9034 FAIRCHILD | Alldatasheet
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Technical content
between cost and reliability.
- A Rating System: Single Pulse UIS SOA
Trench provide such rating chart, and a part of QFETTM datasheets will soon be updated. Figure 1. UIS Waveforms
similar to that of Figure 6. Figure 6. Transient Thermal Response, FQA11N90C
- TJM - TC = PDM * Zθ JC(t)
short time the Power MOSFET can handle even greater power pulse.
- In cases where the given time is too short and out of the graph range, the single pulse tran-
triangular and sine wave power pulses are shown in Figure 7. Figure 7. Conversion of Power Pulses
Rev. A, March 2004©2004 Fairchild Semiconductor Corporation Assume a situation where the drain-source voltage of a Power MOSFET applied to a switching power supply exceeds its maximum rating specified in the datasheet during delay time to pro- tection activation while conducting short circuit test. The specific conditions are as follows: FQA9N90C switching device, 100ns t AV, 9.2µs period, and 20ms delay time. In this case, the transient thermal resistance becomes If a 5kW power loss is assumed during avalanche , the resulting junction temperature rise will be This is an additional junction temperature ri se caused by avalanche . Therefore, the system designer should first calculate the junction te mperature of a normal operation, and then add the above value to obtain the transient junction temperature during avalanche. This tempera- ture should be kept below the maximum allowable junction temperature with some safety mar- gin according to the designer’s choice. 5. Conclusions The system designers are frequently forced to determine the applicability of a Power MOSFET to their application. This can be done by us ing the avalanche mode analysis and/or junction temperature analysis which are very practical. References [1] “Single Pulse Unclamped Inductive Switching: A Rating System”, Fairchild Application Note AN-7514 [2] “A Combined Single Pulse and Repetitive UIS Rating System”, Fairchild Application Note AN-7515 [3] Rudy Severns, 1984, “Safe Operating Area and Thermal Design for MOSPOWER Transistors”, MOSPOWER Applications Handbook, Siliconix ZΘJC t() 0.01 ZΘJC 20ms() 10 . 0 1–() ×+×= ZΘJC 9.3µs() ZΘJC 100ns() ZΘJC 9.2µs()–+ 0.00274=
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