90N02 UTC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
UNISONIC TECHNOLOGIES CO., LTD 90N02 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-751.a 90A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 90N02 is an N-channel enhancement mode power MOSFET using UTC’s advanced tech nology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC 90N02 is suitable for switching regulators, DC linear mode control, automotive systems, solenoid & motor control, etc. FEATURES * RDS(ON)= 7mΩ @ VGS=10V, ID=90A * High switching speed SYMBOL TO-251 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 90N02L-TM3-T 90N02G-TM3-T TO-251 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source
90N02 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 5 0 2 - 7 5 1 . a ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) V DSS 20 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous (TC<135°C, VGS=10V) I D 90 A Pulsed I DM 360 A Single Pulsed Avalanche Energy (Note 3) E AS 168 mJ Power Dissipation P D 54 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those valu es beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting T J=25~150°C 3. Starting T J=25°C , L = 0.42mH, IAS = 90A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to C a s e θJC 2.3 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 20 V Drain-Source Leakage Current I DSS V DS=20V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse V GS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 0.9 2.8 2.5 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=90A 5.1 7 m Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=20V, f=1.0MHz 3565 pF Output Capacitance C OSS 1310 pF Reverse Transfer Capacitance C RSS 395 pF SWITCHING PARAMETERS Total Gate Charge at 20V Q G VDD=20V, ID=90A, RL=0.4Ω 46 60 nC Gate to Source Charge Q GS 6.9 nC Gate to Drain Charge Q GD 9.8 nC Turn-ON Delay Time t D(ON) VDD=20V, ID=90A, RL=0.4Ω, VGS=10V, RGS=2.5 Ω 9 ns Rise Time t R 106 ns Turn-OFF Delay Time t D(OFF) 53 ns Fall-Time t F 41 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I SD=90A 0.9 1.25 V
90N02 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 5 0 2 - 7 5 1 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.