A2N7002HT-HF COMCHIP | Alldatasheet

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  • Drive circuits can be simple. - Low on-resistance. - AEC-Q101 Qualified. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy. RθJL 521 °C/WThermal resistance junction to lead Mechanical data - Case: SOT-523, molded plastic. - Molding compound, UL flammability classification rating 94V-0. - Terminals: Matte tin plated leads, solderable per MIL-STD-202, method 208. mA Dimensions in inches and (millimeter) 0.007(0.18) 0.003(0.08) 0.069(1.75) 0.057(1.45) 0.012(0.30) 0.004(0.10) 0.031(0.80) 0.024(0.60) 0.012(0.30) 0.006(0.15) SOT-523 0.001(0.02) 0.067(1.70) 0.059(1.50) 0.033(0.85) 0.030(0.75) 0.043(1.10) 0.035(0.90) 1 2 0.016(0.40) 0.010(0.25) 0.016(0.40) 1: Gate 2: Source 3: Drain

SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250µA Drain-source leakage current VDS = 60V, VGS = 0V VDSS IDSS V Typ Off Characteristics Electrical Characteristics (at TA=25°C unless otherwise noted) Gate-body leakage VGS = ±20V, VDS = 0V IGSS ±10 µA µA 2.5VDS = VGS, ID = 250µA VGS = 5V, ID = 0.05A RDS(ON) 1Gate threshold voltage VGS(th) Static drain-source on resistance Reverse transfer capacitance Input capacitance Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time Coss Crss td(on) tr td(off) tf nS VGS = 0V, VDS = 20V, f = 1MHZ Ciss 41 Dynamic Characteristics (Note 3) Output capacitance 15 pF VGS = 10V, RG = 25Ω, RL = 150Ω VDD = 30V, ID = 0.2A, Switching Characteristics (Note 3) V1.5 1.5 Page 2 MOSFET Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. On Characteristics (Note 2) Drain-Source Diode Characteristics Diode forward voltage (Note 1) VSD 0.85 1.2 VIS = 0.3A, VGS = 0V Ω Diode continuous forward current IS 0.3 ATC =25°C VGS = 10V, ID = 0.5A 2.51.45 Notes: 1. Surface mounted on FR4 board, t ≤ 10 sec. 2. Pulse width ≤ 300µs, duty cycle ≤ 2%. 4. Pulse width limited by maximum junction temperature. 3. Guaranteed by design, not subject to production. REV:A AQW-JTR14

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Rating and Characteristic Curves (A2N7002HT-HF) 0.2 0.4 0.6 0.8 1 0.5 1.5 2.5 Junction Temperature, Tj (°C) 0 2 3 4 5 6 0.6 0.2 0.4 0.8 Gate-Source Voltage, VGS (V) On Resistance, RDS(ON) (Ω) 25 50 75 100 125 150 0.4 0.6 1.4 1.6 Fig.4 - Gate Voltage vs. Junction Temperature 2 4 6 8 10 Fig.3 - On-Resistance vs. Gate-Source Voltage 0 10 20 30 40 Fig.6 - Capacitance Characteristics Capacitance, C (pF) VGS=4V, 4.5V, 5V, 5.5V, 6V, 8V, 10V VGS=3V Fig.1 - On-Region Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) Fig.2 - On-Resistance vs. Drain Current and Gate Voltage On Resistance, RDS(ON) (Ω) Drain Current, ID (A) VGS=5V VGS=10V ID=50mA ID=500mA Threshold Voltage, VTH 0.2 0.8 1.0 1.2 ID=250µA Junction Temperature, Tj (°C) Fig.5 - On Resistance vs. Junction Temperature 25 50 75 100 125 150 On Resistance, RDS(ON) (mΩ) IDs=500mA VGS=5V VGS=10V IDs=50mA Drain-Source Voltage, VDS (V) f=1MHz crss ciss coss REV:A AQW-JTR14

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR14 Reel Taping Specification A B C d E F P P0 P1 W Components Leader TapeTrailer Tape 50±2 Empty Pockets 100±2 Empty Pockets o 120 DD1D2 SOT-523 SOT-523 SYMBOL SYMBOL (mm) (mm) (inch) (inch) A B C d D D1 D2 1.85 ± 0.05 0.073 ± 0.002 E F P P0 P1 W W1 8.00 + 0.20 - 0.10 0.315 + 0.008 - 0.004

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR14 Marking Code 7002K 1 2 7002K Part Number Marking Code A2N7002HT-HF Suggested PAD Layout SIZE (inch) 0.014 (mm) 0.356 0.508 1.00 0.020 0.039 SOT-523 0.787 0.031 B C D 1.803 0.071E Standard Packaging REEL (pcs) Reel Size (inch) SOT-523 Case Type 3,000 7 REEL PACK A A B C D E Note: 1.The pad layout is for reference purposes only.