IRF9953 IRF | Alldatasheet
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HEXFET ® Power MOSFET PD - 9.1560A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 8/25/97 SO-8 VDSS = -30V R DS(on) = 0.25Ω IRF9953
Description
Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Symbol Maximum Units Drain-Source Voltage V DS -30 Gate-Source Voltage V GS ± 20 TA = 25°C -2.3 TA = 70°C -1.8 Pulsed Drain Current I DM -10 Continuous Source Current (Diode Conduction) I S 1.6 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy E AS 57 mJ Avalanche Current I AR -1.3 A Repetitive Avalanche Energy E AR 0.20 mJ Peak Diode Recovery dv/dt dv/dt -5.0 V/ ns Junction and Storage Temperature Range T J, TSTG -55 to + 150 °C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Continuous Drain Current Maximum Power Dissipation A ID PD V W Top View 4 5 l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated
Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.82 1.2 V T J = 25°C, IS = -1.25A, VGS = 0V trr Reverse Recovery Time ––– 27 54 ns T J = 25°C, IF = -1.25A Q rr Reverse RecoveryCharge ––– 31 62 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics 1.3 A Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 67mH RG = 25Ω , IAS = -1.3A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V V GS = 0V, ID = -250µA ΔV(BR)DSS /Δ TJ Breakdown Voltage Temp. Coefficient –––0.015 ––– V/°C Reference to 25°C, ID = -1mA VGS(th) Gate Threshold Voltage -1.0 ––– ––– V V DS = VGS , ID = -250µA gfs Forward Transconductance ––– -2.4 ––– S V DS = -15V, ID = -2.3A ––– ––– -25 V DS = 24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = 20V Q g Total Gate Charge ––– 6.1 12 I D = -2.3A Qgs Gate-to-Source Charge ––– 1.7 3.4 nC V DS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 2.2 V GS = -10V, See Fig. 10 td(on) Turn-On Delay Time ––– 9.7 19 V DD = -10V tr Rise Time ––– 14 28 I D = -1.0A td(off) Turn-Off Delay Time ––– 20 40 R G = 6.0Ω tf Fall Time ––– 6.9 14 R D = 10Ω Ciss Input Capacitance ––– 190 ––– V GS = 0V Coss Output Capacitance ––– 120 ––– pF V DS = -15V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA ΩRDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G
Fig 3. Typical Transfer Characteristics Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics 0.1 100 0.1 1 10 D DS 20µs PULSE WIDTH T = 25°C A -I , Drain-to-Source Current (A) -V , Drain-to-Source Vol tage (V) J -3.0V VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 0.1 100 0.1 1 10 D DS A -I , D ra in -to -S ourc e C u rren t (A) -V , Drain-to-Source Vol tage (V) -3.0V VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 20µs PULSE WIDTH T = 150°CJ 0.1 100 T = 25°C T = 150°C J J GS D A -I , D rain-to-Source C urrent (A) -V , Gate-to-Source Voltage (V) V = -1 0V 20µs PULSE W IDTH DS Fig 4. Typical Source-Drain Diode Forward Voltage 0.1 100 T = 25°C T = 150°C J J V = 0V GS SD SD A -I , Reverse Drain C urrent (A) -V , Source-to-Drain Voltage (V)
Fig 8. Maximum Avalanche Energy Vs. Drain Current Fig 6. Typical On-Resistance Vs. Drain Current Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 5. Normalized On-Resistance Vs. Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D -10V -1.0A 0.0 0.5 1.0 1.5 2.0 2.5 A -I , D rain Current (A)D V = -10V V = -4.5V GS GS R DS(on) , Drain-to-Source On Resistance ( Ω ) 0.00 0.20 0.40 0.60 0.80 0369 1 2 1 5 A GS I = -2.3A D -V , Gate-to-Sou rce Vol tage (V) R DS(on) , Drain-to-Source On Resistance ( Ω ) 25 50 75 100 125 150 120 150 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM -0.58A -1.0A -1.3A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 100 200 300 400 1 10 100 C , Capacitance (pF) A DS-V , Drain-to-Source Voltage (V) V = 0V , f = 1MHz C = C + C , C S HORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd C iss C oss C rss 0 2 4 6 8 10 Q , Total Gate Charge (nC) -V , Gate-to-Source Voltage (V) G GS I =D -2.3A V =-10VDS 0.1 100 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJA A P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJA 0.01 0.02 0.05 0.10 0.20 0.50 SINGLE PULSE (THERMAL RESPONSE)
K x 45° C L θ H 0.25 (.010) M A M A 0.10 (.004) B 8X 0.25 (.010) M C A S B S - C - e - B - D E - A - 8 7 6 5 1 2 3 4 RECOMMENDED FOOTPRINT 0.72 (.028 ) 1.78 (.070) 6.46 ( .255 ) 1.27 ( .050 ) DI M INC HE S M ILLIM ET ERS M IN M A X MIN M AX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e .050 BASI C 1.27 BASI C e1 .025 BASI C 0.635 BASIC H .2284 .2440 5.80 6.20 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 θ 0° 8° 0 ° 8° NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. D IME NS IO NS A RE S HO W N IN M ILLIME TER S (INC HE S). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIM ENS IO NS IS TH E LE NG TH O F LE AD FO R SO LDE RIN G TO A S UB STRA TE.. EXAMPLE : THIS IS AN IRF7101 DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK W AFER LOT CODE (LAST 4 DIGITS) XXXX BOTTOM PART NUMBERTOP INTERNATIONAL RECTIFIER LOGO F7101 312 θ
Dimensions are shown in millimeters (inches) Tape & Reel Information 330. 00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLI NE CONFORMS TO EI A-481 & EI A-541. FEED DIRECTIO N TERMINAL NUMBER 1 12.3 ( . 484 ) 11.7 ( . 461 ) 8. 1 ( . 318 ) 7. 9 ( . 312 ) NOTES: 1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R. 2. ALL DI MENSIONS ARE SHOWN I N MILLI METERS(I NCHES). 3. OUTLINE CONFORMS TO EIA-481 & EI A-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97