A2TBH45M65W3-FC STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 21

Technical content

Datasheet sections

  • 1 SiC MOSFET (TA, TB, TC)
  • 1.1 Electrical characteristics diagrams (TA, TB, TC)
  • 2 SiC MOSFET (TD, TE)
  • 2.1 Electrical characteristics diagrams (TD, TE)
  • 3 SiC diode (DA, DB, DC)
  • 3.1 Electrical characteristics diagrams (DA, DB, DC)
  • 4 Rectifier diode (Drev A, B, C)
  • 4.1 Electrical characteristics diagrams (Drev A, B, C)
  • 5 NTC
  • 6 DC link capacitor (two C1210X473KDRACTU in parallel)
  • 7 Package
  • 8 Electrical topology and pin description
  • 9 Package information
  • 9.1 ACEPACK 2 triple boost plus half-bridge press-fit package information

Features

  • ACEPACK 2 power module – Triple boost switch 49 mΩ of typical RDS(on) – Half-bridge switch 23.5 mΩ of typical RDS(on) – Insulation voltage 2.5 kVrms – Integrated NTC temperature sensor – Integrated DC link capacitor – DBC Cu-Al2O3-Cu based – Press-fit contact pins Application
  • DC-DC converters
  • Solar inverters

Description

This power module realizes a triple boost plus half-bridge topology in an ACEPACK 2 module with NTC and capacitance, integrating the latest advances in silicon carbide MOSFETs from STMicroelectronics, represented by third generation technology. This modular solution is used to realize complex topologies with very high power density and efficiency requirements. ACEPACK 2 DC+ (x4) GASA TA DrevA DA BCA BCA_rev GB SB TB BCB_rev GCSC TC BCC BCC_rev DC DC– (x4) BCB G1S1 G2S2 DB BAT (x4) DrevB DrevC TD TE Product status link A2TBH45M65W3-FC Product summary Order code A2TBH45M65W3-FC Marking A2TBH45M65W3-FC Package ACEPACK 2 Leads type Press-fit Packing Tray ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance A2TBH45M65W3-FC Datasheet DS14503 - Rev 5 - December 2024 For further information contact your local STMicroelectronics sales office.

1 SiC MOSFET (TA, TB, TC)

TJ = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings (TA, TB, TC) Table 2. Thermal data (TA, TB, TC) Table 3. On/off state (TA, TB, TC) Table 4. Switching energy (TA, TB, TC)

Table 5. Source-drain diode (TA, TB, TC)

1.1 Electrical characteristics diagrams (TA, TB, TC)

Figure 1. Typical output characteristics, TJ = -40 °C Figure 2. Typical output characteristics, TJ = 25 °C Figure 3. Typical output characteristics, TJ = 150 °C Figure 4. Typical transfer characteristics (TA, TB, TC) Figure 5. Typical diode charcteristics, terminal Figure 6. Maximum transient thermal impedence

2 SiC MOSFET (TD, TE)

TJ = 25 °C unless otherwise specified. Table 6. Absolute maximum ratings (TD, TE) Table 7. SiC diode thermal data (TD, TE) Table 8. SiC MOSFET on/off states (TD, TE) Table 9. SiC MOSFET switching energy (TD, TE)

Table 10. SiC MOSFET source-drain diode (TD, TE)

2.1 Electrical characteristics diagrams (TD, TE)

Figure 7. Typical output characteristics, TJ = -40 °C Figure 8. Typical output characteristics, TJ = 25 °C Figure 9. Typical output characteristics, TJ = 150 °C Figure 10. Typical transfer characteristics (TD, TE) Figure 11. Typical diode charcteristics, terminal (TD, TE) Figure 12. Maximum transient thermal impedence (TD, TE)

3 SiC diode (DA, DB, DC)

TJ = 25 °C unless otherwise specified. Table 11. Absolute maximum ratings (DA, DB, DC) Table 12. SiC diode thermal data (DA, DB, DC) Table 13. SiC diode electrical characteristic (DA, DB, DC)

3.1 Electrical characteristics diagrams (DA, DB, DC)

Figure 13. Typical forward voltage drop (DA, DB, DC) Figure 14. Maximum transient thermal impedence

4 Rectifier diode (Drev A, B, C)

TJ = 25 °C unless otherwise specified. Table 14. Rectifier diode absolute maximum ratings (Drev A, B, C) Table 15. SiC diode thermal data (Drev A, B, C) Table 16. Rectifier diode electrical characteristic (Drev A, B, C)

4.1 Electrical characteristics diagrams (Drev A, B, C)

Figure 15. Typical foward voltage drop (Drev A, B, C) Figure 16. Maximum transient thermal impedence

5 NTC

Table 17. Absolute maximum ratings for NTC temperature sensor, considered as stand-alone Figure 17. NTC typical resistance vs temperature Figure 18. NTC resistance vs temperature, zoom

6 DC link capacitor (two C1210X473KDRACTU in parallel)

Table 18. Absolute maximum rating for capacitor

7 Package

Table 19. ACEPACK 2 package

8 Electrical topology and pin description

Figure 19. Electrical topology and pin description Figure 20. Package top view with pinout

9 Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

9.1 ACEPACK 2 triple boost plus half-bridge press-fit package information

Figure 21. ACEPACK 2 triple boost plus half-bridge press-fit package outline (dimensions are in mm)

Package information

DS14503 - Rev 5 page 16/21

Table 20. ACEPACK 2 triple boost plus half-bridge press-fit mechanical data DS14503 - Rev 5 page 17/21

Figure 22. ACEPACK 2 triple boost plus half-bridge press-fit recommended PCB holes layout (dimensions DS14503 - Rev 5 page 18/21

Revision history

Table 21. Document revision history 26-Jan-2024 1 First release. characteristics diagrams (Drev A, B, C). Added Section 6: DC link capacitor (C1210X473KDRACTU). 28-Oct-2024 3 Updated title, Features, and Application in cover page. 17-Dec-2024 4 Updated Internal schematic and Figure 19. 18-Dec-2024 5 Updated Table 18. Absolute maximum rating for capacitor.

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