FSGM300N ONSEMI | Alldatasheet
Document overview
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- PDF pages: 16
Technical content
Features
- Advanced Burst−Mode Operation for Low Standby Power
- Random Frequency Fluctuation for Low EMI
- Pulse−by−Pulse Current Limit
- Various Protection Functions: Overload Protection (OLP), Over−V oltage Protection (OVP), Abnormal Over−Current Protection (AOCP), Internal Thermal Shutdown (TSD) with Hysteresis, Output−Short Protection (OSP), and Under−V oltage Lockout (UVLO) with Hysteresis
- Auto−Restart Mode
- Internal Startup Circuit
- Internal High−V oltage SENSEFET: 650 V
- Built−in Soft−Start: 15 ms
- This is a Pb−Free Device
Applications
- Power Supply for LCD Monitor, STB and DVD Combination www.onsemi.com PDIP−8 CASE 626−05 MARKING DIAGRAM See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION
$Y = ON Semiconductor Logo &E ‘= Designates Space &Z = Assembly Plant Code &2 = 2 −Digit Date Code Format &K = 2 −Digit Lot Run Tracebility Code FSGM300N = Specific Device Code
www.onsemi.com RDS(ON) (Max.) Output Power Table (Note 2) Replaces Device Shipping 230VAC /C0043 15% (Note 3) 85 − 265 VAC Adapter (Note 4) Open Frame (Note 5) Adapter (Note 4) Open Frame (Note 5) FSGM300N 8−DIP −40°C ~ +125°C 1.60 A 2.2 /C0087 26 W 40 W 20 W 30 W FSFM300N 3000 / Tube 1. Pb −free package per JEDEC J−STD−020B. 2. The junction temperature can limit the maximum output power. 3. 230 V AC or 100 / 115 VAC with voltage doubler. 4. Typical continuous power in a non −ventilated enclosed adapter measured at 50°C ambient temperature. 5. Maximum practical continuous power in an open −frame design at 50°C ambient temperature. Application Circuit Figure 1. Typical Application Circuit
Figure 2. Internal Block Diagram
7.7 V / 12 VVCC good
Figure 3. Pin Configuration (Top View)
Ground. This pin is the control ground and the SENSEFET source. GND. If the voltage of this pin reaches 6 V, the overload protection triggers, which shuts down the power switch. high−voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin. Once VCC reaches 12 V, the internal current source (ICH) is disabled. SENSEFET Drain. High−voltage power SENSEFET drain connection. should not be assumed, damage may occur and reliability may be affected.
- Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX = 0.83) and junction temperature
- Infinite cooling condition (refer to the SEMI G30−88).
- Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
Figure 4. Repetitive Peak Switching Current
www.onsemi.com THERMAL CHARACTERISTICS Symbol Characteristic Value Unit /C0113JA Junction−to−Ambient Thermal Impedance (Note 10) 80 °C/W /C0113JC Junction−to−Case Thermal Impedance (Note 11) 20 °C/W /C0089JT Junction−to−Top Thermal Impedance (Note 12) 35 °C/W 10.Infinite cooling condition (refer to the SEMI G30−88). 11. Free standing with no heat−sink under natural convection. 12.Measured on the package top surface. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit SENSEFET SECTION BVDSS Drain−Source Breakdown Voltage VCC = 0 V, ID = 250 /C0109A 650 − − V IDSS Zero−Gate−Voltage Drain Current VDS = 520 V, TA = 125°C − − 250 /C0109A RDS(ON) Drain−Source On−State Resistance VGS = 10 V, ID = 1 A − 1.8 2.2 /C0087 CISS Input Capacitance (Note 13) VDS = 25 V, VGS = 0 V, f = 1MHz − 515 − pF COSS Output Capacitance (Note 13) VDS = 25 V, VGS = 0 V, f = 1MHz − 75 − pF tr Rise Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 26 − ns tf Fall Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 25 − ns td(on) Turn−On Delay Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 14 − ns td(off) Turn−Off Delay Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 32 − ns CONTROL SECTION fS Switching Frequency (Note 13) VCC = 14 V, VFB = 4 V 61 67 73 kHz /C0068fS Switching Frequency Variation (Note 13) −25°C < TJ < 125°C − ±5 ±10 % DMAX Maximum Duty Ratio VCC = 14 V, VFB = 4 V 71 77 83 % DMIN Minimum Duty Ratio VCC = 14 V, VFB = 0 V − − 0 % IFB Feedback Source Current VFB = 0 120 150 180 /C0109A VSTART UVLO Threshold Voltage VFB = 0 V, VCC Sweep 11 12 13 V VSTOP After Turn−on, VFB = 0 V 7.0 7.7 8.5 V VOP VCC Operating Range 13 − 22.5 V tS/S Internal Soft−Start Time VSTR = 40 V, VCC Sweep − 15 − ms BURST−MODE SECTION VBURH Burst−Mode Voltage VCC = 14 V, VFB Sweep 0.6 0.7 0.8 V VBURL 0.4 0.5 0.6 V Hys − 200 − mV
performance may not be indicated by the Electrical Characteristics if operated under different conditions. 13.Although these parameters are guaranteed, they are not 100% tested in production. LEB includes gate turn−on time. Table 1. COMPARISON OF FSFM300N AND FSGM300N
www.onsemi.com Transformer Np/2 N14V N5V Np/2 1 Na 4 5 8N5V 6 BOT TOP Barrier tapeEER3016 N15V Na 5 6 Np /2 N5V Np /2 Figure 26. Schematic of Transformer Table 3. WINDING SPECIFICATION
Electrical Characteristics
Table 4. ELECTRICAL CHARACTERISTICS
- Core: EER3016 (Ae = 109.7 mm2) • Bobbin: EER3016
Table 5. Bill of Materials SENSEFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
PDIP−8 CASE 626−05 ISSUE P DATE 22 APR 2015 SCALE 1:1 NOTE 8 D b L A eB XXXXXXXXX AWL YYWWG E GENERIC MARKING DIAGRAM* XXXX = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb −Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. A TOP VIEW C SEATING PLANE
0.010 CASIDE VIEW
A −−−− 0.210 A1 0.015 −−−− b 0.014 0.022 C 0.008 0.014 D 0.355 0.400 D1 0.005 −−−− e 0.100 BSC E 0.300 0.325 M −−−− 10 −−− 5.33 0.38 −−− 0.35 0.56 0.20 0.36 9.02 10.16 0.13 −−−
2.54 BSC
7.62 8.26 −−− 10 MIN MAX MILLIMETERS NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY . 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). E1 0.240 0.280 6.10 7.11 0.060 TYP 1.52 TYP M c B A2 0.115 0.195 2.92 4.95 L 0.115 0.150 2.92 3.81 H NOTE 5 e e/2 A2 NOTE 3 M B M NOTE 6 M STYLE 1: PIN 1. AC IN 2. DC + IN 3. DC − IN 4. AC IN 5. GROUND 6. OUTPUT 7. AUXILIARY 8. V CC MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42420BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP−8 © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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