A1N4007G-G COMCHIP | Alldatasheet
Document overview
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Technical content
Features
- Low drop down voltage - High current capability - Low reverse leakage. - High forward surge current capability. Mechanical data - Case: JEDEC DO-41 molded plastic - Epoxy: UL 94V-0 rate flame retardant - Polarity: Color band denotes cathode end - Terminals: Solderable per MIL-STD-750 method 2026. - Mounting position: Any - Weight: 0.34 grams(approx. ) A1N4007G-G Page 1AQW-BG001 General Purpose Silicon Rectifiers REV:A Comchip Technology CO., LTD. 0.205(5.20) 1.0(25.40) Min. 0.107(2.70) 0.034(0.86) 0.028(0.70) 0.080(2.00) 0.160(4.20) 1.0(25.40) Min. - Glass passivated chip junction. Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted) Maximum RMS voltage Unit SymbolParameter I(AV) VRMS Conditions 700 V Value Maximum recurrent peak reverse voltage VRRM 1000 V Maximum average forward rectified current see figure 1 Maximum instantaneous forward voltage Typical thermal resistance @IF = 1A 10 pF Peak forward surge current IFSM 30 A CJ Operating junction temperature range RΘJA 45 °C/W Typical junction Capacitance TJ -55 ~ +125 °C Storage temperature range TSTG -55 ~ +150 °C Maximum DC blocking voltage VDC 1000 V 8.3mS single half sine-wave superimposed on rated load (JEDEC Method) TL=110°C A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25°C TA = 125°C IR μA Junction to ambient VR = 4V, f = 1MHz - Comply with AEC-Q101 Circuit diagram Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Company reserves the right to improve product design , functions and reliability without notice.
General Purpose Silicon Rectifiers REV: A Comchip Technology CO., LTD. Rating and Characteristic Curves ( A1N4007G-G ) Fig.2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current, (A) Number of Cycles at 60Hz Fig.1 - Forward Current Derating Curve Average Forward Current, (A) Lead Temperature, TL (°C) 0 25 75 Fig.3 - Typical Instantaneous Forward Characteristics 0.01 Instantaneous Forward Current, (A) Instantaneous Forward Voltage, (V) 1.0 0.4 0.8 1.2 0.6 1.0 1.4 100 1001.2 0.1 Fig.4 - Typical Reverse Characteristics 0.001 Instantaneous Reverse Current, (μA) Percent of Rated Peak Reverse Voltage, (%) 1.0 0.1 100 125 0.4 0.8 0.6 Fig.5 - Typical Junction Capacitance Junction Capacitance, (pF) Reverse Voltage, (V) 100 0.01 10 100 0.2 1.0 0 40 80 10020 60 0.1 Resistive or inductive load 100 8.3mS single half sine-wave (JEDEC Method) Pulse width=300μs. 1% duty cycle TJ=25°C 0.01 TJ=125°C 1.0 Company reserves the right to improve product design , functions and reliability without notice. TJ=25°C
General Purpose Silicon Rectifiers Page 3AQW-BG001 REV: A Comchip Technology CO., LTD. B A Z T 90℃±5℃ Taping Specification For Axial Lead Diodes Standard Packaging Case Type DO-41 5,000 BOX ( pcs ) AMMO PACK CARTON ( pcs ) 50,000 SYMBOL (mm) (inch) DO-41 B Z T L1 0.039 (max) A L2 0.039 (max) 1.00 (max) Company reserves the right to improve product design , functions and reliability without notice. L H W LSYMBOL (mm) (inch) W H 75.00 ± 10.00 2.953 ± 0.394 140.00 ± 10.00 5.512 ± 0.394 DO-41 260.00 ± 10.00 10.236 ± 0.394