935131429733-T3N

935131429733-T3N MURATA1 | Alldatasheet

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Technical content

Rev. 2.00 Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 General description HSSC Murata 3D Silicon Capacitor operates from -55°C to 150°C. This version based on PICS technology which is the single 3.3µF Capacitor in size 1812 offering high temperature stability up to 150°C, very low leakage current and high level performances dedicated to industries such as avionic, dowhole, military, and others where integration, temperature and performance play a key role. With his high stability across temperature range, the 3.3µF capacitor works efficiently and durably in harsh environments. Assembly: This 1812 3.3µF has 2 NiAu pads Other capacitance values and other package size are available as a single die or capacitor array, please feel free to contact us. Key features  High temperature stability (up to 150°C) o Temperature ±0.5% (-55°C to +150°C) o Voltage <-0.1%/Volt o Negligible capacitance loss through ageing  Small size : 1812 [4.7mmx3.6mm]  Low profile (400µm).  Low leakage current < 1nA  High reliability  Compatible with high temperature cycling during manufacturing operations (exceeding 300°C)  Applicable for almost embedded and wire bonding application Key applications  Any demanding applications, such as medical, aerospace, automotive industrial…  Supply decoupling / filtering of active device  High reliability applications  Devices with battery operations  High temperature applications  High volumetric efficiency (i.e. capacitance per unit volume)

Rev. 2.00 Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 Functional diagram The next figure provides implementation set-up diagram. Figure 1 Block Diagram Electrical performances Symbol Parameter Conditions Min. Typ. Max. Unit C Capacitance value @+25°C - 3300 - nF ΔCP Capacitance tolerance (1) @+25°C -15 - +15 % TOP Operating temperature -55 20 +150 °C TSTG Storage temperature (2) -70 - +165 °C ΔCT Capacitance temperature variation -40°C to +200°C 62 ppm/K RVDC Rated voltage (3) - 3.3 - VDC BV Breakdown voltage @+25°C 11 - - VDC ΔCRVDC DC Capacitance voltage variation From 0V to RVDC, @22°C - - -0.1 %/VDC IR Insulation resistance @ RVDC, +22°C, 120s - 100 - GΩ ESR Equivalent Series Resistance @+22°C, shunt mode - 1 - Ω ESL Equivalent Series Inductance - 100 - pH Table 1 - Electrical performances (1): other tolerance available upon request (2): without packaging (3): Lifetime is voltage and temperature dependent, please refer to application note ‘Lifetime of 3D capacitors’

Rev. 2.00 Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 Pinning definition Figure 2 Pinning definition pin # Symbol

1 Signal1

2 Signal2

Table 2 - Pining description.

Ordering Information

Murata Integrated Passive Devices delivers products with AQL level II (0.65). Tighter quality levels are available upon request. Part number Package Packaging Finishing Description 935131429733-T3N Tape & Reel 1000 (3) NiAu(1) High Reliability Silicon Capacitor 3.3uF, - 55/+150C, 1812, 4.7 x 3.6 mm,Thickness : 400um, BV: 11V (2) Table 3 - Packaging and ordering information (1) detail for pad finishing (2) Refer to Package outline (3) missing capacitors can reach 0.5% (only applicable to T&R) Product Name Die Name Description 935131429733-T3N C1812733 High Reliability Silicon Capacitor 3.3uF, -55/+150C, 1812, 4.7 x 3.6 mm,Thickness : 400um, BV: 11V Table 4 - Die information

Rev. 2.00 Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 Pad Metallization The standard pad finishing metallization is NiAu (ENIG). Other Metallization are possible on request. Silicon dies are not sensitive to humidity, please refer to applications notes ‘Assembly Notes’ section ‘Handling precautions and storage’. Material regulation This product is RoHS compliant at the time of publication. For further information about regulation compliancy, please ask your sales representative. Package outline The product is delivered as a bare silicon die. Figure 3 - Package outline drawing L (mm) W (mm) T (mm) c (mm) P (mm) e (mm) Table 5 - Dimensions and tolerances

Rev. 2.00 Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 Figure 4: isometric view

Rev. 2.00 Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 Figure 7 - Tape drawing Cavity dimensions Carrier tape width W0 Carrier tape pitch P0 Reel Capacity Ao Bo Ko 3.8 5.1 0.7 12 8 1000 Table 7 - Tape dimensions (mm)

Rev. 2.00 Murata Integrated Passive Solutions S.A. makes no representation that the use of its products in the circuits described herein, or the use of other technical information contained herein, will not infringe upon existing or future patent rights. The descriptions contained herein do not imply the granting of licenses to make, use, or sell equipment constructed in accordance therewith. Specifications are subject to change without notice. Technical Datasheet Murata High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 www.murata.com mis@murata.com High Stability Silicon Capacitor HSSC 1812 3.3µF BV11 Definitions Data sheet status Objective specification: This data sheet contains target or goal specifications for product development. Preliminary specification: This data sheet contains preliminary data; supplementary data may be published later. Product specification: This data sheet contains final product specifications. Limiting values Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those given in the Electrical performances sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Revision history

Revision Date Description Author Release 1.0 2013 November 27th Objective specification LLE Release 2.0 2021 January 29th Preliminary specification LLE Disclaimer / Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Murata customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Murata for any damages resulting from such improper use or sale. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.