91032 VISHAY | Alldatasheet

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Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF630S, SiHF630S Vishay Siliconix

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • Surface Mount
  • Available in Tape and Reel
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • F a s t S w i t c h i n g
  • Ease of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. The D 2PAK is a surface mount power package capable of accommodating die sizes up to H E X - 4 . I t p r o v i d e s t h e highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2PAK is suitable for high current applications because of its low internal connection re sistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 200 RDS(on) ()V GS = 10 V 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 Qgd (nC) 23 Configuration Single N-Channel MOSFET G D S K D2PAK (TO-263) SD G

ORDERING INFORMATION

Package D 2PAK (TO-263) D 2PAK (TO-263) D 2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3 a SiHF630STRR-GE3a Lead (Pb)-free IRF630SPbF IRF630STRLPbF a IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3 a SiHF630STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 V TC = 25 °C ID 9.0 ATC = 100 °C 5.7 Pulsed Drain Currenta IDM 36 Linear Derating Factor 0.59 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation T C = 25 °C PD W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.0 * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns

www.vishay.com Document Number: 91032 2 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12). c. I SD  9.0 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). Operating Junction and Storage Temperature Range T J, Tstg - 55 to + 150 Soldering Recommendations (Peak Temperature) for 10 s 300 d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mount) c RthJA -- 4 0 °C/WMaximum Junction-to-Ambient R thJA -- 6 2 Maximum Junction-to-Case (Drain) RthJC -- 1 . 7 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST COND ITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS VGS = 0, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA -0 . 2 4- V/°C Gate-Source Threshold Voltage V GS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage I GSS V GS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current I DSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance R DS(on) V GS = 10 V I D = 5.4 Ab - - 0.40  Forward Transconductance g fs VDS = 50 V, ID = 5.4 Ab 3.8 - - S Dynamic Input Capacitance C iss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 -8 0 0- pFOutput Capacitance C oss -2 4 0- Reverse Transfer Capacitance C rss -7 6- Total Gate Charge Q g VGS = 10 V ID = 5.9 A, VDS = 160 V see fig. 6 and 13b -- 4 3 nC Gate-Source Charge Q gs -- 7 . 0 Gate-Drain Charge Q gd -- 2 3 Turn-On Delay Time t d(on) VDD = 100 V, ID = 5.9 A see fig. 10b -9 . 4- ns Rise Time t r -2 8- Turn-Off Delay Time t d(off) -3 9- Fall Time t f -2 0- Internal Drain Inductance L D Between lead, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . 5- D S G

Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 or G-10 material). TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °C Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 9 . 0 A Pulsed Diode Forward Current a ISM -- 3 6 Body Diode Voltage V SD TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb -- 2 . 0 V Body Diode Reverse Recovery Time t rr TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/μsb - 170 340 ns Body Diode Reverse Recovery Charge Q rr -1 . 1 2 . 2 μ C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT S D G 91032_01 Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 100 101 101 100 10-1 10-1 101 100 10-1 100 101 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91032_02 4.5 V 10-1

www.vishay.com Document Number: 91032 4 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 20 µs Pulse Width VDS = 50 V 101 100 10-1 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 56 789 1 04 25 °C 150 °C 91032_03 ID = 5.9 A VGS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0

2.5 TJ, Junction Temperature (°C)

RDS(on), Drain-to-Source On Resistance (Normalized) 91032_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 1600 1200 800 400 0 101 Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91032_05 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 10 50403020 For test circuit see figure 13 91032_06 ID = 5.9 A VDS = 160 V VDS = 40 V VDS = 100 V

Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms 101 100 VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) 25 °C 150 °C VGS = 0 V 91032_07 1.5 10 µs 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 150 °C Single Pulse 103 102 0.1 0.1 25 102 25 103 25 104 91032_08 ID, Drain Current (A) TC, Case Temperature (°C) 25 150 1251007550 91032_09 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf

www.vishay.com Document Number: 91032 6 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t 1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91032_11 Rg IAS 0.01 Ωtp D.U.T. L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp 600 100 200 300 400 500 25 150 1251007550 Starting TJ, Junction Temperature (°C) EAS, Single Pulse Energy (mJ) Bottom Top ID 4.0 A 5.7 A 9.0 A VDD = 50 V 91032_12c

Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Fig. 14 - For N-Channel Vishay Siliconix maintains worldw ide manufacturing capability. Prod ucts may be manufactured at on e of several qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91032. QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. l SD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. V GS = 5 V for logic level devices VDD

Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1

Package Information

TO-263AB (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 1 3 D B B E H BA Detail A A A c A 2 x e 2 x b2 2 x b

0.010 A BMM

± 0.004 BM Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C Scale: none Lead tip (Datum A) C C B B View A - A E B H Seating plane Gauge plane 0° to 8° Detail “A” Rotated 90° CW scale 8:1 L3 A1L4L MILLIMETERS INCHES MILLIMETERS INCHES ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

www.vishay.com Vishay Revision: 02-Oct-12 1 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vish ay’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vi shay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.