A200N50X4 ANAREN | Alldatasheet

Document overview

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Technical content

USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392 Model A200N50X4 Features:

  • RoHS Compliant
  • 200 Watts
  • DC - 2.2 GHz
  • AlN Ceramic
  • Non-Nichrome Resistive Element
  • Low VSWR
  • 100% Tested

Description

The A200N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as a cost compet itive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators and for use in power combiners. The termination is also RoHS compliant! General Specifications Resistive Element Thick film Substrate AlN Ceramic Terminal Finish Matte Tin over Nickel Barrier Operating Temperature -50 to +200°C (see de rating chart) Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical Specifications Resistance Value: 50 Ohms, ± 2% Power: 200 Watts Frequency Range: DC – 2.2 GHz Return Loss > 20 dB DC – 2.2 GHz Specification based on unit properly installed using suggested mounting instructions and a 50 ohm nominal impedance. Specifications subject to change. Outline Drawing UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES 1 of 2 Chip Termination

200 Watts, 50Ω

USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392 Model A200N50X4 Power De-rating: Mounting Footprint and Procedure: *Actual performance could be limited by the solder properties of the application Typical Performance: A200N50X4 A200N50X4 2 of 2