IO18RSB1

46 IO19RSB1

47 IO20RSB1

48 IO21RSB1

1 IO82RSB1

2 GEC0/IO73RSB1

3 GEA0/IO72RSB1

4 GEB0/IO71RSB1

6 VCCIB1

7 IO68RSB1

8 IO67RSB1

9 IO66RSB1

10 IO65RSB1

11 IO64RSB1

12 IO62RSB1

13 IO61RSB1

14 IO60RSB1

15 IO57RSB1

16 IO55RSB1

17 IO53RSB1

20 IO46RSB1

21 IO42RSB1

29 IO38RSB0

30 GDB0/IO34RSB0

31 GDA0/IO33RSB0

32 GDC0/IO32RSB0

36 IO25RSB0

37 IO24RSB0

38 IO22RSB0

39 IO20RSB0

40 IO18RSB0

41 IO16RSB0

42 IO14RSB0

43 IO10RSB0

44 IO08RSB0

45 IO06RSB0

46 IO04RSB0

47 IO02RSB0

48 IO00RSB0

For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Notes: 1. This is the bottom view of the package. 2. The die attach paddle of the package is tied to ground (GND). Pin A1 Mark

Pin Number A3PN015 Function

1 IO60RSB2

2 IO54RSB2

3 IO52RSB2

4 IO50RSB2

5 IO49RSB2

6 GEC0/IO48RSB2

7 GEA0/IO47RSB2

10 VCCIB2

11 IO46RSB2

12 IO45RSB2

13 IO44RSB2

14 IO43RSB2

15 IO42RSB2

16 IO41RSB2

17 IO40RSB2

18 IO39RSB1

19 IO37RSB1

20 IO35RSB1

21 IO33RSB1

22 IO31RSB1

23 IO30RSB1

24 VCC

25 GND

26 VCCIB1

27 IO27RSB1

28 IO25RSB1

29 IO23RSB1

30 IO21RSB1

31 IO19RSB1

32 TCK

33 TDI

34 TMS

35 VPUMP

36 TDO

37 TRST

38 VJTAG

39 IO17RSB0

40 IO16RSB0

41 GDA0/IO15RSB0

42 GDC0/IO14RSB0

43 IO13RSB0

44 VCCIB0

45 GND

46 VCC

47 IO12RSB0

48 IO11RSB0

49 IO09RSB0

50 IO05RSB0

51 IO00RSB0

52 IO07RSB0

53 IO03RSB0

54 IO18RSB1

55 IO20RSB1

56 IO22RSB1

57 IO24RSB1

58 IO28RSB1

60 GND

62 IO32RSB1

63 IO34RSB1

64 IO36RSB1

65 IO61RSB2

66 IO58RSB2

67 IO56RSB2

68 IO63RSB2

Pin Number A3PN015 Function

Pin Number A3PN030Z Function

2 IO80RSB1

3 IO78RSB1

4 IO76RSB1

5 GEC0/IO73RSB1

6 GEA0/IO72RSB1

7 GEB0/IO71RSB1

10 VCCIB1

11 IO68RSB1

12 IO67RSB1

13 IO66RSB1

14 IO65RSB1

15 IO64RSB1

16 IO63RSB1

17 IO62RSB1

18 IO60RSB1

19 IO58RSB1

20 IO56RSB1

21 IO54RSB1

22 IO52RSB1

23 IO51RSB1

27 IO50RSB1

28 IO48RSB1

29 IO46RSB1

30 IO44RSB1

31 IO42RSB1

39 IO40RSB0

40 IO37RSB0

41 GDB0/IO34RSB0

42 GDA0/IO33RSB0

43 GDC0/IO32RSB0

47 IO31RSB0

48 IO29RSB0

49 IO28RSB0

50 IO27RSB0

51 IO25RSB0

52 IO24RSB0

53 IO22RSB0

54 IO21RSB0

55 IO19RSB0

56 IO17RSB0

57 IO15RSB0

58 IO14RSB0

59 VCCIB0

61 VCC

62 IO12RSB0

63 IO10RSB0

64 IO08RSB0

65 IO06RSB0

66 IO04RSB0

67 IO02RSB0

68 IO00RSB0

Pin Number A3PN030Z Function

For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Note: This is the top view of the package. 100

