9018 DGNJDZ | Alldatasheet
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Technical content
NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 30 V Collector Emitter Voltage V CEO 15 V Emitter Base Voltage V EBO 5 V Collector Current I C 50 mA Power Dissipation P tot 400 mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 1 mA Current Gain Group D E F G H I hFE hFE hFE hFE hFE hFE 132 108 146 198 Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 30 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 15 - - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 5 - - V Collector Cutoff Current at VCB = 12 V ICBO - - 50 nA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA VCE(sat) - - 0.5 V Collector Base Capacitance at VCB = 10 V, f = 1 MHz CCBO - 1.3 1.7 pF Gain Bandwidth Product at VCE = 5 V, IC = 5 mA fT 700 1100 - MHz
IC(m A),COLLECTOR CURRENT VCE(V),COLLECTOR-EMITTER VOLTAGE 0.5 3 5 10 30 1000 h FE, DC CURRENT GAIN IC(mA),COLLECTOR CURRENT DC CURRENT GAIN fT(M Hz), CURRENT GAIN-BANDW IDTH PRODUCT 0.1 0.5 1 10 100 500 2000 CURRENT GAIN-BANDWIDTH PRODUCT 0.1 0.5 1 5 10 30 0.1 V BE(sat),V CE(sat),(m V) SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE 100 300 500 0.01 0.3 78 9 10 0.03 0.05 0.3 0.5 IC(mA),COLLECTOR CURRENTIC(mA),COLLECTOR CURRENT 1000 300 0.3 3 5 30 Cob(pF),CAPACITANCE VCB(V),COLLECTOR-BASE VOLTAGE 3 10 1.2 1.6 10 5030 100 OUTPUT CAPACITANCE 2.4 2.0 0.4 0.8 IB=80 A IB=70 A IB=60 A IB=50 A IB=40 A IB=30 A IB=20 A IB=10 A IB=90 A VCE=5V VCE=5V IC=10IB VBE(sat) f=1MHz IE=0 VCE(sat) 9018