9639

9639 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

This is preliminary information on a new product forseen to be developped. Details are subject to change without notice STS5N150 N-CHANNEL 150V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET ■ TYPICAL R DS (on) = 0.045 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ EXTREMELY LOW GATE CHARGE

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL

Ordering Information

TYPE VDSS R DS(on) ID STS5N150 150 V <0.06 Ω 5 A SALES TYPE MARKING PACKAGE PACKAGING STS5N150 S5N150 SO-8 TAPE & REEL SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 150 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 5A ID Drain Current (continuous) at TC = 100°C 3A IDM (•) Drain Current (pulsed) 20 A Ptot Total Dissipation at TC = 25°C 2.5 W Tstg Storage Temperature -55 to 150 °CTj Operating Junction Temperature

(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t /c91/c32 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb (*)Thermal Resistance Junction-ambient Max 50 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 150 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 2V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 2.5 A 0.045 0.06 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 75 V I D =5 A TBD S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, VGS = 0 TBD TBD TBD pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 75 V I D = 2.5 A R G = 4.7 Ω V GS = 10 V (Resistive Load, Figure 1) TBD TBD ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 120V ID = 5A VGS = 10V (see test circuit, Figure 2) TBD TBD TBD 28 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 75 V I D = 2.5 A R G = 4.7Ω, V GS = 10 V (Resistive Load, Figure 1) TBD TBD ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A VSD (*) Forward On Voltage ISD = 5 A V GS = 0 1.2 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A di/dt = 100A/µs VDD = 50 V T j = 150°C (see test circuit, Figure 3) TBD TBD TBD ns nC A ELECTRICAL CHARACTERISTICS (continued)

Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour Fig. 1: Switching Times Test Circuits For Resistive Load

DIM. mm inch A1 . 7 5 0 . 0 6 8 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e1 . 2 7 0 . 0 5 0 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M0 . 6 0 . 0 2 3 S 8 (max.) 0016023 SO-8 MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com