CEM9953A CET | Alldatasheet
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Technical content
Dual P-Channel Enhancement Mode MOSFET FEATURES 5 | @ -30V , -2.9A , Rosonj=100MQ @Ves=-10V. Rosion)=150MQ @Ves=-4.5V. D1 D1 D2 D2 © Super high dense cell design for extremely low Rosion). ¢ High power and current handing capability. NTN e Surface Mount Package. ey Sy > DJ S0-8 St G1 s2 G2 ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C } » | 2 | a | -Pulsed” | om | so [| a | Drain-Source Diode Forward Current * Operating Junction and Storage Ty, Tst¢ -55 to 150 ae) Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 5-195
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted) [Paras] coon | yt unt | 5 | ES ntiitptontat —[ ws | eatin [| [ata certo | os [nai [fal ET TT EE aoe fet eaeet He Psaauteess || [of esata [om | west [ol [Ta fomimeoocs | & | westoxen [e[ | [3 mE CIra - Vos =-10V, Ves= 0V fates fee] Sk" CTateta meta ee Ce rasta | Sec rome | mE 5-196
2 CEE = LLU
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 V = ERR
7 VELL ELL "of eee EA
Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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35 Ee =e eer eS
Figure 13. Normalized Thermal Transient Impedance Curve