A1716

UPA1716 NEC | Alldatasheet

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© 1998, 1999 MOS FIELD EFFECT TRANSISTOR µ µ µ µ PA1716 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. G13727EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES

• Low on-resistance R DS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) R DS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) R DS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

µ PA1716G Power SOP8 ABSOLUTE MAXIMUM RATINGS (T A = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) V DSS –30 V Gate to Source Voltage (VDS = 0 V) V GSS 20 V Drain Current (DC) I D(DC) 8 A Drain Current (pulse) Note1 ID(pulse) 32 A Total Power Dissipation (TA = 25°C) Note2 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Notes 1.PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm2 x 1.0 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. EQUIVARENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain PACKAGE DRAWING (Unit : mm) 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 Max. 0.05 Min. 1.8 Max. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 Max. 0.10 1,2,3 5,6,7,8 ; Source ; Gate ; Drain

Data Sheet G13727EJ1V0DS002 µµµµ PA1716 ELECTRICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT R DS(on)1 VGS = –10 V, ID = –4.0 A 12.5 16 m Ω R DS(on)2 VGS = –4.5 V, ID = –4.0 A 17 23 m Ω Drain to Source On-state Resistance R DS(on)3 VGS = –4.0 V, ID = –4.0 A 19 26 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 –2.5 V Forward Transfer Admittance | y fs | VDS = –10 V, ID = –4.0 A 71 4 S Drain Leakage Current I DSS VDS = –30 V, VGS = 0 V –1 µ A Gate to Source Leakage Current I GSS VGS = 20 V, VDS = 0 V 10 µ A Input Capacitance C iss 2100 pF Output Capacitance C oss 700 pF Reverse Transfer Capacitance C rss VDS = –10 V VGS = 0 V f = 1 MHz 300 pF Turn-on Delay Time t d(on) 30 ns Rise Time t r 150 ns Turn-off Delay Time t d(off) 120 ns Fall Time t f ID = –4.0 A VGS(on) = –10 V VDD = –15 V R G = 10 Ω 76 ns Total Gate Charge Q G 40 nC Gate to Source Charge Q GS 6n C Gate to Drain Charge Q GD ID = –8.0 A VDD = –24 V VGS = –10 V 10 nC Body Diode Forward Voltage V F(S-D) IF = 8.0 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr 45 ns Reverse Recovery Charge Q rr IF = 8.0 A, VGS = 0 V di/dt = 100 A/µ s 33 nC # # TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME D.U.T. R L VDD R G R G = 10 ΩPG. Duty Cycle ≤ 1 % VGS (on) 90 % 0 10 % 90 % ID 0 10 % ID VGS 90 % 10 % td (on) ton toff tr td (off) tf VGS Wave Form ID Wave Form D.U.T. 50 ΩPG. VDD IG = 2 mA R L VGS τ τ = 1 µ s

Data Sheet G13727EJ1V0DS00 3 µ µ µ µ PA1716 TYPICAL CHARACTERISTICS (T A = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C dT - Percentage of Rated Power - %0 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA - Ambient Temperature - ˚C PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 Mounted on ceramic substrate of 1200mm x 1.0mm FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A −0.1 −0.1 −10 −100 −1 −10 −100 TA = 25 ˚C Single Pulse ID (DC) ID(pulse) ms 1 ms 100 ms Power Dissipation Limited Remark Mounted on ceramic substrate of 1200 mm2 x 1.0 mm TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.1 100 1000 1 m 10 m 100 m 11 0 1000100100 Mounted on ceramic substrate of 1200 mm 2 x 1.0 mm Single Pulse µ R th(ch-A) = 62.5˚C

Data Sheet G13727EJ1V0DS004 µµµµ PA1716 FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A −0.1 −10 −100 Pulsed VDS = −10 V 150˚C 125˚C 75˚C 25˚C TA = −25˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0 −0.4 −0.6 −0.8 −10 −0.2 Pulsed VGS = −10 V −40 −20 −30 −4.5 V −4 V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S ID - Drain Current - A 100 −10 −100−0.1 VDS = −10 V Pulsed −25˚C 25˚C 75˚C 125˚C TA = −50˚C 150˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - mΩ 0 −5 −10 −15 Pulsed30 ID = −4 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ −10 −100 Pulsed −4.5 V VGS = −4 V −10 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = −10 V ID = −1 mA −50 0 15050 −0.5 100 −1.0 −1.5 −2.0

Data Sheet G13727EJ1V0DS00 5 µ µ µ µ PA1716 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ −50 8 0 50 100 150 ID = −4 A −4.5 V VGS = −4 V −10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VF - Source to Drain Voltage - V IF - Diode Forward Current - A0.1 100 0.5 1.0 1.5 Pulsed VGS = −4 V 0 V −4.5 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF −0.1 100 1 000 −1 −10 VGS = 0 V f = 1 MHz C iss C oss C rss SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns −0.1 100 1 000 −1 −10 −100 VDS = −15 V VGS = −10 V R G = 10Ω td(off) td(on) tr tf REVERSE RECOVERY TIME vs. DIODE CURRENT IF - Diode Current - A trr - Reverse Recovery Time - ns 0.1 1 10 100 100 di/dt = 100 A/ s VGS = 0 V µ VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 10 20 30 40 50 60 70 −10 −20 −30 −40 ID = −8.0 A −10 −12 VDS VDS = −24 V −15 V −6 V VGS

Data Sheet G13727EJ1V0DS006 µµµµ PA1716 [MEMO]

Data Sheet G13727EJ1V0DS00 7 µ µ µ µ PA1716 [MEMO]

µµµµ PA1716

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