2SA1413-Z NEC | Alldatasheet
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PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
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2SA1413-Z is designed for High Voltage Switching, especially PACKAGE DIMENSIONS in Hybrid Integrated Circuits. FEATURES 65 +02 40 23202 @ © High Voltage : Vceo = -600 V 0202/4 seo: © High Speed : tS 1.0 us > © Complement to 28C3632-Z x at | . QUALITY GRADE SoHi-4-3] 813 = Standard at HT) BSels os Please refer to “Quality grade on NEC Semiconductor Devices” 11+0 09 wax al (Document number IEI-1209) published by NEC Corporation to 08 know the specification of quality grade on the devices and its eal 1. Base rd recommended applications. 2 Colector 4. Collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Collector to Base Voltage Veso -600 Vv Collector to Emitter Voltage Vceo -600 Vv Emitter to Base Voltage Veso -7 Vv Collector Current (DC) Ic -1.0 A Collector Current (Pulse)* Ic -2.0 A t ) Total Power Dissipation (Ta = 25 °C)** Pr 2.0 Ww Junction Temperature Ti 150 °c Storage Temperature Tstg-55 to +150 °C * PW 10 ms, Duty Cycle 50 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7 mm Document No. TC-16364 (O.D. No. TC-5955) ; ate Publshed December 1998 M © NEC Corporation 1985
NEC : 2SA1413-Z ENE 2SA141B-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) [cuanacrensne [-svwsou [wn | We [wax | unt | vesreonomons ] @ [_cotecercwotcurent [ee ||| 0 | am [var -otovineo | [_ErinerCuottcurent | mse || «| 0 | um | ve taViewo | | becurentein | meee | ae] | tz | [vansoviee-oia | Sr [_Gatesor swtratonvoroge | vomits || 028 | 10 | v_[k=-aaAh=-t0ma | [see Sourton vorsge | Want || 0s [ia |v [ks -0aAwo-80ma | [esingenawan Prove [|| as || te | vaent0vi ne soma | [ ouwucarestace [em || | |r| vento ena 10] [_Falltime | Cue | oe |p| eee 280V *** Pulsed: PW § 350 us, Duty Cycle $ 2% t ) hr Classification [waren [wd a ce TYPICAL CHARACTERISTICS (Ta = 25 °C) t ) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE FORWARD SAFE OPERATING AREA ” °° = | | Zo TANCE < 10 Sa LTT 4 e =F On SERRA z 8 \\ 2 os =e RN ET TN TET 5 EAA 3 ‘TTT on 2 oo LEU TTI NN Ul « Fe NA g£ With ° a AANA | e 2 Ceramic. om? xo 2 PEN ; ; a Al NI [with PCS —>-— EEE 0 50 100 150 200 -10 -30 -10 -30 -100 -300 -1000 Te — Ambient Temperature - °C Vce - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs. REVERSE BIAS SAFE OPERATING AREA COLLECTOR TO EMITTER VOLTAGE -1.0 -100 —— [TTT] {Aes : 8 a B os 5 sol PEE 3% 5 Eee a ee a i” Zane 241 1 | 2 poo ee 3 , | Re bap j 8 ZOU eee * TT PL coe A AnmEE Kc 0 -200 -400 -600 -800 -1000 0 -2.0 4.0 6.0 -8.0 -10 @ Vce — Collector to Emitter Voltage - V Vce — Collector to Emitter Voltage - V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT 10 1 000 ee SSS ver = 50 | ESS Sever - 50 FRR REE oo HEHEHE < 03 CO § APE eee § soo LOU & < S332 SS SS 525 = © FESS HH
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So ee ee Se os so | COT TT ie SSSns=s=s=s=s=== aoe EEE COCCI Vee — Base to Emitter Voltage - V Ic - Collector Current - A e@ COLLECTOR AND BASE SATURATION TURN OFF TIME vs. VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT 3.0 ee eg 0 CE) sss o> 8.0 No 3 = eC soe UL fd ¢ Se ee 3 29 i Ss 2 CT LLL ss Ht 10st Be -30 === — ===
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GAIN BANDWIDTH PRODUCT vs. OUTPUT CAPACITANCE vs. e@ COLLECTOR CURRENT COLLECTOR TO BASE VOLTAGE SS “CU C=)
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= 50 A 3 100 Ee tt eee ° GR Py aaa eS oo 3 oo LUT Terrie | 8 so PRR tet ze” a) 2 COIS £ 10 Pat a LLU NAT : SSS SSS SOTA | PSR = so ee Zz, ne SCO o 3°" = ACUTE | Lo EPH =H 10 2oL LTT TT TTT . lc - Collector Current - mA Vce - Collector to Base Voltage - V r ) TRANSIENT THERMAL RESISTANCE FS a A A 7 1.000 fT 9 | 00 SS Sa
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= 300 FR eri Crit Pwithout heetsini soo HU TEL = 30 FEA i= ek s Con Ceo is Eat B90 FSH per) ae é 03 SHER Si 0.01 0.1 1.0 10 100 PW - Pulse Width - s | 4 a
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‘Application note name [No | e Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. | met-1202 | Assembly manual of semiconductors devices. 1E1-1207 Design of Push-Pull Type Switching Regulators (Basic). TEB-1002 Design of Push-Pull Type Switching Regulators (Applications). TEB-1003 Optimum Base Drive Conditions of Switching Power Transistors. TEB-1014 No part of this document may be copied or reproduced in any form or by any means without the prior written td) consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual Property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. ) The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact t ) our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 ree