2 IO82RSB1

3 IO81RSB1

4 IO80RSB1

5 IO79RSB1

6 IO78RSB1

7 IO77RSB1

8 IO76RSB1

10 IO75RSB1

11 IO74RSB1

12 GEC0/IO73RSB1

13 GEA0/IO72RSB1

14 GEB0/IO71RSB1

15 IO70RSB1

16 IO69RSB1

17 VCC

18 VCCIB1

19 IO68RSB1

20 IO67RSB1

21 IO66RSB1

22 IO65RSB1

23 IO64RSB1

24 IO63RSB1

25 IO62RSB1

26 IO61RSB1

27 IO60RSB1

28 IO59RSB1

29 IO58RSB1

30 IO57RSB1

31 IO56RSB1

32 IO55RSB1

33 IO54RSB1

34 IO53RSB1

35 IO52RSB1

36 IO51RSB1

37 VCC

38 GND

39 VCCIB1

40 IO49RSB1

41 IO47RSB1

42 IO46RSB1

43 IO45RSB1

44 IO44RSB1

45 IO43RSB1

46 IO42RSB1

47 TCK

48 TDI

49 TMS

51 GND

52 VPUMP

54 TDO

55 TRST

56 VJTAG

57 IO41RSB0

58 IO40RSB0

59 IO39RSB0

60 IO38RSB0

61 IO37RSB0

62 IO36RSB0

63 GDB0/IO34RSB0

64 GDA0/IO33RSB0

65 GDC0/IO32RSB0

66 VCCIB0

67 GND

68 VCC

69 IO31RSB0

70 IO30RSB0

71 IO29RSB0

72 IO28RSB0

73 IO27RSB0

74 IO26RSB0

75 IO25RSB0

76 IO24RSB0

77 IO23RSB0

78 IO22RSB0

79 IO21RSB0

80 IO20RSB0

81 IO19RSB0

82 IO18RSB0

83 IO17RSB0

84 IO16RSB0

85 IO15RSB0

86 IO14RSB0

87 VCCIB0

88 GND

89 VCC

90 IO12RSB0

91 IO10RSB0

92 IO08RSB0

93 IO07RSB0

94 IO06RSB0

95 IO05RSB0

96 IO04RSB0

97 IO03RSB0

98 IO02RSB0

99 IO01RSB0

100 IO00RSB0

2 GAA2/IO51RSB1

3 IO52RSB1

4 GAB2/IO53RSB1

5 IO95RSB1

6 GAC2/IO94RSB1

7 IO93RSB1

8 IO92RSB1

10 GFB1/IO87RSB1

11 GFB0/IO86RSB1

12 VCOMPLF

13 GFA0/IO85RSB1

14 VCCPLF

15 GFA1/IO84RSB1

16 GFA2/IO83RSB1

19 GEC1/IO77RSB1

20 GEB1/IO75RSB1

21 GEB0/IO74RSB1

22 GEA1/IO73RSB1

23 GEA0/IO72RSB1

24 VMV1

25 GNDQ

26 GEA2/IO71RSB1

27 GEB2/IO70RSB1

28 GEC2/IO69RSB1

29 IO68RSB1

30 IO67RSB1

31 IO66RSB1

32 IO65RSB1

33 IO64RSB1

34 IO63RSB1

35 IO62RSB1

36 IO61RSB1

40 IO60RSB1

41 IO59RSB1

42 IO58RSB1

43 IO57RSB1

44 GDC2/IO56RSB1

45 GDB2/IO55RSB1

46 GDA2/IO54RSB1

50 VMV1

57 GDA1/IO49RSB0

58 GDC0/IO46RSB0

59 GDC1/IO45RSB0

60 GCC2/IO43RSB0

61 GCB2/IO42RSB0

62 GCA0/IO40RSB0

63 GCA1/IO39RSB0

64 GCC0/IO36RSB0

65 GCC1/IO35RSB0

70 GBC2/IO29RSB0

71 GBB2/IO27RSB0

72 IO26RSB0

73 GBA2/IO25RSB0

74 VMV0

75 GNDQ

76 GBA1/IO24RSB0

77 GBA0/IO23RSB0

78 GBB1/IO22RSB0

79 GBB0/IO21RSB0

80 GBC1/IO20RSB0

81 GBC0/IO19RSB0

84 IO15RSB0

85 IO13RSB0

86 IO11RSB0

90 IO10RSB0

91 IO09RSB0

93 GAC1/IO07RSB0

94 GAC0/IO06RSB0

95 GAB1/IO05RSB0

96 GAB0/IO04RSB0

97 GAA1/IO03RSB0

98 GAA0/IO02RSB0

2 GAA2/IO67RSB1

3 IO68RSB1

4 GAB2/IO69RSB1

5 IO132RSB1

6 GAC2/IO131RSB1

7 IO130RSB1

8 IO129RSB1

10 GFB1/IO124RSB1

11 GFB0/IO123RSB1

13 GFA0/IO122RSB1

15 GFA1/IO121RSB1

16 GFA2/IO120RSB1

19 GEC0/IO111RSB1

20 GEB1/IO110RSB1

