NXH35C120L2C2ESG_V01 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low Thermal Resistance Substrate for Low Thermal Resistance
  • 6 mm Clearance Distance between Pin to Heatsink
  • Compact 73 mm × 40 mm × 8 mm Package
  • Solderable Pins
  • Thermistor
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications
  • Industrial Motor Drives
  • Servo Drives

Figure 1. NXH35C120L2C2ESG Schematic Diagram

ORDERING INFORMATION

DIP26 67.8x40 CASE 181AD MARKING DIAGRAM www.onsemi.com NXH35C120L2C2ESG DIP26 (Pb−Free)

6 Units /

www.onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit IGBT Collector−Emitter Voltage VCES 1200 V Gate−Emitter Voltage VGE ±20 V Continuous Collector Current @ TC = 80°C (TvJmax = 175°C) IC 35 A Pulsed Collector Current ICpulse 105 A DIODE Peak Repetitive Reverse Voltage VRRM 1200 V Continuous Forward Current @ TC = 80°C (TvJmax = 175°C) IF 35 A Repetitive Peak Forward Current IFRM 105 A RECTIFIER DIODE Peak Repetitive Reverse Voltage VRRM 1600 V Continuous Forward Current @ TC = 80°C (TvJmax = 150°C) IF 35 A Repetitive Peak Forward Current IFRM 105 A I2t value (10 ms single half−sine wave) @ 25°C (10 ms single half−sine wave) @ 150°C I2t 1126 510 A2t Surge current (10 ms sin180°) @ 25°C IFSM 520 A THERMAL PROPERTIES Storage Temperature range Tstg −40 to 125 °C INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 50Hz Vis 3000 VRMS Internal isolation HPS Creepage distance 6.0 mm Clearance distance 6.0 mm Comperative Tracking Index CTI > 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.

www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit IGBT CHARACTERISTICS Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1200 V ICES – – 250 μA Collector−Emitter Saturation Voltage VGE = 15 V, IC = 35 A, TJ = 25°C VCE(sat) – 1.8 2.4 V VGE = 15 V, IC = 35 A, TJ = 150°C – 1.9 – Gate−Emitter Threshold Voltage VGE = VCE, IC = 4.25 mA VGE(TH) 4.8 6 6.8 V Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 400 nA Turn−on Delay Time TJ = 25 °C VCE = 600 V, IC = 35 A VGE = ±15 V, RG = 15 /C0087 td(on) – 104 – ns Rise Time tr – 64 – Turn−off Delay Time td(off) – 277 – Fall Time tf – 53 – Turn−on Switching Loss per Pulse Eon – 2900 – /C0109J Turn off Switching Loss per Pulse Eoff – 1200 – Turn−on Delay Time TJ = 150°C VCE = 600 V, IC = 35 A VGE = ±15 V, RG = 15 /C0087 td(on) – 168 – ns Rise Time tr – 72 – Turn−off Delay Time td(off) – 320 – Fall Time tf – 165 – Turn−on Switching Loss per Pulse Eon – 4030 – /C0109J Turn off Switching Loss per Pulse Eoff – 2200 – Input Capacitance VCE = 20 V. VGE = 0 V f = 100 kHz Cies – 8333 – pF Output Capacitance Coes – 298 – Reverse Transfer Capacitance Cres – 175 – Total Gate Charge VCE = 600 V, IC = 35 A, VGE = 0 V ~ +15 V Qg – 360 – nC Temperature under switching conditions Tvj op −40 150 °C Thermal Resistance − chip−to−heatsink Thermal grease, Thickness − 3 mil, /C0108 = 2.8 W/mK RthJH – 0.83 – °C/W DIODE CHARACTERISTICS Brake Diode Reverse Leakage Current VR = 1200 V IR – – 200 /C0109A Diode Forward Voltage IF = 35 A, TJ = 25°C VF – 2.2 2.7 V IF = 35 A, TJ = 150°C – 2 – Reverse Recovery Time TJ = 25°C VCE = 600 V, IC = 35 A VGE = ±15 V, RG = 15 /C0087 trr 224 ns Reverse Recovery Charge Qrr – 1.51 – μC Peak Reverse Recovery Current IRRM – 18 – A Reverse Recovery Energy Err – 410 – μJ Reverse Recovery Time TJ = 150 °C VCE = 600 V, IC = 35 A VGE = ±15 V, RG = 15 /C0087 trr 532 ns Reverse Recovery Charge Qrr – 5.36 – μC Peak Reverse Recovery Current IRRM – 30 – A Reverse Recovery Energy Err – 1983 – μJ Temperature under switching conditions Tvj op −40 150 °C Thermal Resistance − chip−to−heatsink Thermal grease, Thickness − 3mil, /C0108 = 2.8 W/mK RthJH – 1.4 – °C/W

www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter UnitMaxTypMinSymbolTest Conditions RECTIFIER DIODE CHARACTERISTICS Rectifier Reverse Leakage Current VR = 1600 V IR – − 200 /C0109A Rectifier Forward Voltage IF = 35 A, TJ = 25°C VF – 1.1 1.5 V IF = 35 A, TJ = 150°C – 1 – Temperature under switching conditions Tvj op −40 150 °C Thermal Resistance − chip−to−heatsink Thermal grease, Thickness − 3 mil, /C0108 = 2.8 W/mK RthJH – 1.25 – °C/W THERMISTOR CHARACTERISTICS Nominal resistance T = 25°C R25 – 5 – k/C0087 Nominal resistance T = 100°C R100 – 493.3 – /C0087 Deviation of R25 /C0110R/R −5 – 5 % Power dissipation PD – 20 – mW Power dissipation constant – 1.4 – mW/K B−value B(25/50), tolerance ±2% – 3375 – K B−value B(25/100), tolerance ±2% – 3433 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

DIP26 67.8x40 CASE 181AD ISSUE B DATE 05 AUG 2021 XXX = Specific Device Code ZZZ = Assembly Lot Code AT = Assembly & Test Location Y = Year WW = Work Week GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXX ZZZATYWW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON09519HDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1DIP26 67.8x40 © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative