9972GP

SSM9972GP SSC | Alldatasheet

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Technical content

www.SiliconStandard.com 1 of 5 N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV DSS 60V Simple drive requirement R DS(ON) 18mΩ Fast switching ID 60A

Description

G D S G D S TO-263 (S) G D S TO-220(P) The SSM9972GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9972GP in TO-220, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. Pb-free lead finish (second-level interconnect) Absolute Maximum Ratings Symbol Units VDS V VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C W/°C TSTG TJ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 1.4 °C/W Rthj-a Thermal Resistance Junction-ambient Max. 62 °C/W Parameter Rating Drain-Source Voltage 60 Gate-Source Voltage ±25 V Continuous Drain Current, VGS @ 10V3 60 A Continuous Drain Current, VGS @ 10V 38 A Pulsed Drain Current1 230 A Total Power Dissipation 89 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.7 Thermal Data Parameter Storage Temperature Range SSM9972GP,S 2/1 6 /2005 Rev.1.1

www.SiliconStandard.com 2 of 5 SSM9972GP,S 2/1 6 /2005 Rev.1.1 Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V Δ BVDSS/ Δ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=35A - - 18 mΩ VGS=4.5V, ID=25A - - 22 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=35A - 55 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=±25V - - ±100 nA Qg Total Gate Charge2 ID=35A - 32 51 nC Qgs Gate-Source Charge VDS=48V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC td(on) Turn-on Delay Time2 VDS=30V - 11 - ns tr Rise Time ID=35A - 58 - ns td(off) Turn-off Delay Time RG=3.3Ω,V GS=10V - 45 - ns tf Fall Time RD=0.86Ω -8 0- ns Ciss Input Capacitance V GS=0V - 3170 5070 pF Coss Output Capacitance V DS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.7 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=35A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=35A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width <300us , duty cycle <2%.

www.SiliconStandard.com 3 of 5 SSM9972GP,S 2/1 6 /2005 Rev.1.1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic offf Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 100 150 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =2 5A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =35A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.2 0.7 1.2 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 100 150 200 02468 1 0 1 2 1 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V

www.SiliconStandard.com 4 of 5 SSM9972GP,S 2/1 6 /2005 Rev.1.1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 02 0 4 0 6 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =48V V DS =38V V DS =30V I D =3 5A 100 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC

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