21 GEB0/IO109RSB1

22 GEA1/IO108RSB1

23 GEA0/IO107RSB1

26 GEA2/IO106RSB1

27 GEB2/IO105RSB1

28 GEC2/IO104RSB1

29 IO102RSB1

30 IO100RSB1

31 IO99RSB1

32 IO97RSB1

33 IO96RSB1

34 IO95RSB1

35 IO94RSB1

36 IO93RSB1

40 IO87RSB1

41 IO84RSB1

42 IO81RSB1

43 IO75RSB1

44 GDC2/IO72RSB1

45 GDB2/IO71RSB1

46 GDA2/IO70RSB1

57 GDA1/IO65RSB0

58 GDC0/IO62RSB0

59 GDC1/IO61RSB0

60 GCC2/IO59RSB0

61 GCB2/IO58RSB0

62 GCA0/IO56RSB0

63 GCA1/IO55RSB0

64 GCC0/IO52RSB0

65 GCC1/IO51RSB0

69 IO47RSB0

70 GBC2/IO45RSB0

71 GBB2/IO43RSB0

72 IO42RSB0

73 GBA2/IO41RSB0

76 GBA1/IO40RSB0

77 GBA0/IO39RSB0

78 GBB1/IO38RSB0

79 GBB0/IO37RSB0

80 GBC1/IO36RSB0

81 GBC0/IO35RSB0

82 IO32RSB0

83 IO28RSB0

84 IO25RSB0

85 IO22RSB0

86 IO19RSB0

90 IO15RSB0

91 IO13RSB0

92 IO11RSB0

93 IO09RSB0

94 IO07RSB0

95 GAC1/IO05RSB0

96 GAC0/IO04RSB0

97 GAB1/IO03RSB0

98 GAB0/IO02RSB0

99 GAA1/IO01RSB0

100 GAA0/IO00RSB0

Pin Number A3PN250 Function 1G N D

2 GAA2/IO67RSB3

3 IO66RSB3

4 GAB2/IO65RSB3

5 IO64RSB3

6 GAC2/IO63RSB3

7 IO62RSB3

8 IO61RSB3

10 GFB1/IO60RSB3

11 GFB0/IO59RSB3

13 GFA0/IO57RSB3

15 GFA1/IO58RSB3

16 GFA2/IO56RSB3

18 VCCIB3

19 GFC2/IO55RSB3

20 GEC1/IO54RSB3

21 GEC0/IO53RSB3

22 GEA1/IO52RSB3

23 GEA0/IO51RSB3

24 VMV3

26 GEA2/IO50RSB2

27 GEB2/IO49RSB2

28 GEC2/IO48RSB2

29 IO47RSB2

30 IO46RSB2

31 IO45RSB2

32 IO44RSB2

33 IO43RSB2

34 IO42RSB2

35 IO41RSB2

36 IO40RSB2

39 VCCIB2

40 IO39RSB2

41 IO38RSB2

42 IO37RSB2

43 GDC2/IO36RSB2

44 GDB2/IO35RSB2

45 GDA2/IO34RSB2

46 GNDQ

50 VMV2

57 GDA1/IO33RSB1

58 GDC0/IO32RSB1

59 GDC1/IO31RSB1

60 IO30RSB1

61 GCB2/IO29RSB1

62 GCA1/IO27RSB1

63 GCA0/IO28RSB1

64 GCC0/IO26RSB1

65 GCC1/IO25RSB1

66 VCCIB1

69 IO24RSB1

70 GBC2/IO23RSB1

71 GBB2/IO22RSB1

72 IO21RSB1

Pin Number A3PN250 Function

73 GBA2/IO20RSB1

74 VMV1

76 GBA1/IO19RSB0

77 GBA0/IO18RSB0

78 GBB1/IO17RSB0

79 GBB0/IO16RSB0

80 GBC1/IO15RSB0

81 GBC0/IO14RSB0

82 IO13RSB0

83 IO12RSB0

84 IO11RSB0

85 IO10RSB0

86 IO09RSB0

90 IO08RSB0

91 IO07RSB0

92 IO06RSB0

93 GAC1/IO05RSB0

94 GAC0/IO04RSB0

95 GAB1/IO03RSB0

96 GAB0/IO02RSB0

97 GAA1/IO01RSB0

98 GAA0/IO00RSB0

99 GNDQ

100 VMV0

Pin Number A3PN250 Function

Pin Number A3PN250Z Function 1G N D Pin Number A3PN250Z Function Pin Number A3PN250Z Function

5 – Datasheet Information List of Changes The following table lists critical changes that were made in each revision of the ProASIC3 nano datasheet. Revision Changes Page Revision 11 (January 2013) The "ProASIC3 nano Ordering Information" section has been updated to mention "Y" as "Blank" mentioning "Device Does Not Include License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio" (SAR 43219). 1-III Added a Note stating "VMV pins must be connected to the corresponding VCCI pins. See the "VMVx I/O Supply Voltage (quiet)" section on page 3-1 for further information. " to Table 2-1 • Absolute Maximum Ratings (SAR 38326). 2-1 Added a note to Table 2-2 · Recommended Operating Conditions1, 2 (SAR 43646): The programming temperature range supported is Tambient = 0°C to 85°C. 2-2 The note in Table 2-73 • ProASIC3 nano CCC/PLL Specification referring the reader to SmartGen was revised to refer instead to the online help associated with the core (SAR 42570). 2-57 Figure 2-32 • FIFO Read and Figure 2-33 • FIFO Write are new (SAR 34847). 2-66 Libero Integrated Design Envi ronment (IDE) was changed to Libero System-on-Chip (SoC) throughout the document (SAR 40288). Live at Power-Up (LAPU) has been replaced with ’Instant On’. NA Revision 10 (September 2012) The "Security" section was modified to clarify t hat Microsemi does not support read- back of programmed data. 1-1 Revision 9 (March 2012) The "In-System Programming (ISP) and Security" section and "Security" section were revised to clarify that although no existi ng security measures can give an absolute guarantee, Microsemi FPGAs implement the be st security available in the industry (SAR 34668). I, 1-1 Notes indicating that A3P015 is not recommended for new designs have been added (SAR 36761). Notes indicating that nano-Z devices are not recommended for use in new designs have been added. The "Devices Not Recommended For New Designs" section is new (SAR 36702). I-IV The Y security option and Licensed DPA Logo were added to the "ProASIC3 nano Ordering Information" section . The trademarked Licensed DPA Logo identifies that a product is covered by a DPA counter-measur es license from Cryptography Research (SAR 34726). III Corrected the Commercial Temperature range to reflect a range of 0°C to 70°C instead of –20°C to 70°C in the "ProASIC3 nano Ordering Information", "Temperature Grade Offerings" , and the "Speed Grade and Temperature Grade Matrix" sections (SAR 37097). III-IV The following sentence was removed from the "Advanced Architecture" section : "In addition, extensive on-chip programming circuitry enables rapid, single-voltage (3.3 V) programming of IGLOO nano devices via an IEEE 1532 JTAG interface" (SAR 34688). 1-3 The "Specifying I/O States During Programming" section is new (SAR 34698). 1-7

(continued) The reference to guidelines for global spines and VersaTile rows, given in the "Global Clock Contribution—PCLOCK" section , was corrected to t he "Spine Architecture" section of the Global Re sources chap ter in the IProASIC3 nano FPGA Fabric User's Guide (SAR 34736). 2-9 Figure 2-3 has been modified for the DIN waveform; the Rise and Fall time label has been changed to tDIN (37114). 2-13 The notes regarding dr ive strength in the "Summary of I/O Timing Characteristics – Default I/O Software Settings" section and "3.3 V LVCMOS Wide Range" section tables were revised for clarification. They now state that the minimum drive strength for the default software configuration when run in wide range is ±100 µA. The drive strength displayed in software is supported in normal range only. For a detailed I/V curve, refer to the IBIS models (SAR 34759). 2-17, 2-25 The AC Loading figures in the "Single-Ended I/O Characteristics" section were updated to match tables in the "Summary of I/O Timing C haracteristics – Default I/O Software Settings" section (SAR 34888). 2-22 Added values for minimum pulse width and removed the FRMAX row from Table 2-67 through Table 2-72 in the "Global Tree Timing Characteristics" section . Use the software to determine the FRMAX for the device you are using (SAR 36956). 2-54 through 2-56 Table 2-73 • ProASIC3 nano CCC/PLL Specification was updated. A note was added indicating that when the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the sp ecified delay increments are available (SAR 34823). 2-57 The port names in the SRAM "Timing Waveforms", SRAM "Timing Characteristics" tables, Figure 2-34 • FIFO Reset, and the FIFO "Timing Characteristics" tables were revised to ensure consistency with the software names (SAR 35743). Reference was made to a new application note, Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and FPGA s, which covers these cases in detail (SAR 34871). 2-60, 2-63, 2-67, 2-69 The "Pin Descriptions and Packaging" chapter has been added (SAR 34772). 3-1 July 2010 The versioning system for datasheets has been changed. Datasheets are assigned a revision number that increments each time the datasheet is revised. The "ProASIC3 nano Device Status" table on page II indicates the status for each device in the device family. N/A Revision 8 (April 2010) References to differential inputs were re moved from the datasheet, since ProASIC3 nano devices do not support differential inputs (SAR 21449). N/A The "ProASIC3 nano Device Status" table is new. II The JTAG DC voltage was revised in Table 2-2 • Recommended Operating Conditions 1, 2 (SAR 24052). The maximum value for VPUMP programming voltage (operation mode) was changed from 3.45 V to 3.6 V (SAR 25220). 2-2 The highest temperature in Table 2-6 • Temperature and Voltage Derating Factors for Timing Delays was changed to 100ºC. 2-5 The typical value for A3PN010 was revised in Table 2-7 • Quiescent Supply Current Characteristics. The note was revised to remove the statement that values do not include I/O static contribution. 2-6 Revision Changes Page

