UMW3401C UMW | Alldatasheet
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SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter Maximum ratings (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -20 Gate-Source Voltage V GS V Continuous Drain Current (T J =150℃) I D -2.5 Pulsed Drain Current I DM -10 Continuous Source-Drain Diode Current I S -0.72 A Maximum Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient(t 5s) R JA 357 ℃/W Junction Temperature T J 150 Storage Temperature T stg -55 ~+150 ℃ θ MARKING Equivalent Circuit V (BR)DSS R DS(on) MAX I D -20 V mΩ@-4.5V A m Ω@-2.5V SO T -23 1. GATE 2. SOURCE 3. DRAIN UMW 3401C 120 150 2.5 A19T UMW 3401C UMW R UMW 3401CUMW 3401C 1www.umw-ic.com 友台半导体有限公司
Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR) DSS V GS = 0V, I D =-250µA -20 V Gate-source threshold voltage V GS(th) V DS GS , I D =-250µA -0.4 -1 Gate-source leakage I GSS V DS =0V, V GS =±8V ±100 nA Zero gate voltage drain current I DSS V DS =-20V, V GS =0V -1 µA Drain-source on-state resistance R DS(on) V GS =-4.5V, I D =-2.8A 0.095 0.120 Ω V GS =-2.5V, I D =-2.0A 0.120 0.150 Forward transconductance a g fs V DS =-5V, I D =-2.8A 4.0 S Dynamic b Input capacitance C iss V DS =-10V,V GS =0V,f =1MHz 405 pFOutput capacitance C oss Reverse transfer capacitance C rss Total gate charge Q g V DS =-10V,V GS =-4.5V,I D =-3A 5.5 10 nC V DS =-10V,V GS =-2.5V,I D =-3A 3.3 6 Gate-source charge Q gs 0.7 Gate-drain charge Q gd 1.3 Gate resistance R g f =1MHz 6.0 Ω Turn-on delay time t d(on) V DD =-10V, R L =10Ω, I D =-1A, V GEN =-4.5V,Rg=1Ω 11 20 ns Rise time t r 35 60 Turn-off delay time t d(off) 30 50 Fall time t f 10 20 Drain-source body diode characteristics Continuous source-drain diode current I S T C =25℃ -1.3 A Pulse diode forward current I SM -10 Body diode voltage V SD I S =-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. a a aT =25 ℃ unless otherwise specified SOT-23 Plastic-Encapsulate MOSFETS UMW 3401C UMW R UMW 3401CUMW 3401C www.umw-ic.com 友台半导体有限公司2