KTA1274 KEC | Alldatasheet
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- 6. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KTA1274 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 2 GENERAL PURPOSE APPLICATION.
FEATURES
hComplementary to KTC3227. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -400 mA Base Current IB -100 mA Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 ELECTRICAL CHARACTERISTICS (Ta=25) Note : hFE Classification O:70~140, Y:120~240. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA Emitter-Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-5mA, IB=0 -80 - - V DC Current Gain hFE(1) (Note) VCE=-2V, IC=-50mA 70 - 240 hFE(2) VCE=-2V, IC=-200mA 40 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-20mA - - -0.4 V Base-Emitter Voltage VBE VCE=-2V, IC=-5mA -0.55 - -0.8 V Transition Frequency fT VCE=-10V, IC=-10mA - 100 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 14 - pF
- 6. 8 2/2 KTA1274 Revision No : 2