CEM9410A CET | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor | s| FEATURES © 30V , 7.3A,, Rosconjy=28mQ @Ves=10V. Rosionj=42mQ @Ves=4.5V. Super high dense cell design for extremely low Ros(on). L_[ 1 High power and current handing capability. ney \\ Surface Mount Package. | { {| Q 50-8 NC S S G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @T=125°C |» | v3 | a | -Pulsed” Fwomnrowosose | | es |W Operating Junction and Storage Tu, Tst¢ -55 to 150 °C Temperature Range , THERMAL CHARACTERISTICS 5-102
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) 5 | arGumbescninp [as [ veoeamaa Ta [TT octet | os [vation | [2 Da forties [ Yona | [ol armen [en [ votaneaan [a [os [3 TV Seen Psnins | [ae [a sano [x | vost [a TT Ta Fomstensane | as [ voernvers | [eT Ts er - Vos =15V, Ves=0V face fos San (Tatete MEIDIE me Dela le man [Laer | Sc cet || falafel sedate | a | Ee 5-103
a.Surface Mounted on FR4 Board, t <10sec. b.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%.
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Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figures aan Curtent and temperature
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
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Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve