APT20M18B2VFR_04 ADPOW | Alldatasheet

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200V 100A 0.018ΩΩΩΩΩ MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current 6 @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) UNIT Volts Ohms µA nA Volts MIN TYP MAX 200 0.018 250 1000 ±100 APT20M18B2VFR_LVFR 200 100 400 ±30 ±40 625 5.00 -55 to 150 300 100 3000 G D S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout.

  • T-MAX™ or TO-264 Package • Avalanche Energy Rated
  • Faster Switching •
  • Lower Leakage POWER MOS V® FREDFET FAST RECOVERY BODY DIODE T-MAX™ TO-264 B2VFR LVFR

DYNAMIC CHARACTERISTICS APT20M18B2VFR_LVFR Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM SINGLE PULSE ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.25 0.20 0.15 0.10 0.05 0.5 0.1 0.3 0.7 0.9 0.05 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -100A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -100A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -100A, di/dt = 100A/µs) Peak Recovery Current (IS = -100A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps MIN TYP MAX 100 400 1.3 Tj = 25°C 230 Tj = 125°C 450 Tj = 25°C 0.9 Tj = 125°C 3.4 Tj = 25°C 11 Tj = 125°C 20 Symbol RθJC RθJA MIN TYP MAX 0.20 UNIT °C/W Characteristic Junction to Case Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T j = +25°C, L = 600µH, RG = 25Ω, Peak IL = 100A

5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 200A/µs VR ≤200V TJ ≤ 150°C 6 The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 100A @ 25°C VGS = 15V VDD = 150V ID = 100A @ 25°C RG = 0.6Ω MIN TYP MAX 9880 2320 700 330 145 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time