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Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features
- VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package Application
- PWM applications
- Load switch D G S Schematic diag ram Marking and pin assignment SC70-3/ SOT-323 top view Package Marking and Ordering Information Dev ice Marking Device Device Package Reel Size Tape width Quantity A1SHB MS23P01S SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Sy mbol Limit Unit Drain-Sourc e Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Cu rrent-Continuous ID -2.6 A Drain Cu rrent -Pulsed (N ote 1) IDM -13 A Maximum Pow er Dissipation PD 0.9 W Operating Junc tion and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resist ance,Junction-to-Ambient (N ote 2) RθJA 138 /W℃ Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Sy mbol Condition Min Typ Max Unit Off Characte ristics Drain-Sourc e Breakdown Voltage BVDSS VGS=0V ID=- 250μA -20 - V Ze ro Gate Voltage Drain Current IDSS VDS=- 20V,VGS=0V - - -1 μA
mbol Condition Min Typ Max Unit Gate-Body L eakage Current IGSS VGS=± 12V,VDS=0V - - ±100 nA On Ch aracteristics (N ote 3) Gate Th reshold Voltage VGS(t h) VDS=VGS,ID=- 250μA -0.4 -0.7 -1 V VGS=-4.5V, ID=-2 A - 78 120 m Ω Drain-Sourc e On-State Resistance RDS(ON) VGS=-2.5V, ID=-1.8A - 102 160 m Ω Fo rward Transconductance gFS VDS=-5V ,ID=-1A 6 - - S Dy namic Characteristics (N ote4) Input Capa citance Clss - 325 - PF Output Capa citance Coss - 63 - PF Reverse T ransfer Capacitance Crss VDS=- 10V,VGS=0V, F =1.0MHz - 37 - PF Sw itching Characteristics (N ote 4) Tu rn-on Delay Time td(on) - 11 - nS Tu rn-on Rise Time tr - 5.5 - nS Tu rn-Off Delay Time td(o ff) - 22 - nS Tu rn-Off Fall Time tf VDD=- 10V, RL=5Ω VGS=-4.5V,RGEN=3Ω - 8 - nS To tal Gate Charge Qg - 3.2 - nC Gate-Source Charg e Qgs - 0.6 - nC Gate-Drain Charge Qgd VDS=- 10V,ID=-2A VGS=- 4.5V - 0.9 - nC Drain- Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2A - - -1.2 V Diode Forward Current (N ote 2) IS - - -2.6 A Notes: 1. Re petitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production MS23P01S