(continued) The following tables were updated with available information: Table 2-8 · Summary of I/O Input Buffer Power (Per Pin) – Default I/O Software Settings; Table 2-9 · Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1 ; Table 2-10 • Different Components Contributing to Dynamic Power Consumption in ProASIC3 nano Devices ; Table 2-14 • Summary of Maximum and Minimum DC Input and Output Levels ; Table 2-18 • Summary of I/O Timing Characteristics—Software Default Settings (at 35 pF) ; Table 2-19 • Summary of I/O Timing Characteristics—Softwar e Default Settings (at 10 pF) 2-6 through 2-18 Table 2-22 • I/O Weak Pull-Up/Pull-Down Resistances was revised to add wide range data and correct the formulas in the table notes (SAR 21348). 2-19 The text introducing Table 2-24 • Duration of Short Circuit Event before Failure was revised to state six months at 100° inst ead of three months at 110° for reliability concerns. The row for 110° was removed from the table. 2-20 Table 2-26 • I/O Input Rise Time, Fall Time, and Related I/O Reliability was revised to give values with Schmitt trigger disabled and enabled (SAR 24634). The temperature for reliability was changed to 100ºC. 2-21 Table 2-33 • Minimum and Maximum DC Input and Output Levels for 3.3 V LVCMOS Wide Range and the timing tables in the "Single-Ended I/O Characteristics" section were updated with available information. The timing tables for 3.3 V LVCMOS wide range are new. 2-22 The following sentence was deleted from the "2.5 V LVCMOS" section: "It uses a 5 V– tolerant input buffer and push-pull output buffer." 2-30 Values for t DDRISUD and F DDRIMAX were updated in Table 2-62 • Input DDR Propagation Delays . Values for F DDOMAX were added to Table 2-64 • Output DDR Propagation Delays (SAR 23919). 2-46, 2-48 Table 2-67 • A3PN010 Global Resource through Table 2-70 • A3PN060 Global Resource were updated with available information. 2-54 through 2-55 Table 2-73 • ProASIC3 nano CCC/PLL Specification was revised (SAR 79390). 2-57 Revision Changes Page

Revision 7 (Jan 2010) Product Brief Advance v0.7 All product tables and pin tables were updated to show clearly that A3PN030 is available only in the Z feature at this time, as A3PN030Z. The nano-Z feature grade devices are designated with a Z at the end of the part number. N/A Packaging Advance v0.6 The "68-Pin QFN" and "100-Pin VQFP" pin tables for A3PN030 were removed. Only the Z grade for A3PN030 is available at this time. N/A Revision 6 (Aug 2009) Product Brief Advance v0.6 Packaging Advance v0.5 The note for A3PN030 in the "ProASIC3 nano Devices" table was revised. It states A3PN030 is available in the Z feature grade only. I The "68-Pin QFN" pin table for A3PN030 is new. 3-7 The "48-Pin QFN", "68-Pin QFN", and "100-Pin VQFP" pin tables for A3PN030Z are new. 4-3, 4-7, 4-9 The "100-Pin VQFP" pin table for A3PN060Z is new. 4-11 The "100-Pin VQFP" pin table for A3PN125Z is new 4-13 The "100-Pin VQFP" pin table for A3PN250Z is new. 4-15 Revision 5 (Mar 2009) Product Brief Advance v0.5 All references to speed grade –F were removed from this document. N/A The"I/Os with Advanced I/O Standards" section was revised to add definitions of hot-swap and cold-sparing. 1-7 Revision 4 (Feb 2009) Packaging Advance v0.4 The "100-Pin VQFP" pin table for A3PN030 is new. 3-10 Revision 3 (Feb 2009) Packaging Advance v0.3 The "100-Pin QFN" section was removed. N/A Revision 2 (Nov 2008) Product Brief Advance v0.4 The "ProASIC3 nano Devices" table was revised to change the maximum user I/Os for A3PN020 and A3PN030. The following table note was removed: "Six chip (main) and three quadrant global networks are available for A3PN060 and above." I The QN100 package was removed for all devices. N/A The "Device Marking" section is new. III Revision 1 (Oct 2008) Product Brief Advance v0.3 The A3PN030 device was added to product tables and replaces A3P030 entries that were formerly in the tables. I to IV The "Wide Range I/O Support" section is new. 1-7 The "I/Os Per Package" table was updated to add the following information to table note 4: "For nano devices, the VQ100 package is offered in both leaded and RoHS-compliant versions. All other packages are RoHS-compliant only." II The "ProASIC3 nano Products Available in the Z Feature Grade" section was updated to remove QN100 for A3PN250. IV The "General Description" section was updated to give correct information about number of gates and dual-port RAM for ProASIC3 nano devices. 1-1

