99003 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Silicon Controlled Rectifier DSCC Seri 99003 we PrN MP Paee R AA | ES Lf > Rome = 8B kK B 1.050 1.060 26.67 26.92 s c ! D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 2 F797 827 20.24 21.01 Ly do & G 276 .286 701 7.26 J .425 499 10.80 12.67 2 wW U rl H K — .260 .280 6.60 7M Dia. M 500 600 12.70 15.24 —_ T co — N 140 150 3.56 3.81 tH] to a 295 === 7.49 4A Gr -~B oo S .225 275 6.48 6.99 TO-208AD TO-209AC UU .370 .380 9.40 9.65 (TO-83) (T0-94) Vo 213 223 5.41 5.66 Dia. W065 .075 1.65 1.91 Dia. Note i: 1/2-20 UNF- 5A Y 30 38737800 Note 2: Full thread within 2 1/2 threads 2 514 330 1306 13.46 AA .089 .099 2.26 2.51 Catalog Number Forward & Reverse Repetitive Blocking TO-83 TO-94 e Replacement for MIL-PFR-19500/204 99003-2N1792 2 99003-2N1910 1 50V © Avail i 99003-2N1793 2 99003-2N1911 1 toov Available as JAN, JANTX, JANTXV equivalent 99003-2N1795 2 99003-2N1913 1 200V ©1000 Amperes surge current 99003-2N1797 2 99003-2N1915 1 300V 99003-2N1798 2 99003-2N1916 1 400V ° 200V/us dv/dt 99003-2N1799 2 99003-2N1805 1 500V © 40 us turn-off time 99003-2N1800 2 99003-2N1806 1 600V
Electrical Characteristics
Max. RMS on-state current 'T(RMS) 79 Amps Tc = a3ec Max. average on-state cur. 'T(AV) 50 Amps TC = 83°C Max. peak on-state voltage VIM 2.1 Volts 'TM = 220 A(peak) Max. holding current ty 75 mA Mox. peak one cycle surge current 'TsM 1000 A Tc = 83°C, 60 Hz Max. I2t capability for fusing 2t 4,150A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -40°C to 125°C Storage temperature range TSTG -40°C to 150°C Maximum thermal resistance Reuc 0.40°C/W Junction to case Typical thermal resistance (greased) @CcS 0.20°C/W Case to sink Max mounting torque 150 inch pounds Weight TO-94 Approx. 3.6 ounces (102.0 grams) typical TO-83 Approx. 3.24 ounces (91.8 grams) typical . LAWRENCE ° 6 Lake Street Lawrence, MA 01841 24 MICFOSEM | Bi tela of 26-07 Ro | FAX: (978) 689-0803 www.microsemi.com
Critical rate of rise of on-state current (note 1) _—di/dt 100A /usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. 3 Typical circuit commuted turn-off time (note 2) tg 40 usec. Ty = 100°C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 50A (pk), ton = 100 + 5Qusec, -di/dt = 25A/usec, VR = 50V dv/dt = 20V/usec. VDRM = rated Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger ‘oT 70mA Ty = 25°C Max. peak gate power Pom 5W Average gate power Po(av) 0.5W tp = 10 usec. Max. peak gate current ‘GM 2.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) Vom -5.0V Blocking Max. leakage current 'DRM 5mA Ty =125°C &V DRM Max. reverse leakage 'RRM 5mA Ty =125°C &V RRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty =125°C 04-24-07 Rev. 1