A1C15S12M3 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 19

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 1.1 Inverter stage
  • 1.1.1 IGBTs
  • 1.1.2 Diode
  • 1.2 Brake stage
  • 1.2.1 IGBT
  • 1.2.2 Diode
  • 1.3 Converter stage
  • 1.4 NTC
  • 1.5 Package
  • 2 Electrical characteristics curves
  • 3 Test circuits
  • 4 Topology and pin description
  • 5 Package information
  • 5.1 ACEPACK™ 1 CIB solder pins package information

Features

  • ACEPACK™ 1 power module – DBC Cu Al 2O3 Cu
  • Converter inverter brake topology – 1600 V, very low drop rectifiers for converter – 1200 V, 15 A IGBTs and diodes – Soft and fast recovery diode
  • Integrated NTC

Applications

  • Inverters
  • Motor drives

Description

This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1C15S12M3 Product summary Order code A1C15S12M3 Marking A1C15S12M3 Package ACEPACK™ 1 Leads type Solder contact pins ACEPACK™ 1 converter inverter brake, 1200 V, 15 A, trench gate field‑stop M series IGBT with soft diode and NTC A1C15S12M3 Datasheet DS11631 - Rev 7 - October 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

1.1 Inverter stage

Limiting values at TJ = 25 °C, unless otherwise specified.

1.1.1 IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

  1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCC = 600 V, IC = 15 A, RG = 22 Ω, VGE = ±15 V, di/dt = 690 A/µs, TJ = 150 °C 122 ns tr Current rise time 17 ns Eon (1) Turn-on switching energy 1.08 mJ td(off) Turn-off delay time VCC = 600 V, IC = 15 A, RG = 22 Ω, VGE = ±15 V,dv/dt = 7000 V/µs, TJ = 150 °C 122 ns tf Current fall time 146 ns Eoff (2) Turn-off switching energy 1.06 mJ tSC Short-circuit withstand time VCC ≤ 600V, VGE ≤ 15 V, TJstart ≤ 150 °C 10 µs RTHj-c Thermal resistance junction-to-case Each IGBT 0.95 1.05 °C/W RTHc-h Thermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.90 °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. A1C15S12M3 Inverter stage DS11631 - Rev 7 page 3/19

1.1.2 Diode

Limiting values at TJ = 25 °C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode, inverter stage

  1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode, inverter stage

1.2 Brake stage

Limiting values at TJ = 25 °C, unless otherwise specified.

1.2.1 IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage

  1. Pulse width limited by maximum junction temperature.

Table 6. Electrical characteristics of the IGBT, brake stage

Symbol Parameter Test conditions Min. Typ. Max. Unit td(off) Turn-off delay time VCC = 600 V, IC = 15 A, RG = 22 Ω, VGE = ±15 V, dv/dt = 7000 V/µs, TJ = 150 °C 122 ns tf Current fall time 146 ns Eoff Turn-off switching energy 1.06 mJ tSC Short-circuit withstand time VCC ≤ 600 V, VGE≤ 15 V, TJstart ≤ 150 °C 10 µs RTHj-c Thermal resistance junction to case Each IGBT 0.95 1.05 °C/W RTHc-h Thermal resistance case to heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.90 °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. A1C15S12M3 Brake stage DS11631 - Rev 7 page 6/19

1.2.2 Diode

Table 7. Absolute maximum ratings of the diode, brake stage

  1. Pulse width limited by maximum junction temperature.

Table 8. Electrical characteristics of the diode, brake stage

1.3 Converter stage

Limiting values at TJ = 25 °C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers Table 10. Electrical characteristics of the bridge rectifiers

1.4 NTC

Table 11. NTC temperature sensor, considered as stand-alone Figure 3. NTC resistance vs temperature Figure 4. NTC resistance vs temperature, zoom

1.5 Package

Table 12. ACEPACK™ 1 package

2 Electrical characteristics (curves)

Figure 5. IGBT output characteristics Figure 6. IGBT output characteristics Figure 7. IGBT transfer characteristics Figure 8. IGBT collector current vs case temperature Figure 9. Switching energy vs gate resistance Figure 10. Switching energy vs collector current

3 Test circuits

Figure 19. Test circuit for inductive load switching Figure 20. Gate charge test circuit Figure 21. Switching waveform Figure 22. Diode reverse recovery waveform

4 Topology and pin description

Figure 23. Electrical topology and pin description Figure 24. Package top view with CIB pinout

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. A1C15S12M3

Package information

DS11631 - Rev 7 page 15/19

5.1 ACEPACK™ 1 CIB solder pins package information

Figure 25. ACEPACK™ 1 CIB solder pins package outline (dimensions are in mm)

3.2 BSC

36.8 REF

3.5 REF x45°

2.3 REF

  • The lead size includes the thickness of the lead plating material.
  • Dimensions do not include mold protrusion.
  • Package dimensions do not include any eventual metal burrs. A1C15S12M3 ACEPACK™ 1 CIB solder pins package information DS11631 - Rev 7 page 16/19

Revision history

Table 13. Document revision history 02-May-2016 1 Initial release. Datasheet promoted from preliminary data to production data. Modified Figure 10: "IGBT thermal impedance" and. Modified Figure 22: "Package top view with CIB pinout". Modified Section 5: "Package information". of the bridge rectifiers", Section 2: "Electrical characteristics curves". impedance" and Figure 16: "Inverter diode thermal impedance". Removed maturity status indication from cover page. Added Figure 8. IGBT collector current vs case temperature.