Revision 1 (cont’d) The device architecture figures, Figure 1-3 • ProASIC3 nano Device Architecture Overview with Two I/O Banks (A3PN060 and A3PN125) through Figure 1-4 • ProASIC3 nano Device Architecture Overview with Four I/O Banks (A3PN250) , were revised. Figure 1-1 • ProASIC3 Device Architecture Overview with Two I/O Banks and No RAM (A3PN010 and A3PN030) is new. 1-3 through 1-4 The "PLL and CCC" section was revised to include information about CCC-GLs in A3PN020 and smaller devices. 1-6 DC and Switching Characteristics Advance v0.2 Table 2-2 • Recommended Operating Conditions 1, 2 was revised to add VMV to the VCCI row. The following table note was added: "VMV pins must be connected to the corresponding VCCI pins." 2-2 The values in Table 2-7 • Quiescent Supply Current Characteristics were revised for A3PN010, A3PN015, and A3PN020. 2-6 A table note, "All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range, as specified in the JESD 8-B specification," was added to Table 2-14 • Summary of Maximum and Minimum DC Input and Output Levels , Table 2-18 • Summary of I/O Timing Characteristics—S oftware Default Se ttings (at 35 pF) , and Table 2-19 • Summary of I/O Timing Characteristics—Software Default Settings (at 10 pF). 2-16, 2-18

3.3 V LVCMOS Wide Range was added to Table 2-21 • I/O Output Buffer

Maximum Resistances 1 and Table 2-23 • I/O Short Currents IOSH/IOSL. 2-19, 2-20 Packaging Advance v0.2 The "48-Pin QFN" pin diagram was revised. 4-2 Note 2 for the "48-Pin QFN", "68-Pin QFN", and "100-Pin VQFP" pin diagrams was added/changed to "The die attach paddle of the package is tied to ground (GND)." 4-2, 4-5, 4-9 The "100-Pin VQFP" pin diagram was revised to move the pin IDs to the upper left corner instead of the upper right corner. 4-9 Revision Changes Page

In order to provide the latest information to designers, some datasheet parameters are published before data has been fully characterized from silicon devices. The data provided for a given device, as highlighted in the "ProASIC3 nano Device Status" table on page II , is designated as either "Product Brief," "Advance," "Preliminary," or "Production." The definitions of these categories are as follows: Product Brief The product brief is a summarized version of a data sheet (advance or production) and contains general product information. This document gives an overview of specific device and family information. Advance This version contains initial estimated information based on simulation, other products, devices, or speed grades. This information can be used as estimates, bu t not for production. This label only applies to the DC and Switching Characteristics chapter of the da tasheet and will only be used when the data has not been fully characterized. Preliminary The datasheet contains information based on simulation and/or initial characterization. The information is believed to be correct, but changes are possible. Production This version contains information that is considered to be final. Export Administration Regulations (EAR) The products described in this document are subj ect to the Export Administ ration Regulations (EAR). They could require an approved export license prior to export from the United States. An export includes release of product or disclosure of technology to a foreign national inside or outside the United States. Safety Critical, Life Support, and High-Reliability Applications Policy The products described in this advance status document may not have completed the Microsemi qualification process. Products may be amended or enhanced during the product introduction and qualification process, resulting in changes in device functionality or performance. It is the responsibility of each customer to ensure the fitne ss of any product (but especially a new product) for a particular purpose, including appropriateness for safety-critical, life-support, and other high-reliability applications. Consult the Microsemi SoC Products Group Terms and Conditions for specific liability exclusions relating to life-support applications. A reliability report covering all of the SoC Products Group’s products is available at http://www.microsemi.com/soc/documents/ORT_Report.pdf. Microsemi also offers a variety of enhanced qualification and lot acceptance screening procedures. Contact your local sales office for additional reliability information.

51700111-11/01.13 © 2012 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security ; enterprise and communications; and industrial and alternative energy markets. Products include high-performance, high-reliability analog and RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and complete subsystems. Microsemi is headquarter ed in Aliso Viejo, Calif. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996